A technique for modelling S-parameters for HEMT structures as a function of gate bias

Simon J. Mahon, David J. Skellern, Frederick Green

    Research output: Contribution to journalArticlepeer-review

    18 Citations (Scopus)

    Abstract

    A physically based technique for modelling HEMT structure S-parameters is presented. The core of the model is directly dependent on the HEMT wafer structure and the physical gate length. The model accurately predicts the device's S-parameters as a function of the applied gate bias. The physical basis facilitates the modelling of different types of HEMT structures. In this paper we present measured S-parameters and simulation results, over a frequency range of 1 to 25 GHz, for three different HEMT structures: uniformly-doped, GaAs-channel; pulse-doped, GaAs-channel; and uniformly-doped, strained-InGaAs-channel.

    Original languageEnglish
    Pages (from-to)1430-1440
    Number of pages11
    JournalIEEE Transactions on Microwave Theory and Techniques
    Volume40
    Issue number7
    DOIs
    Publication statusPublished - Jul 1992

    Keywords

    • ELECTRON-MOBILITY TRANSISTORS
    • MICROWAVE CHARACTERISTICS
    • COMPUTER CALCULATION
    • CIRCUIT SIMULATION
    • CHARGE CONTROL
    • MESFET MODEL
    • MONTE-CARLO
    • DC MODEL
    • MODFETS
    • FET

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