An accurate compact model for GaN power switches with the physics-based ASM-HEMT model

Sourabh Khandelwal, M. Labrecque, Y. Huang, F. Qi, Z. Wang, P. Smith, Y. Wu, R. Lal

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

Abstract

A compact/SPICE model for normally-off 650 V GaN power switches is presented. The industry standard physics-based ASM-HEMT model is used as the base for modeling the GaN HEMT in the cascode configured power switch. Accurate models for current-voltage (I-V) and capacitance-voltage (C-V) characteristics have been obtained. It is found that the bias-dependent two-dimensional electron gas under the field-plate regions are very important for modelling the complex capacitances of the cascode switch. Field-plates have been modeled with the ASM-HEMT formulations, and accurate models for input, output, and reverse transfer capacitance of the switch is obtained. The compact model for the full switch is created by synthesizing the MOSFET and HEMT models and optimizing model parameters.

Original languageEnglish
Title of host publication2021 IEEE Applied Power Electronics Conference and Exposition (APEC)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages2389-2392
Number of pages4
ISBN (Electronic)9781728189499, 9781728189482
ISBN (Print)9781728189505
DOIs
Publication statusPublished - 2021
Event36th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2021 - Virtual, Online, United States
Duration: 14 Jun 202117 Jun 2021

Publication series

Name
ISSN (Print)1048-2334
ISSN (Electronic)2470-6647

Conference

Conference36th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2021
CountryUnited States
CityVirtual, Online
Period14/06/2117/06/21

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