TY - GEN
T1 - Active frequency selective surface using PIN diodes
AU - Kiani, Ghaffer I.
AU - Esselle, Karu P.
AU - Weily, Andrew R.
AU - Ford, Kenneth L.
N1 - Copyright 2007 IEEE. Reprinted from Proceedings of 2007 IEEE Antennas and Propagation International Symposium. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected]. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
PY - 2007
Y1 - 2007
N2 - A novel active frequency selective surface (FSS) is presented for 2.45 GHz applications. It consists of circular aperture elements with four PIN diodes placed orthogonal to each other on FR4 substrate. The negative dc biasing is provided with cross shaped supply lines from the reverse side of the substrate, while positive biasing is provided from the front side of printed circular structure. This active FSS design enables transmission to be switched on or off at 2.45 GHz, providing high transmission when the diodes are in OFF state, and high isolation when the diodes are ON. The design also provides very good stability to oblique TE incidence, i.e perpendicular polarisation. Preliminary theoretical results are described.
AB - A novel active frequency selective surface (FSS) is presented for 2.45 GHz applications. It consists of circular aperture elements with four PIN diodes placed orthogonal to each other on FR4 substrate. The negative dc biasing is provided with cross shaped supply lines from the reverse side of the substrate, while positive biasing is provided from the front side of printed circular structure. This active FSS design enables transmission to be switched on or off at 2.45 GHz, providing high transmission when the diodes are in OFF state, and high isolation when the diodes are ON. The design also provides very good stability to oblique TE incidence, i.e perpendicular polarisation. Preliminary theoretical results are described.
UR - http://www.scopus.com/inward/record.url?scp=48349147554&partnerID=8YFLogxK
U2 - 10.1109/APS.2007.4396549
DO - 10.1109/APS.2007.4396549
M3 - Conference proceeding contribution
AN - SCOPUS:48349147554
SN - 1424408776
SN - 9781424408771
SP - 4525
EP - 4528
BT - 2007 IEEE Antennas and Propagation Society International Symposium, AP-S
PB - Institute of Electrical and Electronics Engineers (IEEE)
CY - Piscataway, NJ
T2 - 2007 IEEE Antennas and Propagation Society International Symposium, AP-S
Y2 - 10 June 2007 through 15 June 2007
ER -