We present an accurate and computationally efficient physics-based compact model to quantitatively analyze negative capacitance FET (NCFET) for real circuit design applications. Our model is based on the Landau-Khalatnikov equation coupled to the standard BSIM6 MOSFET model and implemented in Verilog-A. It includes transient and temperature effects, and accurately captures different aspects of NCFET. A comprehensive quasi-static analysis of NCFET in its different regions of operation is also performed using a simpler loadline approach. We also analyze the impact of ferroelectric and gate oxide thicknesses on the performance gain of NCFET over MOSFET.
|Number of pages||5|
|Journal||IEEE Transactions on Electron Devices|
|Publication status||Published - 1 Dec 2016|
- Compact modeling
- negative capacitance
- Negative capacitance FET (NCFET)