AlGaN/GaN HEMT nonlinear model fitting including a trap model

Jabra Tarazi; Bryan K. Schwitter; Anthony E. Parker; Simon J. Mahon

doi:10.1109/MWSYM.2015.7167138

AlGaN/GaN HEMT nonlinear model fitting including a trap model

Jabra Tarazi, Bryan K. Schwitter, Anthony E. Parker, Simon J. Mahon

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

5 Citations (Scopus)

Abstract

A procedure for the extraction of a trap model is applied to an AlGaN/GaN-on-SiC HEMT. The trap model is then used in the extraction of a nonlinear device model. The resulting model accurately relates dc I-V with nonlinear behaviour which is crucial for accurately predicting the load-pull measurements. This modeling procedure can be integrated into a modelling/design flow enabling accurate prediction of device and circuit performance.

Original language	English
Title of host publication	2015 IEEE MTT-S International Microwave Symposium (IMS 2015)
Subtitle of host publication	Phoenix, Arizona, USA 17-22 May 2015
Place of Publication	Picataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-4
Number of pages	4
ISBN (Electronic)	9781479982752
ISBN (Print)	9781479982769
DOIs	https://doi.org/10.1109/MWSYM.2015.7167138
Publication status	Published - 24 Jul 2015
Event	IEEE MTT-S International Microwave Symposium, IMS 2015 - Phoenix, United States Duration: 17 May 2015 → 22 May 2015

Other

Other	IEEE MTT-S International Microwave Symposium, IMS 2015
Country	United States
City	Phoenix
Period	17/05/15 → 22/05/15

Access to Document

10.1109/MWSYM.2015.7167138

Link to publication in Scopus

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Cite this

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title = "AlGaN/GaN HEMT nonlinear model fitting including a trap model",

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author = "Jabra Tarazi and Schwitter, {Bryan K.} and Parker, {Anthony E.} and Mahon, {Simon J.}",

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Tarazi, J, Schwitter, BK, Parker, AE & Mahon, SJ 2015, AlGaN/GaN HEMT nonlinear model fitting including a trap model. in 2015 IEEE MTT-S International Microwave Symposium (IMS 2015): Phoenix, Arizona, USA 17-22 May 2015. Institute of Electrical and Electronics Engineers (IEEE), Picataway, NJ, pp. 1-4, IEEE MTT-S International Microwave Symposium, IMS 2015, Phoenix, United States, 17/05/15. https://doi.org/10.1109/MWSYM.2015.7167138

AlGaN/GaN HEMT nonlinear model fitting including a trap model. / Tarazi, Jabra; Schwitter, Bryan K.; Parker, Anthony E.; Mahon, Simon J.

2015 IEEE MTT-S International Microwave Symposium (IMS 2015): Phoenix, Arizona, USA 17-22 May 2015. Picataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2015. p. 1-4.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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