A surface potential based model for GaN HEMTs

Shantanu Agnihotri; Sudip Ghosh; Avirup Dasgupta; Yogesh Singh Chauhan; Sourabh Khandelwal

doi:10.1109/PrimeAsia.2013.6731200

A surface potential based model for GaN HEMTs

Shantanu Agnihotri, Sudip Ghosh, Avirup Dasgupta, Yogesh Singh Chauhan, Sourabh Khandelwal

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

6 Citations (Scopus)

Abstract

In this work a surface potential based compact model is presented for GaN material based High Electron Mobility Transistors. We have developed model for charges, drain current and g_d (output conductance) which is surface potential based and physically accurate. Our model has shown excellent agreement with experimental data for drain current and gd. This model is capable of showing correct physical behavior and is robust which can be observed through various benchmark tests, such as AC symmetry test, DC symmetry test and self-heating test. We have used Agilent ICCAP, ADS and Synopsys Hspice for our simulations.

Original language	English
Title of host publication	Proceedings
Subtitle of host publication	2013 IEEE Asia Pacific conference on postgraduate research in microelectronics and electronics, PrimeAsia 2013
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	175-179
Number of pages	5
ISBN (Electronic)	9781479927517
ISBN (Print)	9781479927500
DOIs	https://doi.org/10.1109/PrimeAsia.2013.6731200
Publication status	Published - 2013
Externally published	Yes
Event	2013 5th IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics, PrimeAsia 2013 - Visakhapatnam, Indonesia Duration: 19 Dec 2013 → 21 Dec 2013

Other

Other	2013 5th IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics, PrimeAsia 2013
Country/Territory	Indonesia
City	Visakhapatnam
Period	19/12/13 → 21/12/13

Keywords

Benchmark Tests
Compact Model
GaN HEMT
Surface Potential

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10.1109/PrimeAsia.2013.6731200

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Agnihotri, S., Ghosh, S., Dasgupta, A., Chauhan, Y. S., & Khandelwal, S. (2013). A surface potential based model for GaN HEMTs. In Proceedings: 2013 IEEE Asia Pacific conference on postgraduate research in microelectronics and electronics, PrimeAsia 2013 (pp. 175-179). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/PrimeAsia.2013.6731200

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title = "A surface potential based model for GaN HEMTs",

abstract = "In this work a surface potential based compact model is presented for GaN material based High Electron Mobility Transistors. We have developed model for charges, drain current and gd (output conductance) which is surface potential based and physically accurate. Our model has shown excellent agreement with experimental data for drain current and gd. This model is capable of showing correct physical behavior and is robust which can be observed through various benchmark tests, such as AC symmetry test, DC symmetry test and self-heating test. We have used Agilent ICCAP, ADS and Synopsys Hspice for our simulations.",

keywords = "Benchmark Tests, Compact Model, GaN HEMT, Surface Potential",

author = "Shantanu Agnihotri and Sudip Ghosh and Avirup Dasgupta and Chauhan, {Yogesh Singh} and Sourabh Khandelwal",

year = "2013",

doi = "10.1109/PrimeAsia.2013.6731200",

language = "English",

isbn = "9781479927500",

pages = "175--179",

booktitle = "Proceedings",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2013 5th IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics, PrimeAsia 2013 ; Conference date: 19-12-2013 Through 21-12-2013",

}

Agnihotri, S, Ghosh, S, Dasgupta, A, Chauhan, YS & Khandelwal, S 2013, A surface potential based model for GaN HEMTs. in Proceedings: 2013 IEEE Asia Pacific conference on postgraduate research in microelectronics and electronics, PrimeAsia 2013. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 175-179, 2013 5th IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics, PrimeAsia 2013, Visakhapatnam, Indonesia, 19/12/13. https://doi.org/10.1109/PrimeAsia.2013.6731200

A surface potential based model for GaN HEMTs. / Agnihotri, Shantanu; Ghosh, Sudip; Dasgupta, Avirup et al.
Proceedings: 2013 IEEE Asia Pacific conference on postgraduate research in microelectronics and electronics, PrimeAsia 2013. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2013. p. 175-179.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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AU - Khandelwal, Sourabh

PY - 2013

Y1 - 2013

N2 - In this work a surface potential based compact model is presented for GaN material based High Electron Mobility Transistors. We have developed model for charges, drain current and gd (output conductance) which is surface potential based and physically accurate. Our model has shown excellent agreement with experimental data for drain current and gd. This model is capable of showing correct physical behavior and is robust which can be observed through various benchmark tests, such as AC symmetry test, DC symmetry test and self-heating test. We have used Agilent ICCAP, ADS and Synopsys Hspice for our simulations.

AB - In this work a surface potential based compact model is presented for GaN material based High Electron Mobility Transistors. We have developed model for charges, drain current and gd (output conductance) which is surface potential based and physically accurate. Our model has shown excellent agreement with experimental data for drain current and gd. This model is capable of showing correct physical behavior and is robust which can be observed through various benchmark tests, such as AC symmetry test, DC symmetry test and self-heating test. We have used Agilent ICCAP, ADS and Synopsys Hspice for our simulations.

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KW - Surface Potential

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BT - Proceedings

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ER -

A surface potential based model for GaN HEMTs

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