Accurately measured two-port low frequency noise and correlation of GaAs based HBTs

Oya Sevimli; Anthony E. Parker; Anthony P. Fattorini; James T. Harvey

doi:10.1109/ICNF.2011.5994320

Accurately measured two-port low frequency noise and correlation of GaAs based HBTs

Oya Sevimli^*, Anthony E. Parker, Anthony P. Fattorini, James T. Harvey

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

3 Citations (Scopus)

Abstract

Accurately measured low frequency noise and correlation of GaAs based Heterojunction Bipolar Transistors (HBTs) have been reported between 10 Hz and 100 kHz. The system noises were removed from the data linearly, using noise correlation matrices. Noise shapes and correlation coefficients of HBTs from separate test pieces and of two emitters sizes were compared to reveal possible aging effects. Simulated 1/f noise with a simple non-linear transistor model was used to verify the accuracy of the method.

Original language	English
Title of host publication	Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011
Editors	M. Jamal Deen, Chih-Hung Chen
Place of Publication	Piscataway, N.J.
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	275-278
Number of pages	4
ISBN (Print)	9781457701924
DOIs	https://doi.org/10.1109/ICNF.2011.5994320
Publication status	Published - 2011
Event	21st International Conference on Noise and Fluctuations, ICNF 2011 - Toronto, ON, Canada Duration: 12 Jun 2011 → 16 Jun 2011

Other

Other	21st International Conference on Noise and Fluctuations, ICNF 2011
Country/Territory	Canada
City	Toronto, ON
Period	12/06/11 → 16/06/11

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10.1109/ICNF.2011.5994320

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Sevimli, O., Parker, A. E., Fattorini, A. P., & Harvey, J. T. (2011). Accurately measured two-port low frequency noise and correlation of GaAs based HBTs. In M. J. Deen, & C.-H. Chen (Eds.), Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011 (pp. 275-278). Article 5994320 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ICNF.2011.5994320

Sevimli, Oya ; Parker, Anthony E. ; Fattorini, Anthony P. et al. / Accurately measured two-port low frequency noise and correlation of GaAs based HBTs. Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011. editor / M. Jamal Deen ; Chih-Hung Chen. Piscataway, N.J. : Institute of Electrical and Electronics Engineers (IEEE), 2011. pp. 275-278

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title = "Accurately measured two-port low frequency noise and correlation of GaAs based HBTs",

abstract = "Accurately measured low frequency noise and correlation of GaAs based Heterojunction Bipolar Transistors (HBTs) have been reported between 10 Hz and 100 kHz. The system noises were removed from the data linearly, using noise correlation matrices. Noise shapes and correlation coefficients of HBTs from separate test pieces and of two emitters sizes were compared to reveal possible aging effects. Simulated 1/f noise with a simple non-linear transistor model was used to verify the accuracy of the method.",

author = "Oya Sevimli and Parker, {Anthony E.} and Fattorini, {Anthony P.} and Harvey, {James T.}",

year = "2011",

doi = "10.1109/ICNF.2011.5994320",

language = "English",

isbn = "9781457701924",

pages = "275--278",

editor = "Deen, {M. Jamal} and Chih-Hung Chen",

booktitle = "Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "21st International Conference on Noise and Fluctuations, ICNF 2011 ; Conference date: 12-06-2011 Through 16-06-2011",

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Sevimli, O, Parker, AE, Fattorini, AP & Harvey, JT 2011, Accurately measured two-port low frequency noise and correlation of GaAs based HBTs. in MJ Deen & C-H Chen (eds), Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011., 5994320, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, N.J., pp. 275-278, 21st International Conference on Noise and Fluctuations, ICNF 2011, Toronto, ON, Canada, 12/06/11. https://doi.org/10.1109/ICNF.2011.5994320

Accurately measured two-port low frequency noise and correlation of GaAs based HBTs. / Sevimli, Oya; Parker, Anthony E.; Fattorini, Anthony P. et al.
Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011. ed. / M. Jamal Deen; Chih-Hung Chen. Piscataway, N.J.: Institute of Electrical and Electronics Engineers (IEEE), 2011. p. 275-278 5994320.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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AB - Accurately measured low frequency noise and correlation of GaAs based Heterojunction Bipolar Transistors (HBTs) have been reported between 10 Hz and 100 kHz. The system noises were removed from the data linearly, using noise correlation matrices. Noise shapes and correlation coefficients of HBTs from separate test pieces and of two emitters sizes were compared to reveal possible aging effects. Simulated 1/f noise with a simple non-linear transistor model was used to verify the accuracy of the method.

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Sevimli O, Parker AE, Fattorini AP, Harvey JT. Accurately measured two-port low frequency noise and correlation of GaAs based HBTs. In Deen MJ, Chen CH, editors, Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011. Piscataway, N.J.: Institute of Electrical and Electronics Engineers (IEEE). 2011. p. 275-278. 5994320 doi: 10.1109/ICNF.2011.5994320

Accurately measured two-port low frequency noise and correlation of GaAs based HBTs

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