Advanced passivation of laser-doped and grooved solar cells

Sisi Wang*, Ly Mai, Alison Ciesla, Ziv Hameiri, David Payne, Catherine Chan, Brett Hallam, Chee Mun Chong, Jingjia Ji, Zhengrong Shi, Stuart Wenham

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

In this work, we investigate the use of advanced hydrogenation and low-temperature diffusion processes (a 3 h 700 °C process after emitter diffusion) for the electrical neutralization of laser-induced defects for laser doped and grooved solar cells. Despite the laser doping and grooving (LDG) process being performed before silicon nitride passivation to avoid thermal expansion mismatch between the silicon and the silicon nitride layer, some crystallographic defects are still formed during the process. The application of a low-temperature diffusion process increases implied open circuit voltages by 14 mV, potentially due to phosphorus diffusion of dislocated regions induced during laser processing. Laser hydrogenation is shown to be capable of passivating the majority of the remaining laser-induced defects. Over 1% absolute improvement in efficiency is achieved on cells with a full area aluminum back surface field. Preliminary results with minimal optimization demonstrate efficiencies of over 19% with a full area Al back contact cell. The potential to achieve much higher voltages when used with a passivated rear is also demonstrated.

Original languageEnglish
Pages (from-to)403-410
Number of pages8
JournalSolar Energy Materials and Solar Cells
Volume193
DOIs
Publication statusPublished - May 2019
Externally publishedYes

Keywords

  • Silicon solar cells
  • Laser doping
  • Laser grooving
  • Advanced hydrogenation
  • Low temperature diffusion
  • Advanced passivation

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