A W-band driver amplifier in 0.1 μm pHEMT Gallium Arsenide process

Van Dung Tran; Sudipta Chakraborty; Jakov Mihaljevic; Simon Mahon; Michael Heimlich

doi:10.1109/APMC52720.2021.9661675

A W-band driver amplifier in 0.1 μm pHEMT Gallium Arsenide process

Van Dung Tran, Sudipta Chakraborty, Jakov Mihaljevic, Simon Mahon, Michael Heimlich

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

4 Citations (Scopus)

Abstract

This paper presents a four-stage driver amplifier with a high gain, broad band and reasonably high power across a frequency range of 85 to 104 GHz implemented in WIN Semiconductor's 0.1 μm Gallium Arsenide (GaAs) technology. The amplifier design is based on a synthesized transistor model extrapolated from a single measured device characterized at much lower frequencies. It achieves a measured average gain of 18 dB over 19 GHz bandwidth from 85 to 104 GHz. The measured maximum saturated output power is 20 dBm from 92.5 GHz to 100 GHz and the peak PAE of 12.5% at 97 GHz. The amplifier operates at 4 V and has a power consumption of 640 mW. This driver amplifier can be used as a unit cell for a power amplifier. The core area of the amplifier is 0.85 mm2.

Original language	English
Title of host publication	2021 IEEE Asia-Pacific Microwave Conference (APMC)
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	46-48
Number of pages	3
ISBN (Electronic)	9781665437820
ISBN (Print)	9781665437837
DOIs	https://doi.org/10.1109/APMC52720.2021.9661675
Publication status	Published - 2021
Event	2021 IEEE Asia-Pacific Microwave Conference, APMC 2021 - Virtual, Australia Duration: 28 Nov 2021 → 1 Dec 2021

Conference

Conference	2021 IEEE Asia-Pacific Microwave Conference, APMC 2021
Country/Territory	Australia
City	Virtual
Period	28/11/21 → 1/12/21

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10.1109/APMC52720.2021.9661675

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title = "A W-band driver amplifier in 0.1 μm pHEMT Gallium Arsenide process",

abstract = "This paper presents a four-stage driver amplifier with a high gain, broad band and reasonably high power across a frequency range of 85 to 104 GHz implemented in WIN Semiconductor's 0.1 μm Gallium Arsenide (GaAs) technology. The amplifier design is based on a synthesized transistor model extrapolated from a single measured device characterized at much lower frequencies. It achieves a measured average gain of 18 dB over 19 GHz bandwidth from 85 to 104 GHz. The measured maximum saturated output power is 20 dBm from 92.5 GHz to 100 GHz and the peak PAE of 12.5% at 97 GHz. The amplifier operates at 4 V and has a power consumption of 640 mW. This driver amplifier can be used as a unit cell for a power amplifier. The core area of the amplifier is 0.85 mm2.",

author = "Tran, {Van Dung} and Sudipta Chakraborty and Jakov Mihaljevic and Simon Mahon and Michael Heimlich",

year = "2021",

doi = "10.1109/APMC52720.2021.9661675",

language = "English",

isbn = "9781665437837",

pages = "46--48",

booktitle = "2021 IEEE Asia-Pacific Microwave Conference (APMC)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2021 IEEE Asia-Pacific Microwave Conference, APMC 2021 ; Conference date: 28-11-2021 Through 01-12-2021",

}

Tran, VD, Chakraborty, S , Mihaljevic, J , Mahon, S & Heimlich, M 2021, A W-band driver amplifier in 0.1 μm pHEMT Gallium Arsenide process. in 2021 IEEE Asia-Pacific Microwave Conference (APMC). Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 46-48, 2021 IEEE Asia-Pacific Microwave Conference, APMC 2021, Virtual, Australia, 28/11/21. https://doi.org/10.1109/APMC52720.2021.9661675

A W-band driver amplifier in 0.1 μm pHEMT Gallium Arsenide process. / Tran, Van Dung; Chakraborty, Sudipta ; Mihaljevic, Jakov et al.
2021 IEEE Asia-Pacific Microwave Conference (APMC). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2021. p. 46-48.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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T1 - A W-band driver amplifier in 0.1 μm pHEMT Gallium Arsenide process

AU - Tran, Van Dung

AU - Chakraborty, Sudipta

AU - Mihaljevic, Jakov

AU - Mahon, Simon

AU - Heimlich, Michael

PY - 2021

Y1 - 2021

N2 - This paper presents a four-stage driver amplifier with a high gain, broad band and reasonably high power across a frequency range of 85 to 104 GHz implemented in WIN Semiconductor's 0.1 μm Gallium Arsenide (GaAs) technology. The amplifier design is based on a synthesized transistor model extrapolated from a single measured device characterized at much lower frequencies. It achieves a measured average gain of 18 dB over 19 GHz bandwidth from 85 to 104 GHz. The measured maximum saturated output power is 20 dBm from 92.5 GHz to 100 GHz and the peak PAE of 12.5% at 97 GHz. The amplifier operates at 4 V and has a power consumption of 640 mW. This driver amplifier can be used as a unit cell for a power amplifier. The core area of the amplifier is 0.85 mm2.

AB - This paper presents a four-stage driver amplifier with a high gain, broad band and reasonably high power across a frequency range of 85 to 104 GHz implemented in WIN Semiconductor's 0.1 μm Gallium Arsenide (GaAs) technology. The amplifier design is based on a synthesized transistor model extrapolated from a single measured device characterized at much lower frequencies. It achieves a measured average gain of 18 dB over 19 GHz bandwidth from 85 to 104 GHz. The measured maximum saturated output power is 20 dBm from 92.5 GHz to 100 GHz and the peak PAE of 12.5% at 97 GHz. The amplifier operates at 4 V and has a power consumption of 640 mW. This driver amplifier can be used as a unit cell for a power amplifier. The core area of the amplifier is 0.85 mm2.

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M3 - Conference proceeding contribution

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SN - 9781665437837

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EP - 48

BT - 2021 IEEE Asia-Pacific Microwave Conference (APMC)

PB - Institute of Electrical and Electronics Engineers (IEEE)

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T2 - 2021 IEEE Asia-Pacific Microwave Conference, APMC 2021

Y2 - 28 November 2021 through 1 December 2021

ER -

A W-band driver amplifier in 0.1 μm pHEMT Gallium Arsenide process

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