Abstract
We present an accurate and computationally efficient physics-based compact model to quantitatively analyze negative capacitance FET (NCFET) for real circuit design applications. Our model is based on the Landau-Khalatnikov equation coupled to the standard BSIM6 MOSFET model and implemented in Verilog-A. It includes transient and temperature effects, and accurately captures different aspects of NCFET. A comprehensive quasi-static analysis of NCFET in its different regions of operation is also performed using a simpler loadline approach. We also analyze the impact of ferroelectric and gate oxide thicknesses on the performance gain of NCFET over MOSFET.
Original language | English |
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Article number | 7588064 |
Pages (from-to) | 4981-4985 |
Number of pages | 5 |
Journal | IEEE Transactions on Electron Devices |
Volume | 63 |
Issue number | 12 |
DOIs | |
Publication status | Published - 1 Dec 2016 |
Externally published | Yes |
Keywords
- Compact modeling
- ferroelectric
- negative capacitance
- Negative capacitance FET (NCFET)