Analysis and modeling of cross-coupling and substrate capacitances in GaN HEMTs for power-electronic applications

Sheikh Aamir Ahsan, Sudip Ghosh, Sourabh Khandelwal, Yogesh Singh Chauhan

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

In this paper, we present a capacitance model for field-plate AlGaN/GaN High Electron Mobility Transistor (HEMTs) accounting for the contribution of substrate capacitances and cross-coupling between field plates. TCAD simulations are performed to analyze both these contributions and analytical expressions for charges corresponding to the cross-coupling and substrate capacitances are presented in terms of our existing surface-potential-based model. The modeled results are validated by comparing the time domain waveforms of a test circuit using a mixed-mode simulation setup in which the impact of cross-coupling and substrate capacitances on accuracy of switching transients predicted by the model is discussed.

Original languageEnglish
Pages (from-to)816-823
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume64
Issue number3
DOIs
Publication statusPublished - Mar 2017

Cite this