Abstract
For the simulation of single electronic circuits, the standard Monte Carlo method traces the tunnel events across the nodes of the circuit. This paper presents a Monte-Carlo method based on the analytical distribution of the time between successive tunnel events across the given junction. The method is used to compute the steady state characteristics and the Fano factor. The method is shown to be superior for larger circuits under lower bias conditions.
Original language | English |
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Title of host publication | 2015 International Conference on Computing, Control, Networking, Electronics and Embedded Systems Engineering, ICCNEEE 2015 |
Subtitle of host publication | Proceedings |
Editors | Rashid A. Saeed, Rania A. Mokhtar |
Place of Publication | United States |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 314-317 |
Number of pages | 4 |
ISBN (Electronic) | 9781467378697 |
DOIs | |
Publication status | Published - 2015 |
Externally published | Yes |
Event | 1st International Conference on Computing, Control, Networking, Electronics and Embedded Systems Engineering, ICCNEEE 2015 - Khartoum, Sudan Duration: 7 Sept 2015 → 9 Sept 2015 |
Conference
Conference | 1st International Conference on Computing, Control, Networking, Electronics and Embedded Systems Engineering, ICCNEEE 2015 |
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Country/Territory | Sudan |
City | Khartoum |
Period | 7/09/15 → 9/09/15 |
Keywords
- Fano factor
- Monte-Carlo
- Path based Monte-Carlo
- Single electron tunnelling
- tunnel junctions