A technique for modelling S-parameters for HEMT structures as a function of gate bias

Simon J. Mahon; David J. Skellern; Frederick Green

doi:10.1109/22.146324

A technique for modelling S-parameters for HEMT structures as a function of gate bias

Simon J. Mahon, David J. Skellern, Frederick Green

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

A physically based technique for modelling HEMT structure S-parameters is presented. The core of the model is directly dependent on the HEMT wafer structure and the physical gate length. The model accurately predicts the device's S-parameters as a function of the applied gate bias. The physical basis facilitates the modelling of different types of HEMT structures. In this paper we present measured S-parameters and simulation results, over a frequency range of 1 to 25 GHz, for three different HEMT structures: uniformly-doped, GaAs-channel; pulse-doped, GaAs-channel; and uniformly-doped, strained-InGaAs-channel.

Original language	English
Pages (from-to)	1430-1440
Number of pages	11
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	40
Issue number	7
DOIs	https://doi.org/10.1109/22.146324
Publication status	Published - Jul 1992

Keywords

ELECTRON-MOBILITY TRANSISTORS
MICROWAVE CHARACTERISTICS
COMPUTER CALCULATION
CIRCUIT SIMULATION
CHARGE CONTROL
MESFET MODEL
MONTE-CARLO
DC MODEL
MODFETS
FET

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title = "A technique for modelling S-parameters for HEMT structures as a function of gate bias",

abstract = "A physically based technique for modelling HEMT structure S-parameters is presented. The core of the model is directly dependent on the HEMT wafer structure and the physical gate length. The model accurately predicts the device's S-parameters as a function of the applied gate bias. The physical basis facilitates the modelling of different types of HEMT structures. In this paper we present measured S-parameters and simulation results, over a frequency range of 1 to 25 GHz, for three different HEMT structures: uniformly-doped, GaAs-channel; pulse-doped, GaAs-channel; and uniformly-doped, strained-InGaAs-channel.",

keywords = "ELECTRON-MOBILITY TRANSISTORS, MICROWAVE CHARACTERISTICS, COMPUTER CALCULATION, CIRCUIT SIMULATION, CHARGE CONTROL, MESFET MODEL, MONTE-CARLO, DC MODEL, MODFETS, FET",

author = "Mahon, {Simon J.} and Skellern, {David J.} and Frederick Green",

year = "1992",

month = jul,

doi = "10.1109/22.146324",

language = "English",

volume = "40",

pages = "1430--1440",

journal = "IEEE Transactions on Microwave Theory and Techniques",

issn = "0018-9480",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

number = "7",

}

TY - JOUR

T1 - A technique for modelling S-parameters for HEMT structures as a function of gate bias

AU - Mahon, Simon J.

AU - Skellern, David J.

AU - Green, Frederick

PY - 1992/7

Y1 - 1992/7

N2 - A physically based technique for modelling HEMT structure S-parameters is presented. The core of the model is directly dependent on the HEMT wafer structure and the physical gate length. The model accurately predicts the device's S-parameters as a function of the applied gate bias. The physical basis facilitates the modelling of different types of HEMT structures. In this paper we present measured S-parameters and simulation results, over a frequency range of 1 to 25 GHz, for three different HEMT structures: uniformly-doped, GaAs-channel; pulse-doped, GaAs-channel; and uniformly-doped, strained-InGaAs-channel.

AB - A physically based technique for modelling HEMT structure S-parameters is presented. The core of the model is directly dependent on the HEMT wafer structure and the physical gate length. The model accurately predicts the device's S-parameters as a function of the applied gate bias. The physical basis facilitates the modelling of different types of HEMT structures. In this paper we present measured S-parameters and simulation results, over a frequency range of 1 to 25 GHz, for three different HEMT structures: uniformly-doped, GaAs-channel; pulse-doped, GaAs-channel; and uniformly-doped, strained-InGaAs-channel.

KW - ELECTRON-MOBILITY TRANSISTORS

KW - MICROWAVE CHARACTERISTICS

KW - COMPUTER CALCULATION

KW - CIRCUIT SIMULATION

KW - CHARGE CONTROL

KW - MESFET MODEL

KW - MONTE-CARLO

KW - DC MODEL

KW - MODFETS

KW - FET

U2 - 10.1109/22.146324

DO - 10.1109/22.146324

M3 - Article

VL - 40

SP - 1430

EP - 1440

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

SN - 0018-9480

IS - 7

ER -

A technique for modelling S-parameters for HEMT structures as a function of gate bias

Abstract

Keywords

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