A tunable input-impedance matching approach for long-term degradation effects of power amplifier

Hossein Eslahi; Sayed Ali Albahrani; Dhawal Mahajan; Sourabh Khandelwal

doi:10.1109/RFM.2018.8846551

A tunable input-impedance matching approach for long-term degradation effects of power amplifier

Hossein Eslahi, Sayed Ali Albahrani, Dhawal Mahajan, Sourabh Khandelwal

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

1 Citation (Scopus)

Abstract

This paper presents a simple approach in the design of a CMOS-based power amplifier (PA) which mitigates the implications of the aging of the transistors involved in the circuit. Using 45nm-RFSOI PDK we first design and simulate a PA. Next, we use the Relxpert simulation tool to simulate the long-term degradation behavior of this PA. We investigate the device-level causes of long-term degradation, accounting for both DC and RF stress. Based on our investigations, we propose an approach which relies on tuning of the input-impedance matching network, using two varactors in this network to mitigate the effect of transistors aging on the PA's performance.

Original language	English
Title of host publication	2018 IEEE International RF and Microwave Conference
Subtitle of host publication	proceedings
Editors	Idnin Pasya, Aziati Husna Awang, Fauziahanim Che Seman
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	151-154
Number of pages	4
ISBN (Electronic)	9781538667200, 9781538667194
ISBN (Print)	9781538667217
DOIs	https://doi.org/10.1109/RFM.2018.8846551
Publication status	Published - 2018
Event	2018 IEEE International RF and Microwave Conference, RFM 2018 - Penang, Malaysia Duration: 17 Dec 2018 → 19 Dec 2018

Conference

Conference	2018 IEEE International RF and Microwave Conference, RFM 2018
Country/Territory	Malaysia
City	Penang
Period	17/12/18 → 19/12/18

Access to Document

10.1109/RFM.2018.8846551

Cite this

Eslahi, H., Albahrani, S. A., Mahajan, D., & Khandelwal, S. (2018). A tunable input-impedance matching approach for long-term degradation effects of power amplifier. In I. Pasya, A. H. Awang, & F. C. Seman (Eds.), 2018 IEEE International RF and Microwave Conference: proceedings (pp. 151-154). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/RFM.2018.8846551

Eslahi, Hossein ; Albahrani, Sayed Ali ; Mahajan, Dhawal et al. / A tunable input-impedance matching approach for long-term degradation effects of power amplifier. 2018 IEEE International RF and Microwave Conference: proceedings. editor / Idnin Pasya ; Aziati Husna Awang ; Fauziahanim Che Seman. Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2018. pp. 151-154

@inproceedings{7e5615d48768437fa95514eaff488659,

title = "A tunable input-impedance matching approach for long-term degradation effects of power amplifier",

abstract = "This paper presents a simple approach in the design of a CMOS-based power amplifier (PA) which mitigates the implications of the aging of the transistors involved in the circuit. Using 45nm-RFSOI PDK we first design and simulate a PA. Next, we use the Relxpert simulation tool to simulate the long-term degradation behavior of this PA. We investigate the device-level causes of long-term degradation, accounting for both DC and RF stress. Based on our investigations, we propose an approach which relies on tuning of the input-impedance matching network, using two varactors in this network to mitigate the effect of transistors aging on the PA's performance.",

author = "Hossein Eslahi and Albahrani, \{Sayed Ali\} and Dhawal Mahajan and Sourabh Khandelwal",

year = "2018",

doi = "10.1109/RFM.2018.8846551",

language = "English",

isbn = "9781538667217",

pages = "151--154",

editor = "Idnin Pasya and Awang, \{Aziati Husna\} and Seman, \{Fauziahanim Che\}",

booktitle = "2018 IEEE International RF and Microwave Conference",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2018 IEEE International RF and Microwave Conference, RFM 2018 ; Conference date: 17-12-2018 Through 19-12-2018",

}

Eslahi, H, Albahrani, SA, Mahajan, D & Khandelwal, S 2018, A tunable input-impedance matching approach for long-term degradation effects of power amplifier. in I Pasya, AH Awang & FC Seman (eds), 2018 IEEE International RF and Microwave Conference: proceedings. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 151-154, 2018 IEEE International RF and Microwave Conference, RFM 2018, Penang, Malaysia, 17/12/18. https://doi.org/10.1109/RFM.2018.8846551

A tunable input-impedance matching approach for long-term degradation effects of power amplifier. / Eslahi, Hossein; Albahrani, Sayed Ali; Mahajan, Dhawal et al.
2018 IEEE International RF and Microwave Conference: proceedings. ed. / Idnin Pasya; Aziati Husna Awang; Fauziahanim Che Seman. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2018. p. 151-154.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - A tunable input-impedance matching approach for long-term degradation effects of power amplifier

AU - Eslahi, Hossein

AU - Albahrani, Sayed Ali

AU - Mahajan, Dhawal

AU - Khandelwal, Sourabh

PY - 2018

Y1 - 2018

N2 - This paper presents a simple approach in the design of a CMOS-based power amplifier (PA) which mitigates the implications of the aging of the transistors involved in the circuit. Using 45nm-RFSOI PDK we first design and simulate a PA. Next, we use the Relxpert simulation tool to simulate the long-term degradation behavior of this PA. We investigate the device-level causes of long-term degradation, accounting for both DC and RF stress. Based on our investigations, we propose an approach which relies on tuning of the input-impedance matching network, using two varactors in this network to mitigate the effect of transistors aging on the PA's performance.

AB - This paper presents a simple approach in the design of a CMOS-based power amplifier (PA) which mitigates the implications of the aging of the transistors involved in the circuit. Using 45nm-RFSOI PDK we first design and simulate a PA. Next, we use the Relxpert simulation tool to simulate the long-term degradation behavior of this PA. We investigate the device-level causes of long-term degradation, accounting for both DC and RF stress. Based on our investigations, we propose an approach which relies on tuning of the input-impedance matching network, using two varactors in this network to mitigate the effect of transistors aging on the PA's performance.

UR - https://www.scopus.com/pages/publications/85073245613

U2 - 10.1109/RFM.2018.8846551

DO - 10.1109/RFM.2018.8846551

M3 - Conference proceeding contribution

AN - SCOPUS:85073245613

SN - 9781538667217

SP - 151

EP - 154

BT - 2018 IEEE International RF and Microwave Conference

A2 - Pasya, Idnin

A2 - Awang, Aziati Husna

A2 - Seman, Fauziahanim Che

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 2018 IEEE International RF and Microwave Conference, RFM 2018

Y2 - 17 December 2018 through 19 December 2018

ER -

Eslahi H, Albahrani SA, Mahajan D, Khandelwal S. A tunable input-impedance matching approach for long-term degradation effects of power amplifier. In Pasya I, Awang AH, Seman FC, editors, 2018 IEEE International RF and Microwave Conference: proceedings. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2018. p. 151-154 doi: 10.1109/RFM.2018.8846551

A tunable input-impedance matching approach for long-term degradation effects of power amplifier

Abstract

Conference

Access to Document

Other files and links

Fingerprint

Cite this