An edge-coupled marchand balun with partial ground for excellent balance in 0.13 μm SiGe technology

Sudipta Chakraborty; Leigh E. Milner; Xi Zhu; Oya Sevimli; Anthony E. Parker; Michael C. Heimlich

doi:10.1109/TCSII.2020.3004642

An edge-coupled marchand balun with partial ground for excellent balance in 0.13 μm SiGe technology

Sudipta Chakraborty^*, Leigh E. Milner, Xi Zhu, Oya Sevimli, Anthony E. Parker, Michael C. Heimlich

^*Corresponding author for this work

School of Engineering

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

An edge-coupled meandered three-coupled-line Marchand balun with a partial ground plane implemented in 0.13 μm SiGe Bi-CMOS technology is presented in this brief. The balance performance of the designed balun is significantly improved by creating a `no ground plane' beneath the coupledline structure, which is demonstrated by simulating two baluns: one with a partial ground and the other with a solid ground underneath. The measured amplitude and phase imbalances are less than 0.4 dB and 2.5°, across the 3-dB bandwidth from 21.5 to 95 GHz, surpassing previously reported results of edge-coupled Marchand baluns. The balun occupies 230 μm × 370 μm.

Original language	English
Pages (from-to)	226-230
Number of pages	5
Journal	IEEE Transactions on Circuits and Systems II: Express Briefs
Volume	68
Issue number	1
DOIs	https://doi.org/10.1109/TCSII.2020.3004642
Publication status	Published - Jan 2021

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10.1109/TCSII.2020.3004642

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title = "An edge-coupled marchand balun with partial ground for excellent balance in 0.13 μm SiGe technology",

abstract = "An edge-coupled meandered three-coupled-line Marchand balun with a partial ground plane implemented in 0.13 μm SiGe Bi-CMOS technology is presented in this brief. The balance performance of the designed balun is significantly improved by creating a `no ground plane' beneath the coupledline structure, which is demonstrated by simulating two baluns: one with a partial ground and the other with a solid ground underneath. The measured amplitude and phase imbalances are less than 0.4 dB and 2.5°, across the 3-dB bandwidth from 21.5 to 95 GHz, surpassing previously reported results of edge-coupled Marchand baluns. The balun occupies 230 μm × 370 μm.",

author = "Sudipta Chakraborty and Milner, {Leigh E.} and Xi Zhu and Oya Sevimli and Parker, {Anthony E.} and Heimlich, {Michael C.}",

year = "2021",

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T1 - An edge-coupled marchand balun with partial ground for excellent balance in 0.13 μm SiGe technology

AU - Chakraborty, Sudipta

AU - Milner, Leigh E.

AU - Zhu, Xi

AU - Sevimli, Oya

AU - Parker, Anthony E.

AU - Heimlich, Michael C.

PY - 2021/1

Y1 - 2021/1

N2 - An edge-coupled meandered three-coupled-line Marchand balun with a partial ground plane implemented in 0.13 μm SiGe Bi-CMOS technology is presented in this brief. The balance performance of the designed balun is significantly improved by creating a `no ground plane' beneath the coupledline structure, which is demonstrated by simulating two baluns: one with a partial ground and the other with a solid ground underneath. The measured amplitude and phase imbalances are less than 0.4 dB and 2.5°, across the 3-dB bandwidth from 21.5 to 95 GHz, surpassing previously reported results of edge-coupled Marchand baluns. The balun occupies 230 μm × 370 μm.

AB - An edge-coupled meandered three-coupled-line Marchand balun with a partial ground plane implemented in 0.13 μm SiGe Bi-CMOS technology is presented in this brief. The balance performance of the designed balun is significantly improved by creating a `no ground plane' beneath the coupledline structure, which is demonstrated by simulating two baluns: one with a partial ground and the other with a solid ground underneath. The measured amplitude and phase imbalances are less than 0.4 dB and 2.5°, across the 3-dB bandwidth from 21.5 to 95 GHz, surpassing previously reported results of edge-coupled Marchand baluns. The balun occupies 230 μm × 370 μm.

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An edge-coupled marchand balun with partial ground for excellent balance in 0.13 μm SiGe technology

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Technology optimisation of integrated circuits with applications to wireless communication systems in medicine

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An edge-coupled marchand balun with partial ground for excellent balance in 0.13 μm SiGe technology

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Technology optimisation of integrated circuits with applications to wireless communication systems in medicine

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