A surface potential based model for GaN HEMTs

Shantanu Agnihotri, Sudip Ghosh, Avirup Dasgupta, Yogesh Singh Chauhan, Sourabh Khandelwal

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

3 Citations (Scopus)

Abstract

In this work a surface potential based compact model is presented for GaN material based High Electron Mobility Transistors. We have developed model for charges, drain current and gd (output conductance) which is surface potential based and physically accurate. Our model has shown excellent agreement with experimental data for drain current and gd. This model is capable of showing correct physical behavior and is robust which can be observed through various benchmark tests, such as AC symmetry test, DC symmetry test and self-heating test. We have used Agilent ICCAP, ADS and Synopsys Hspice for our simulations.

Original languageEnglish
Title of host publicationProceedings
Subtitle of host publication2013 IEEE Asia Pacific conference on postgraduate research in microelectronics and electronics, PrimeAsia 2013
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages175-179
Number of pages5
ISBN (Electronic)9781479927517
ISBN (Print)9781479927500
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event2013 5th IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics, PrimeAsia 2013 - Visakhapatnam, Indonesia
Duration: 19 Dec 201321 Dec 2013

Other

Other2013 5th IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics, PrimeAsia 2013
CountryIndonesia
CityVisakhapatnam
Period19/12/1321/12/13

Keywords

  • Benchmark Tests
  • Compact Model
  • GaN HEMT
  • Surface Potential

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