An Improved FET Model for Computer Simulators

Anthony E. Parker, David J. Skellern

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

An alternative simple description of FET drain current provides the flexibility of an extra parameter which can be chosen to approximate the Shockley expression or general power law. An empirical polynomial expression which uses only integer powers is used to provide computational efficiency. The new expression gives the designer a more accurate FET model which is consistent for both large-and small-signal simulations.

Original languageEnglish
Pages (from-to)551-553
Number of pages3
JournalIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume9
Issue number5
DOIs
Publication statusPublished - 1990
Externally publishedYes

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