Accurate modelling of  GaN HEMT capacitances in the framework of the ASMHEMT model

Sayed Ali Albahrani; Dirk Schwantuschke; Sourabh Khandelwal

doi:10.23919/EuMIC58042.2023.10288780

Accurate modelling of GaN HEMT capacitances in the framework of the ASMHEMT model

Sayed Ali Albahrani^*, Dirk Schwantuschke, Sourabh Khandelwal

^*Corresponding author for this work

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

1 Citation (Scopus)

Abstract

Results of pulsed IV, CV and loadpull measurements performed on a GaN HEMT are presented. A model is developed for this device in the framework of the ASM-HEMT model. The developed model utilizes the advantage of measuring beforehand several parameters of the model; hence, reducing the number of parameters to be optimized for a reasonable fit to the measured data. A new approach for modelling the OFF-state capacitances of GaN HEMT is also presented which accounts for the details of the structure of the device, while at the same time maintaining the speed of the model.

Original language	English
Title of host publication	Proceedings of the 18th European Microwave Integrated Circuits Conference
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	50-53
Number of pages	4
ISBN (Electronic)	9782874870736
ISBN (Print)	9798350348330
DOIs	https://doi.org/10.23919/EuMIC58042.2023.10288780
Publication status	Published - 2023
Event	18th European Microwave Integrated Circuits Conference, EuMIC 2023 - Berlin, Germany Duration: 17 Sept 2023 → 22 Sept 2023

Conference

Conference	18th European Microwave Integrated Circuits Conference, EuMIC 2023
Country/Territory	Germany
City	Berlin
Period	17/09/23 → 22/09/23

Keywords

compact model
GaN
HEMT
semiconductor device measurement
semiconductor device modeling

Access to Document

10.23919/EuMIC58042.2023.10288780

Cite this

@inproceedings{6c8cc8ef3b5b47f781b2c2827215df4e,

title = "Accurate modelling of GaN HEMT capacitances in the framework of the ASMHEMT model",

abstract = "Results of pulsed IV, CV and loadpull measurements performed on a GaN HEMT are presented. A model is developed for this device in the framework of the ASM-HEMT model. The developed model utilizes the advantage of measuring beforehand several parameters of the model; hence, reducing the number of parameters to be optimized for a reasonable fit to the measured data. A new approach for modelling the OFF-state capacitances of GaN HEMT is also presented which accounts for the details of the structure of the device, while at the same time maintaining the speed of the model.",

keywords = "compact model, GaN, HEMT, semiconductor device measurement, semiconductor device modeling",

author = "Albahrani, {Sayed Ali} and Dirk Schwantuschke and Sourabh Khandelwal",

year = "2023",

doi = "10.23919/EuMIC58042.2023.10288780",

language = "English",

isbn = "9798350348330",

pages = "50--53",

booktitle = "Proceedings of the 18th European Microwave Integrated Circuits Conference",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "18th European Microwave Integrated Circuits Conference, EuMIC 2023 ; Conference date: 17-09-2023 Through 22-09-2023",

}

Albahrani, SA, Schwantuschke, D & Khandelwal, S 2023, Accurate modelling of GaN HEMT capacitances in the framework of the ASMHEMT model. in Proceedings of the 18th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 50-53, 18th European Microwave Integrated Circuits Conference, EuMIC 2023, Berlin, Germany, 17/09/23. https://doi.org/10.23919/EuMIC58042.2023.10288780

Accurate modelling of GaN HEMT capacitances in the framework of the ASMHEMT model. / Albahrani, Sayed Ali; Schwantuschke, Dirk; Khandelwal, Sourabh.
Proceedings of the 18th European Microwave Integrated Circuits Conference. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2023. p. 50-53.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Accurate modelling of GaN HEMT capacitances in the framework of the ASMHEMT model

AU - Albahrani, Sayed Ali

AU - Schwantuschke, Dirk

AU - Khandelwal, Sourabh

PY - 2023

Y1 - 2023

N2 - Results of pulsed IV, CV and loadpull measurements performed on a GaN HEMT are presented. A model is developed for this device in the framework of the ASM-HEMT model. The developed model utilizes the advantage of measuring beforehand several parameters of the model; hence, reducing the number of parameters to be optimized for a reasonable fit to the measured data. A new approach for modelling the OFF-state capacitances of GaN HEMT is also presented which accounts for the details of the structure of the device, while at the same time maintaining the speed of the model.

AB - Results of pulsed IV, CV and loadpull measurements performed on a GaN HEMT are presented. A model is developed for this device in the framework of the ASM-HEMT model. The developed model utilizes the advantage of measuring beforehand several parameters of the model; hence, reducing the number of parameters to be optimized for a reasonable fit to the measured data. A new approach for modelling the OFF-state capacitances of GaN HEMT is also presented which accounts for the details of the structure of the device, while at the same time maintaining the speed of the model.

KW - compact model

KW - GaN

KW - HEMT

KW - semiconductor device measurement

KW - semiconductor device modeling

UR - http://www.scopus.com/inward/record.url?scp=85177197241&partnerID=8YFLogxK

U2 - 10.23919/EuMIC58042.2023.10288780

DO - 10.23919/EuMIC58042.2023.10288780

M3 - Conference proceeding contribution

AN - SCOPUS:85177197241

SN - 9798350348330

SP - 50

EP - 53

BT - Proceedings of the 18th European Microwave Integrated Circuits Conference

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 18th European Microwave Integrated Circuits Conference, EuMIC 2023

Y2 - 17 September 2023 through 22 September 2023

ER -