An analytical model for hot carrier induced long-term degradation in power amplifiers

Hossein Eslahi*, Sayed Ali Albahrani, Dhawal Mahajan, Sourabh Khandelwal

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Degradation of power amplifier (PA), being a main part of a transceiver chain, affects the overall performance of a transceiver. This article reports, for the first time, an analytical reliability model of the hot-carrier injection (HCI) induced degradation in silicon-based PAs. HCI causes substrate current which is used to develop the proposed model. This model fits very well the simulation results of RelXpert, which is a well-established reliability simulation tool. This model predicts circuit degradation as a function of conduction angle and is valid for the different classes of PAs. With this model, a new approach for 'reliability aware design' for PA design is developed and a tradeoff between PA performance and reliability is introduced.

Original languageEnglish
Pages (from-to)2000-2005
Number of pages6
JournalIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume39
Issue number10
DOIs
Publication statusPublished - Oct 2020

Fingerprint

Dive into the research topics of 'An analytical model for hot carrier induced long-term degradation in power amplifiers'. Together they form a unique fingerprint.

Cite this