Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance-Part II: Model Validation

Girish Pahwa; Tapas Dutta; Amit Agarwal; Sourabh Khandelwal; Sayeef Salahuddin; Chenming Hu; Yogesh Singh Chauhan

doi:10.1109/TED.2016.2614436

Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance-Part II: Model Validation

Girish Pahwa, Tapas Dutta, Amit Agarwal, Sourabh Khandelwal, Sayeef Salahuddin, Chenming Hu, Yogesh Singh Chauhan

Research output: Contribution to journal › Article › peer-review

120 Citations (Scopus)

Abstract

In this paper, we show a validation of our compact model for negative capacitance FET (NCFET) presented in Part I. The model is thoroughly validated with the TCAD simulations with respect to ferroelectric thickness scaling and temperature effects. Interestingly, we find that an NCFET with PZT ferroelectric of a large thickness provides a negative output differential resistance in addition to an expected high ON current and a sub-60 mV/decade subthreshold swing. The model is also tested for the Gummel symmetry and its transient capabilities are highlighted through a ring oscillator circuit simulation.

Original language	English
Article number	7590009
Pages (from-to)	4986-4992
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	63
Issue number	12
DOIs	https://doi.org/10.1109/TED.2016.2614436
Publication status	Published - 1 Dec 2016
Externally published	Yes

Keywords

Compact modeling
Ferroelectric
Negative capacitance
negative capacitance FET (NCFET)
negative differential resistance (NDR)
temperature effects
Transients

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10.1109/TED.2016.2614436

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@article{b85ead1ec1b94a159732a17e876b33ae,

title = "Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance-Part II: Model Validation",

abstract = "In this paper, we show a validation of our compact model for negative capacitance FET (NCFET) presented in Part I. The model is thoroughly validated with the TCAD simulations with respect to ferroelectric thickness scaling and temperature effects. Interestingly, we find that an NCFET with PZT ferroelectric of a large thickness provides a negative output differential resistance in addition to an expected high ON current and a sub-60 mV/decade subthreshold swing. The model is also tested for the Gummel symmetry and its transient capabilities are highlighted through a ring oscillator circuit simulation.",

keywords = "Compact modeling, Ferroelectric, Negative capacitance, negative capacitance FET (NCFET), negative differential resistance (NDR), temperature effects, Transients",

author = "Girish Pahwa and Tapas Dutta and Amit Agarwal and Sourabh Khandelwal and Sayeef Salahuddin and Chenming Hu and Chauhan, {Yogesh Singh}",

year = "2016",

month = dec,

day = "1",

doi = "10.1109/TED.2016.2614436",

language = "English",

volume = "63",

pages = "4986--4992",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

number = "12",

}

Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance-Part II : Model Validation. / Pahwa, Girish; Dutta, Tapas; Agarwal, Amit et al.

In: IEEE Transactions on Electron Devices, Vol. 63, No. 12, 7590009, 01.12.2016, p. 4986-4992.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance-Part II

T2 - Model Validation

AU - Pahwa, Girish

AU - Dutta, Tapas

AU - Agarwal, Amit

AU - Khandelwal, Sourabh

AU - Salahuddin, Sayeef

AU - Hu, Chenming

AU - Chauhan, Yogesh Singh

PY - 2016/12/1

Y1 - 2016/12/1

N2 - In this paper, we show a validation of our compact model for negative capacitance FET (NCFET) presented in Part I. The model is thoroughly validated with the TCAD simulations with respect to ferroelectric thickness scaling and temperature effects. Interestingly, we find that an NCFET with PZT ferroelectric of a large thickness provides a negative output differential resistance in addition to an expected high ON current and a sub-60 mV/decade subthreshold swing. The model is also tested for the Gummel symmetry and its transient capabilities are highlighted through a ring oscillator circuit simulation.

AB - In this paper, we show a validation of our compact model for negative capacitance FET (NCFET) presented in Part I. The model is thoroughly validated with the TCAD simulations with respect to ferroelectric thickness scaling and temperature effects. Interestingly, we find that an NCFET with PZT ferroelectric of a large thickness provides a negative output differential resistance in addition to an expected high ON current and a sub-60 mV/decade subthreshold swing. The model is also tested for the Gummel symmetry and its transient capabilities are highlighted through a ring oscillator circuit simulation.

KW - Compact modeling

KW - Ferroelectric

KW - Negative capacitance

KW - negative capacitance FET (NCFET)

KW - negative differential resistance (NDR)

KW - temperature effects

KW - Transients

UR - http://www.scopus.com/inward/record.url?scp=85002917223&partnerID=8YFLogxK

U2 - 10.1109/TED.2016.2614436

DO - 10.1109/TED.2016.2614436

M3 - Article

AN - SCOPUS:85002917223

VL - 63

SP - 4986

EP - 4992

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 12

M1 - 7590009

ER -

Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance-Part II: Model Validation

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Keywords

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