An analytical model for hot carrier induced long-term degradation in power amplifiers

Hossein Eslahi; Sayed Ali Albahrani; Dhawal Mahajan; Sourabh Khandelwal

doi:10.1109/TCAD.2019.2952554

An analytical model for hot carrier induced long-term degradation in power amplifiers

Hossein Eslahi^*, Sayed Ali Albahrani, Dhawal Mahajan, Sourabh Khandelwal

^*Corresponding author for this work

School of Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Degradation of power amplifier (PA), being a main part of a transceiver chain, affects the overall performance of a transceiver. This article reports, for the first time, an analytical reliability model of the hot-carrier injection (HCI) induced degradation in silicon-based PAs. HCI causes substrate current which is used to develop the proposed model. This model fits very well the simulation results of RelXpert, which is a well-established reliability simulation tool. This model predicts circuit degradation as a function of conduction angle and is valid for the different classes of PAs. With this model, a new approach for 'reliability aware design' for PA design is developed and a tradeoff between PA performance and reliability is introduced.

Original language	English
Pages (from-to)	2000-2005
Number of pages	6
Journal	IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume	39
Issue number	10
DOIs	https://doi.org/10.1109/TCAD.2019.2952554
Publication status	Published - Oct 2020

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AB - Degradation of power amplifier (PA), being a main part of a transceiver chain, affects the overall performance of a transceiver. This article reports, for the first time, an analytical reliability model of the hot-carrier injection (HCI) induced degradation in silicon-based PAs. HCI causes substrate current which is used to develop the proposed model. This model fits very well the simulation results of RelXpert, which is a well-established reliability simulation tool. This model predicts circuit degradation as a function of conduction angle and is valid for the different classes of PAs. With this model, a new approach for 'reliability aware design' for PA design is developed and a tradeoff between PA performance and reliability is introduced.

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An analytical model for hot carrier induced long-term degradation in power amplifiers

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