Active switching devices in a tunable EBG structure

Placement strategies and modelling

D. Thalakotuna*, L. Matekovits, M. Heimlich, K. P. Esselle, S. G. Hay

*Corresponding author for this work

Research output: Contribution to journalArticle

8 Citations (Scopus)
1 Downloads (Pure)

Abstract

Different placement strategies for Field-Effect-Transistor (FET) active switching devices in an electromagnetic band gap (EBG) periodic structure are investigated. Two possible placements for the switches are considered: (a) switches on top of a substrate and (b) switches at the ground-plane level. Their advantages and drawbacks are analyzed and discussed in relation to fabrication, extension to 2-D and ground plane design. The transmission results and band gaps of the EBG structure are presented for both switch placements. When determining the transmission of the structure, the FET switches are modeled in two different ways, first as an ideal conductor and then using a more accurate model consisting of embedded scattering parameters. Significant differences have been observed between the results predicted using simple and accurate models. Experimental characterization of the switch reveals technological issues related to their biasing.

Original languageEnglish
Pages (from-to)1740-1751
Number of pages12
JournalJournal of Electromagnetic Waves and Applications
Volume25
Issue number11-12
DOIs
Publication statusPublished - 2011

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