A wideband integrated marchand balun in silicon technology for millimeter-wave applications

Yi Zhong, Yang Yang

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

This paper presents an Integrated on-chip balun design for millimeter-wave applications. The balun is designed and fabricated in a standard silicon-germanium technology. The designed balun is based on a coupled-line structure, which consists of two edge-coupled meander lines along with a solid ground plane. The simulation shows that the proposed balun covers the bandwidth from 30 GHz to above 100 GHz. Within this frequency range, the magnitude error and phase error are 0.3 dB and 4°, respectively. The insertion loss of the balun is better than 5 dB at the center of the band. The size of the balun is only 500 μm × 400 μm, excluding the pads.

Original languageEnglish
Title of host publicationProceedings of the 2016 18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages913-915
Number of pages3
ISBN (Electronic)9781467398114
DOIs
Publication statusPublished - 2 Nov 2016
Event18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016 - Cairns, Australia
Duration: 19 Sep 201623 Sep 2016

Other

Other18th International Conference on Electromagnetics in Advanced Applications, ICEAA 2016
CountryAustralia
CityCairns
Period19/09/1623/09/16

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