@inproceedings{4b7517630e0a4e3481f978f79b2b5bb3,
title = "Accurate non-linear large signal physics-based modeling for Ka-band GaN power amplifier design with ASM-HEMT",
abstract = "This paper presents for the first-time a physics-based non-linear large signal model for Ka-band GaN power amplifier design using the new industry standard ASM-HEMT compact model. A novel methodology combining the effectiveness and accuracy of modeling the intrinsic device region with ASM-HEMT, and distributed effects at Ka-band with electromagnetic (EM) simulations is developed. The intrinsic semiconductor region for each finger of the GaN HEMT device is modeled with ASM-HEMT, and in a multi-finger device, the single finger model is coupled with EM simulations capturing distributed effects accurately. The developed non-linear model shows excellent accuracy with measured non-linear data for a commercial GaN-HEMT device, and with measurements performed on a Ka-band MMIC power amplifier. ",
keywords = "Compact models, GaN HEMTs, Power Amplifiers, ASM-HEMT",
author = "Jason Hodges and Albahrani, {Sayed Ali} and Bryan Schwitter and Sourabh Khandelwal",
year = "2021",
doi = "10.1109/IMS19712.2021.9574979",
language = "English",
isbn = "9781665431415",
publisher = "Institute of Electrical and Electronics Engineers (IEEE)",
pages = "349--351",
booktitle = "2021 IEEE/MTT-S International Microwave Symposium",
address = "United States",
note = "2021 IEEE MTT-S International Microwave Symposium, IMS 2021 ; Conference date: 07-06-2021 Through 25-06-2021",
}