An Improved FET Model for Computer Simulators

Anthony E. Parker; David J. Skellern

doi:10.1109/43.55175

An Improved FET Model for Computer Simulators

Anthony E. Parker, David J. Skellern

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

An alternative simple description of FET drain current provides the flexibility of an extra parameter which can be chosen to approximate the Shockley expression or general power law. An empirical polynomial expression which uses only integer powers is used to provide computational efficiency. The new expression gives the designer a more accurate FET model which is consistent for both large-and small-signal simulations.

Original language	English
Pages (from-to)	551-553
Number of pages	3
Journal	IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume	9
Issue number	5
DOIs	https://doi.org/10.1109/43.55175
Publication status	Published - 1990
Externally published	Yes

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title = "An Improved FET Model for Computer Simulators",

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An Improved FET Model for Computer Simulators

Abstract

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