A ultra-thin silicon nitride barrier layer implementation for silicon quantum dots in amorphous silicon carbide matrix in photovoltaic application

Zhenyu Wan; Shujuan Huang; Martin Green; Gavin Conibeer

doi:10.1016/j.egypro.2011.10.190

A ultra-thin silicon nitride barrier layer implementation for silicon quantum dots in amorphous silicon carbide matrix in photovoltaic application

Zhenyu Wan^*, Shujuan Huang, Martin Green, Gavin Conibeer

^*Corresponding author for this work

Research output: Contribution to journal › Conference paper › peer-review

1 Citation (Scopus)

17 Downloads (Pure)

Abstract

To search a suitable material candidate for "all-Si" tandem solar cell, a hybrid super-lattice structure consisting 30 periods of alternating amorphous Si_0.7 C_0.3 (5nm) layers and ultra-thin Si₃N₄ barrier layers (0.2-2.0nm) has been deposited by magnetron sputtering with subsequent annealing by a rapid thermal annealing (RTA) process. Structural and electrical characterization of the layered film was carried out after annealing. 8nm barrier layer thickness is proven to be able to provide sufficient structural confinement even after high temperature annealing. Increased resistivity was measured for the overall multi-layer structure, resulting from the incorporation of the Si₃N₄ barrier layers hence likely suppressing carrier transport and further electron hopping is proven the main transportation mechanism.

Original language	English
Pages (from-to)	271-281
Number of pages	11
Journal	Energy Procedia
Volume	10
DOIs	https://doi.org/10.1016/j.egypro.2011.10.190
Publication status	Published - 2011
Externally published	Yes
Event	Advanced Inorganic Materials and Concepts for Photovoltaics - Symposium R at the E-MRS 2011 Spring Meeting - Nice, France Duration: 9 May 2011 → 13 May 2011

Bibliographical note

Copyright the Publisher 2011. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.

Keywords

Si nanocrystal
SiC matrix
hybrid structure
superlattice structure

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10.1016/j.egypro.2011.10.190Licence: CC BY-NC-ND

Publisher version (open access)Final published version, 795 KBLicence: CC BY-NC-ND

Cite this

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title = "A ultra-thin silicon nitride barrier layer implementation for silicon quantum dots in amorphous silicon carbide matrix in photovoltaic application",

abstract = " To search a suitable material candidate for {"}all-Si{"} tandem solar cell, a hybrid super-lattice structure consisting 30 periods of alternating amorphous Si0.7 C0.3 (5nm) layers and ultra-thin Si3N4 barrier layers (0.2-2.0nm) has been deposited by magnetron sputtering with subsequent annealing by a rapid thermal annealing (RTA) process. Structural and electrical characterization of the layered film was carried out after annealing. 8nm barrier layer thickness is proven to be able to provide sufficient structural confinement even after high temperature annealing. Increased resistivity was measured for the overall multi-layer structure, resulting from the incorporation of the Si3N4 barrier layers hence likely suppressing carrier transport and further electron hopping is proven the main transportation mechanism.",

keywords = "Si nanocrystal, SiC matrix, hybrid structure, superlattice structure",

author = "Zhenyu Wan and Shujuan Huang and Martin Green and Gavin Conibeer",

note = "Copyright the Publisher 2011. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.; Advanced Inorganic Materials and Concepts for Photovoltaics - Symposium R at the E-MRS 2011 Spring Meeting ; Conference date: 09-05-2011 Through 13-05-2011",

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doi = "10.1016/j.egypro.2011.10.190",

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T1 - A ultra-thin silicon nitride barrier layer implementation for silicon quantum dots in amorphous silicon carbide matrix in photovoltaic application

AU - Wan, Zhenyu

AU - Huang, Shujuan

AU - Green, Martin

AU - Conibeer, Gavin

N1 - Copyright the Publisher 2011. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.

PY - 2011

Y1 - 2011

N2 - To search a suitable material candidate for "all-Si" tandem solar cell, a hybrid super-lattice structure consisting 30 periods of alternating amorphous Si0.7 C0.3 (5nm) layers and ultra-thin Si3N4 barrier layers (0.2-2.0nm) has been deposited by magnetron sputtering with subsequent annealing by a rapid thermal annealing (RTA) process. Structural and electrical characterization of the layered film was carried out after annealing. 8nm barrier layer thickness is proven to be able to provide sufficient structural confinement even after high temperature annealing. Increased resistivity was measured for the overall multi-layer structure, resulting from the incorporation of the Si3N4 barrier layers hence likely suppressing carrier transport and further electron hopping is proven the main transportation mechanism.

AB - To search a suitable material candidate for "all-Si" tandem solar cell, a hybrid super-lattice structure consisting 30 periods of alternating amorphous Si0.7 C0.3 (5nm) layers and ultra-thin Si3N4 barrier layers (0.2-2.0nm) has been deposited by magnetron sputtering with subsequent annealing by a rapid thermal annealing (RTA) process. Structural and electrical characterization of the layered film was carried out after annealing. 8nm barrier layer thickness is proven to be able to provide sufficient structural confinement even after high temperature annealing. Increased resistivity was measured for the overall multi-layer structure, resulting from the incorporation of the Si3N4 barrier layers hence likely suppressing carrier transport and further electron hopping is proven the main transportation mechanism.

KW - Si nanocrystal

KW - SiC matrix

KW - hybrid structure

KW - superlattice structure

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U2 - 10.1016/j.egypro.2011.10.190

DO - 10.1016/j.egypro.2011.10.190

M3 - Conference paper

AN - SCOPUS:84862961747

SN - 1876-6102

VL - 10

SP - 271

EP - 281

JO - Energy Procedia

JF - Energy Procedia

T2 - Advanced Inorganic Materials and Concepts for Photovoltaics - Symposium R at the E-MRS 2011 Spring Meeting

Y2 - 9 May 2011 through 13 May 2011

ER -

A ultra-thin silicon nitride barrier layer implementation for silicon quantum dots in amorphous silicon carbide matrix in photovoltaic application

Abstract

Bibliographical note

Keywords

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