A wideband integrated marchand balun in silicon technology for millimeter-wave applications

Yi Zhong; Yang Yang

doi:10.1109/ICEAA.2016.7731551

A wideband integrated marchand balun in silicon technology for millimeter-wave applications

Yi Zhong, Yang Yang

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

3 Citations (Scopus)

Abstract

This paper presents an Integrated on-chip balun design for millimeter-wave applications. The balun is designed and fabricated in a standard silicon-germanium technology. The designed balun is based on a coupled-line structure, which consists of two edge-coupled meander lines along with a solid ground plane. The simulation shows that the proposed balun covers the bandwidth from 30 GHz to above 100 GHz. Within this frequency range, the magnitude error and phase error are 0.3 dB and 4°, respectively. The insertion loss of the balun is better than 5 dB at the center of the band. The size of the balun is only 500 μm × 400 μm, excluding the pads.

Original language	English
Title of host publication	Proceedings of the 2016 18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	913-915
Number of pages	3
ISBN (Electronic)	9781467398114
DOIs	https://doi.org/10.1109/ICEAA.2016.7731551
Publication status	Published - 2 Nov 2016
Event	18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016 - Cairns, Australia Duration: 19 Sept 2016 → 23 Sept 2016

Other

Other	18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016
Country/Territory	Australia
City	Cairns
Period	19/09/16 → 23/09/16

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10.1109/ICEAA.2016.7731551

Cite this

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title = "A wideband integrated marchand balun in silicon technology for millimeter-wave applications",

abstract = "This paper presents an Integrated on-chip balun design for millimeter-wave applications. The balun is designed and fabricated in a standard silicon-germanium technology. The designed balun is based on a coupled-line structure, which consists of two edge-coupled meander lines along with a solid ground plane. The simulation shows that the proposed balun covers the bandwidth from 30 GHz to above 100 GHz. Within this frequency range, the magnitude error and phase error are 0.3 dB and 4°, respectively. The insertion loss of the balun is better than 5 dB at the center of the band. The size of the balun is only 500 μm × 400 μm, excluding the pads.",

author = "Yi Zhong and Yang Yang",

year = "2016",

month = nov,

day = "2",

doi = "10.1109/ICEAA.2016.7731551",

language = "English",

pages = "913--915",

booktitle = "Proceedings of the 2016 18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016 ; Conference date: 19-09-2016 Through 23-09-2016",

}

Zhong, Y & Yang, Y 2016, A wideband integrated marchand balun in silicon technology for millimeter-wave applications. in Proceedings of the 2016 18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016., 7731551, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 913-915, 18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016, Cairns, Australia, 19/09/16. https://doi.org/10.1109/ICEAA.2016.7731551

A wideband integrated marchand balun in silicon technology for millimeter-wave applications. / Zhong, Yi; Yang, Yang.
Proceedings of the 2016 18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2016. p. 913-915 7731551.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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N2 - This paper presents an Integrated on-chip balun design for millimeter-wave applications. The balun is designed and fabricated in a standard silicon-germanium technology. The designed balun is based on a coupled-line structure, which consists of two edge-coupled meander lines along with a solid ground plane. The simulation shows that the proposed balun covers the bandwidth from 30 GHz to above 100 GHz. Within this frequency range, the magnitude error and phase error are 0.3 dB and 4°, respectively. The insertion loss of the balun is better than 5 dB at the center of the band. The size of the balun is only 500 μm × 400 μm, excluding the pads.

AB - This paper presents an Integrated on-chip balun design for millimeter-wave applications. The balun is designed and fabricated in a standard silicon-germanium technology. The designed balun is based on a coupled-line structure, which consists of two edge-coupled meander lines along with a solid ground plane. The simulation shows that the proposed balun covers the bandwidth from 30 GHz to above 100 GHz. Within this frequency range, the magnitude error and phase error are 0.3 dB and 4°, respectively. The insertion loss of the balun is better than 5 dB at the center of the band. The size of the balun is only 500 μm × 400 μm, excluding the pads.

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Y2 - 19 September 2016 through 23 September 2016

ER -

A wideband integrated marchand balun in silicon technology for millimeter-wave applications

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