Active frequency selective surface using PIN diodes

Ghaffer I. Kiani, Karu P. Esselle, Andrew R. Weily, Kenneth L. Ford

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

31 Citations (Scopus)
3 Downloads (Pure)

Abstract

A novel active frequency selective surface (FSS) is presented for 2.45 GHz applications. It consists of circular aperture elements with four PIN diodes placed orthogonal to each other on FR4 substrate. The negative dc biasing is provided with cross shaped supply lines from the reverse side of the substrate, while positive biasing is provided from the front side of printed circular structure. This active FSS design enables transmission to be switched on or off at 2.45 GHz, providing high transmission when the diodes are in OFF state, and high isolation when the diodes are ON. The design also provides very good stability to oblique TE incidence, i.e perpendicular polarisation. Preliminary theoretical results are described.

Original languageEnglish
Title of host publication2007 IEEE Antennas and Propagation Society International Symposium, AP-S
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages4525-4528
Number of pages4
ISBN (Print)1424408776, 9781424408771
DOIs
Publication statusPublished - 2007
Event2007 IEEE Antennas and Propagation Society International Symposium, AP-S - Honolulu, HI, United States
Duration: 10 Jun 200715 Jun 2007

Other

Other2007 IEEE Antennas and Propagation Society International Symposium, AP-S
CountryUnited States
CityHonolulu, HI
Period10/06/0715/06/07

Bibliographical note

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