A systematic evaluation of thermal performance of interface materials in high power amplifiers

L. Maguire, M. Behnia, G. Morrison

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

Abstract

A comprehensive study has been undertaken to better understand the thermal conditions within high power, radio frequency (r.f.) signal amplifiers. Here, the results of investigation of the interface thermal resistance between the primary heat dissipating transistors and the heat sink are presented. With individual devices dissipating up to 130 W each, junction temperatures have been shown to approach 200°C when ambient temperatures reach 60°C. Under these conditions, the interface thermal resistance currently accounts for 20% of the total drop from junction to ambient temperature. Experiments were conducted to determine the interface thermal resistance of a number of candidate materials, allowing comparison of application specific data obtained here with the manufacturer published data. The data was also used to compare the performance of the current thermal grease compound with several commercially available alternatives. At maximum power dissipation, transistor temperatures were reduced by up to 20°C through the use of a high conductivity thermal grease in conjunction with careful preparation of the contact surfaces to ensure consistent flatness.

Original languageEnglish
Title of host publicationICEPT 2003 - 5th International Conference on Electronic Packaging Technology, Proceedings
EditorsKeyun Bi, Peter G. Barnwell, Jiaji Wang
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages455-459
Number of pages5
ISBN (Electronic)0780381696
ISBN (Print)0780381688
DOIs
Publication statusPublished - Oct 2003
Externally publishedYes
Event5th International Conference on Electronic Packaging Technology, ICEPT - 2003 - Shanghai, China
Duration: 28 Oct 200330 Oct 2003

Other

Other5th International Conference on Electronic Packaging Technology, ICEPT - 2003
CountryChina
CityShanghai
Period28/10/0330/10/03

Keywords

  • Conducting materials
  • Heat sinks
  • High power amplifiers
  • Radio frequency
  • Radiofrequency amplifiers
  • Resistance heating
  • RF signals
  • Temperature
  • Thermal conductivity
  • Thermal resistance

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