A tunable input-impedance matching approach for long-term degradation effects of power amplifier

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

Abstract

This paper presents a simple approach in the design of a CMOS-based power amplifier (PA) which mitigates the implications of the aging of the transistors involved in the circuit. Using 45nm-RFSOI PDK we first design and simulate a PA. Next, we use the Relxpert simulation tool to simulate the long-term degradation behavior of this PA. We investigate the device-level causes of long-term degradation, accounting for both DC and RF stress. Based on our investigations, we propose an approach which relies on tuning of the input-impedance matching network, using two varactors in this network to mitigate the effect of transistors aging on the PA's performance.

Original languageEnglish
Title of host publication2018 IEEE International RF and Microwave Conference
Subtitle of host publicationproceedings
EditorsIdnin Pasya, Aziati Husna Awang, Fauziahanim Che Seman
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages151-154
Number of pages4
ISBN (Electronic)9781538667200, 9781538667194
ISBN (Print)9781538667217
DOIs
Publication statusPublished - 2018
Event2018 IEEE International RF and Microwave Conference, RFM 2018 - Penang, Malaysia
Duration: 17 Dec 201819 Dec 2018

Conference

Conference2018 IEEE International RF and Microwave Conference, RFM 2018
CountryMalaysia
CityPenang
Period17/12/1819/12/18

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