AlGaN/GaN HEMT nonlinear model fitting including a trap model

Jabra Tarazi; Bryan K. Schwitter; Anthony E. Parker; Simon J. Mahon

doi:10.1109/MWSYM.2015.7167138

AlGaN/GaN HEMT nonlinear model fitting including a trap model

Jabra Tarazi, Bryan K. Schwitter, Anthony E. Parker, Simon J. Mahon

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

5 Citations (Scopus)

Abstract

A procedure for the extraction of a trap model is applied to an AlGaN/GaN-on-SiC HEMT. The trap model is then used in the extraction of a nonlinear device model. The resulting model accurately relates dc I-V with nonlinear behaviour which is crucial for accurately predicting the load-pull measurements. This modeling procedure can be integrated into a modelling/design flow enabling accurate prediction of device and circuit performance.

Original language	English
Title of host publication	2015 IEEE MTT-S International Microwave Symposium (IMS 2015)
Subtitle of host publication	Phoenix, Arizona, USA 17-22 May 2015
Place of Publication	Picataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-4
Number of pages	4
ISBN (Electronic)	9781479982752
ISBN (Print)	9781479982769
DOIs	https://doi.org/10.1109/MWSYM.2015.7167138
Publication status	Published - 24 Jul 2015
Event	IEEE MTT-S International Microwave Symposium, IMS 2015 - Phoenix, United States Duration: 17 May 2015 → 22 May 2015

Other

Other	IEEE MTT-S International Microwave Symposium, IMS 2015
Country	United States
City	Phoenix
Period	17/05/15 → 22/05/15

Access to Document

10.1109/MWSYM.2015.7167138

Link to publication in Scopus

Cite this

@inproceedings{4f2f0e6177344d20adc0f1bd990cc7c8,

title = "AlGaN/GaN HEMT nonlinear model fitting including a trap model",

abstract = "A procedure for the extraction of a trap model is applied to an AlGaN/GaN-on-SiC HEMT. The trap model is then used in the extraction of a nonlinear device model. The resulting model accurately relates dc I-V with nonlinear behaviour which is crucial for accurately predicting the load-pull measurements. This modeling procedure can be integrated into a modelling/design flow enabling accurate prediction of device and circuit performance.",

author = "Jabra Tarazi and Schwitter, {Bryan K.} and Parker, {Anthony E.} and Mahon, {Simon J.}",

year = "2015",

month = jul,

day = "24",

doi = "10.1109/MWSYM.2015.7167138",

language = "English",

isbn = "9781479982769",

pages = "1--4",

booktitle = "2015 IEEE MTT-S International Microwave Symposium (IMS 2015)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "IEEE MTT-S International Microwave Symposium, IMS 2015 ; Conference date: 17-05-2015 Through 22-05-2015",

}

Tarazi, J, Schwitter, BK, Parker, AE & Mahon, SJ 2015, AlGaN/GaN HEMT nonlinear model fitting including a trap model. in 2015 IEEE MTT-S International Microwave Symposium (IMS 2015): Phoenix, Arizona, USA 17-22 May 2015. Institute of Electrical and Electronics Engineers (IEEE), Picataway, NJ, pp. 1-4, IEEE MTT-S International Microwave Symposium, IMS 2015, Phoenix, United States, 17/05/15. https://doi.org/10.1109/MWSYM.2015.7167138

AlGaN/GaN HEMT nonlinear model fitting including a trap model. / Tarazi, Jabra; Schwitter, Bryan K.; Parker, Anthony E.; Mahon, Simon J.

2015 IEEE MTT-S International Microwave Symposium (IMS 2015): Phoenix, Arizona, USA 17-22 May 2015. Picataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2015. p. 1-4.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - AlGaN/GaN HEMT nonlinear model fitting including a trap model

AU - Tarazi, Jabra

AU - Schwitter, Bryan K.

AU - Parker, Anthony E.

AU - Mahon, Simon J.

PY - 2015/7/24

Y1 - 2015/7/24

N2 - A procedure for the extraction of a trap model is applied to an AlGaN/GaN-on-SiC HEMT. The trap model is then used in the extraction of a nonlinear device model. The resulting model accurately relates dc I-V with nonlinear behaviour which is crucial for accurately predicting the load-pull measurements. This modeling procedure can be integrated into a modelling/design flow enabling accurate prediction of device and circuit performance.

AB - A procedure for the extraction of a trap model is applied to an AlGaN/GaN-on-SiC HEMT. The trap model is then used in the extraction of a nonlinear device model. The resulting model accurately relates dc I-V with nonlinear behaviour which is crucial for accurately predicting the load-pull measurements. This modeling procedure can be integrated into a modelling/design flow enabling accurate prediction of device and circuit performance.

UR - http://www.scopus.com/inward/record.url?scp=84946038236&partnerID=8YFLogxK

U2 - 10.1109/MWSYM.2015.7167138

DO - 10.1109/MWSYM.2015.7167138

M3 - Conference proceeding contribution

AN - SCOPUS:84946038236

SN - 9781479982769

SP - 1

EP - 4

BT - 2015 IEEE MTT-S International Microwave Symposium (IMS 2015)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Picataway, NJ

T2 - IEEE MTT-S International Microwave Symposium, IMS 2015

Y2 - 17 May 2015 through 22 May 2015

ER -

AlGaN/GaN HEMT nonlinear model fitting including a trap model

Abstract

Other

Access to Document

Fingerprint

Cite this