Accurately measured two-port low frequency noise and correlation of GaAs based HBTs

Oya Sevimli*, Anthony E. Parker, Anthony P. Fattorini, James T. Harvey

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

3 Citations (Scopus)

Abstract

Accurately measured low frequency noise and correlation of GaAs based Heterojunction Bipolar Transistors (HBTs) have been reported between 10 Hz and 100 kHz. The system noises were removed from the data linearly, using noise correlation matrices. Noise shapes and correlation coefficients of HBTs from separate test pieces and of two emitters sizes were compared to reveal possible aging effects. Simulated 1/f noise with a simple non-linear transistor model was used to verify the accuracy of the method.

Original languageEnglish
Title of host publicationProceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011
EditorsM. Jamal Deen, Chih-Hung Chen
Place of PublicationPiscataway, N.J.
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages275-278
Number of pages4
ISBN (Print)9781457701924
DOIs
Publication statusPublished - 2011
Event21st International Conference on Noise and Fluctuations, ICNF 2011 - Toronto, ON, Canada
Duration: 12 Jun 201116 Jun 2011

Other

Other21st International Conference on Noise and Fluctuations, ICNF 2011
CountryCanada
CityToronto, ON
Period12/06/1116/06/11

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