AlGaN/GaN HEMT nonlinear model fitting including a trap model

Jabra Tarazi, Bryan K. Schwitter, Anthony E. Parker, Simon J. Mahon

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

5 Citations (Scopus)


A procedure for the extraction of a trap model is applied to an AlGaN/GaN-on-SiC HEMT. The trap model is then used in the extraction of a nonlinear device model. The resulting model accurately relates dc I-V with nonlinear behaviour which is crucial for accurately predicting the load-pull measurements. This modeling procedure can be integrated into a modelling/design flow enabling accurate prediction of device and circuit performance.

Original languageEnglish
Title of host publication2015 IEEE MTT-S International Microwave Symposium (IMS 2015)
Subtitle of host publicationPhoenix, Arizona, USA 17-22 May 2015
Place of PublicationPicataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages4
ISBN (Electronic)9781479982752
ISBN (Print)9781479982769
Publication statusPublished - 24 Jul 2015
EventIEEE MTT-S International Microwave Symposium, IMS 2015 - Phoenix, United States
Duration: 17 May 201522 May 2015

Publication series

NameIEEE MTT-S International Microwave Symposium
ISSN (Print)0149-645X


OtherIEEE MTT-S International Microwave Symposium, IMS 2015
Country/TerritoryUnited States


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