An analytical model for hot carrier induced long-term degradation in power amplifiers

Hossein Eslahi; Sayed Ali Albahrani; Dhawal Mahajan; Sourabh Khandelwal

doi:10.1109/TCAD.2019.2952554

An analytical model for hot carrier induced long-term degradation in power amplifiers

Hossein Eslahi^*, Sayed Ali Albahrani, Dhawal Mahajan, Sourabh Khandelwal

^*Corresponding author for this work

School of Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Degradation of power amplifier (PA), being a main part of a transceiver chain, affects the overall performance of a transceiver. This article reports, for the first time, an analytical reliability model of the hot-carrier injection (HCI) induced degradation in silicon-based PAs. HCI causes substrate current which is used to develop the proposed model. This model fits very well the simulation results of RelXpert, which is a well-established reliability simulation tool. This model predicts circuit degradation as a function of conduction angle and is valid for the different classes of PAs. With this model, a new approach for 'reliability aware design' for PA design is developed and a tradeoff between PA performance and reliability is introduced.

Original language	English
Pages (from-to)	2000-2005
Number of pages	6
Journal	IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume	39
Issue number	10
DOIs	https://doi.org/10.1109/TCAD.2019.2952554
Publication status	Published - Oct 2020

Access to Document

10.1109/TCAD.2019.2952554

Cite this

@article{c9b254ba8bf54f17a5e3df4c86b5054a,

title = "An analytical model for hot carrier induced long-term degradation in power amplifiers",

abstract = "Degradation of power amplifier (PA), being a main part of a transceiver chain, affects the overall performance of a transceiver. This article reports, for the first time, an analytical reliability model of the hot-carrier injection (HCI) induced degradation in silicon-based PAs. HCI causes substrate current which is used to develop the proposed model. This model fits very well the simulation results of RelXpert, which is a well-established reliability simulation tool. This model predicts circuit degradation as a function of conduction angle and is valid for the different classes of PAs. With this model, a new approach for 'reliability aware design' for PA design is developed and a tradeoff between PA performance and reliability is introduced. ",

author = "Hossein Eslahi and Albahrani, {Sayed Ali} and Dhawal Mahajan and Sourabh Khandelwal",

year = "2020",

month = oct,

doi = "10.1109/TCAD.2019.2952554",

language = "English",

volume = "39",

pages = "2000--2005",

journal = "IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems",

issn = "0278-0070",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

number = "10",

}

TY - JOUR

T1 - An analytical model for hot carrier induced long-term degradation in power amplifiers

AU - Eslahi, Hossein

AU - Albahrani, Sayed Ali

AU - Mahajan, Dhawal

AU - Khandelwal, Sourabh

PY - 2020/10

Y1 - 2020/10

N2 - Degradation of power amplifier (PA), being a main part of a transceiver chain, affects the overall performance of a transceiver. This article reports, for the first time, an analytical reliability model of the hot-carrier injection (HCI) induced degradation in silicon-based PAs. HCI causes substrate current which is used to develop the proposed model. This model fits very well the simulation results of RelXpert, which is a well-established reliability simulation tool. This model predicts circuit degradation as a function of conduction angle and is valid for the different classes of PAs. With this model, a new approach for 'reliability aware design' for PA design is developed and a tradeoff between PA performance and reliability is introduced.

AB - Degradation of power amplifier (PA), being a main part of a transceiver chain, affects the overall performance of a transceiver. This article reports, for the first time, an analytical reliability model of the hot-carrier injection (HCI) induced degradation in silicon-based PAs. HCI causes substrate current which is used to develop the proposed model. This model fits very well the simulation results of RelXpert, which is a well-established reliability simulation tool. This model predicts circuit degradation as a function of conduction angle and is valid for the different classes of PAs. With this model, a new approach for 'reliability aware design' for PA design is developed and a tradeoff between PA performance and reliability is introduced.

UR - http://www.scopus.com/inward/record.url?scp=85095798433&partnerID=8YFLogxK

U2 - 10.1109/TCAD.2019.2952554

DO - 10.1109/TCAD.2019.2952554

M3 - Article

AN - SCOPUS:85095798433

VL - 39

SP - 2000

EP - 2005

JO - IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

JF - IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

SN - 0278-0070

IS - 10

ER -

An analytical model for hot carrier induced long-term degradation in power amplifiers

Abstract

Access to Document

Other files and links

Fingerprint

Cite this