Abstract
A procedure for the extraction of a trap model is applied to an AlGaN/GaN-on-SiC HEMT. The trap model is then used in the extraction of a nonlinear device model. The resulting model accurately relates dc I-V with nonlinear behaviour which is crucial for accurately predicting the load-pull measurements. This modeling procedure can be integrated into a modelling/design flow enabling accurate prediction of device and circuit performance.
Original language | English |
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Title of host publication | 2015 IEEE MTT-S International Microwave Symposium (IMS 2015) |
Subtitle of host publication | Phoenix, Arizona, USA 17-22 May 2015 |
Place of Publication | Picataway, NJ |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 1-4 |
Number of pages | 4 |
ISBN (Electronic) | 9781479982752 |
ISBN (Print) | 9781479982769 |
DOIs | |
Publication status | Published - 24 Jul 2015 |
Event | IEEE MTT-S International Microwave Symposium, IMS 2015 - Phoenix, United States Duration: 17 May 2015 → 22 May 2015 |
Other
Other | IEEE MTT-S International Microwave Symposium, IMS 2015 |
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Country | United States |
City | Phoenix |
Period | 17/05/15 → 22/05/15 |