A technique for modelling S-parameters for HEMT structures as a function of gate bias

Simon J. Mahon, David J. Skellern, Frederick Green

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16 Citations (Scopus)

Abstract

A physically based technique for modelling HEMT structure S-parameters is presented. The core of the model is directly dependent on the HEMT wafer structure and the physical gate length. The model accurately predicts the device's S-parameters as a function of the applied gate bias. The physical basis facilitates the modelling of different types of HEMT structures. In this paper we present measured S-parameters and simulation results, over a frequency range of 1 to 25 GHz, for three different HEMT structures: uniformly-doped, GaAs-channel; pulse-doped, GaAs-channel; and uniformly-doped, strained-InGaAs-channel.

Original languageEnglish
Pages (from-to)1430-1440
Number of pages11
JournalIEEE Transactions on Microwave Theory and Techniques
Volume40
Issue number7
DOIs
Publication statusPublished - Jul 1992

Keywords

  • ELECTRON-MOBILITY TRANSISTORS
  • MICROWAVE CHARACTERISTICS
  • COMPUTER CALCULATION
  • CIRCUIT SIMULATION
  • CHARGE CONTROL
  • MESFET MODEL
  • MONTE-CARLO
  • DC MODEL
  • MODFETS
  • FET

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