A systematic evaluation of thermal performance of interface materials in high power amplifiers

L. Maguire; M. Behnia; G. Morrison

doi:10.1109/EPTC.2003.1298780

A systematic evaluation of thermal performance of interface materials in high power amplifiers

L. Maguire, M. Behnia, G. Morrison

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

2 Citations (Scopus)

Abstract

A comprehensive study has been undertaken to better understand the thermal conditions within high power, radio frequency (r.f.) signal amplifiers. Here, the results of investigation of the interface thermal resistance between the primary heat dissipating transistors and the heat sink are presented. With individual devices dissipating up to 130 W each, junction temperatures have been shown to approach 200°C when ambient temperatures reach 60°C. Under these conditions, the interface thermal resistance currently accounts for 20% of the total drop from junction to ambient temperature. Experiments were conducted to determine the interface thermal resistance of a number of candidate materials, allowing comparison of application specific data obtained here with the manufacturer published data. The data was also used to compare the performance of the current thermal grease compound with several commercially available alternatives. At maximum power dissipation, transistor temperatures were reduced by up to 20°C through the use of a high conductivity thermal grease in conjunction with careful preparation of the contact surfaces to ensure consistent flatness.

Original language	English
Title of host publication	ICEPT 2003 - 5th International Conference on Electronic Packaging Technology, Proceedings
Editors	Keyun Bi, Peter G. Barnwell, Jiaji Wang
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	455-459
Number of pages	5
ISBN (Electronic)	0780381696
ISBN (Print)	0780381688
DOIs	https://doi.org/10.1109/EPTC.2003.1298780
Publication status	Published - Oct 2003
Externally published	Yes
Event	5th International Conference on Electronic Packaging Technology, ICEPT - 2003 - Shanghai, China Duration: 28 Oct 2003 → 30 Oct 2003

Other

Other	5th International Conference on Electronic Packaging Technology, ICEPT - 2003
Country/Territory	China
City	Shanghai
Period	28/10/03 → 30/10/03

Keywords

Conducting materials
Heat sinks
High power amplifiers
Radio frequency
Radiofrequency amplifiers
Resistance heating
RF signals
Temperature
Thermal conductivity
Thermal resistance

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10.1109/EPTC.2003.1298780

Cite this

Maguire, L., Behnia, M., & Morrison, G. (2003). A systematic evaluation of thermal performance of interface materials in high power amplifiers. In K. Bi, P. G. Barnwell, & J. Wang (Eds.), ICEPT 2003 - 5th International Conference on Electronic Packaging Technology, Proceedings (pp. 455-459). Article 1298780 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/EPTC.2003.1298780

Maguire, L. ; Behnia, M. ; Morrison, G. / A systematic evaluation of thermal performance of interface materials in high power amplifiers. ICEPT 2003 - 5th International Conference on Electronic Packaging Technology, Proceedings. editor / Keyun Bi ; Peter G. Barnwell ; Jiaji Wang. Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2003. pp. 455-459

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abstract = "A comprehensive study has been undertaken to better understand the thermal conditions within high power, radio frequency (r.f.) signal amplifiers. Here, the results of investigation of the interface thermal resistance between the primary heat dissipating transistors and the heat sink are presented. With individual devices dissipating up to 130 W each, junction temperatures have been shown to approach 200°C when ambient temperatures reach 60°C. Under these conditions, the interface thermal resistance currently accounts for 20% of the total drop from junction to ambient temperature. Experiments were conducted to determine the interface thermal resistance of a number of candidate materials, allowing comparison of application specific data obtained here with the manufacturer published data. The data was also used to compare the performance of the current thermal grease compound with several commercially available alternatives. At maximum power dissipation, transistor temperatures were reduced by up to 20°C through the use of a high conductivity thermal grease in conjunction with careful preparation of the contact surfaces to ensure consistent flatness.",

keywords = "Conducting materials, Heat sinks, High power amplifiers, Radio frequency, Radiofrequency amplifiers, Resistance heating, RF signals, Temperature, Thermal conductivity, Thermal resistance",

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Maguire, L, Behnia, M & Morrison, G 2003, A systematic evaluation of thermal performance of interface materials in high power amplifiers. in K Bi, PG Barnwell & J Wang (eds), ICEPT 2003 - 5th International Conference on Electronic Packaging Technology, Proceedings., 1298780, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 455-459, 5th International Conference on Electronic Packaging Technology, ICEPT - 2003, Shanghai, China, 28/10/03. https://doi.org/10.1109/EPTC.2003.1298780

A systematic evaluation of thermal performance of interface materials in high power amplifiers. / Maguire, L.; Behnia, M.; Morrison, G.
ICEPT 2003 - 5th International Conference on Electronic Packaging Technology, Proceedings. ed. / Keyun Bi; Peter G. Barnwell; Jiaji Wang. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2003. p. 455-459 1298780.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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Maguire L, Behnia M, Morrison G. A systematic evaluation of thermal performance of interface materials in high power amplifiers. In Bi K, Barnwell PG, Wang J, editors, ICEPT 2003 - 5th International Conference on Electronic Packaging Technology, Proceedings. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2003. p. 455-459. 1298780 doi: 10.1109/EPTC.2003.1298780

A systematic evaluation of thermal performance of interface materials in high power amplifiers

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