Analysis and modeling of flicker noise in lateral asymmetric channel MOSFETs

Harshit Agarwal; Pragya Kushwaha; Chetan Gupta; Sourabh Khandelwal; Chenming Hu; Yogesh Singh Chauhan

doi:10.1016/j.sse.2015.10.002

Analysis and modeling of flicker noise in lateral asymmetric channel MOSFETs

Harshit Agarwal^*, Pragya Kushwaha, Chetan Gupta, Sourabh Khandelwal, Chenming Hu, Yogesh Singh Chauhan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

In this paper, flicker noise behavior of lateral non-uniformly doped MOSFET is studied using impedance field method. Our study shows that Klaassen Prins (KP) method, which forms the basis of noise model in MOSFETs, underestimates flicker noise in such devices. The same KP method overestimates thermal noise by 2-3 orders of magnitude in similar devices as demonstrated in Roy et al. (2007). This apparent discrepancy between thermal and flicker noise behavior lies in origin of these noises, which leads to opposite trend of local noise power spectral density vs doping. We have modeled the physics behind such behavior, which also explain the trends observed in the measurements (Agarwal et al., 2015).

Original language	English
Pages (from-to)	33-38
Number of pages	6
Journal	Solid-State Electronics
Volume	115
DOIs	https://doi.org/10.1016/j.sse.2015.10.002
Publication status	Published - 1 Jan 2016
Externally published	Yes

Keywords

Flicker noise
Impedance field
Lateral asymmetry
Non uniform doping

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10.1016/j.sse.2015.10.002

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title = "Analysis and modeling of flicker noise in lateral asymmetric channel MOSFETs",

abstract = "In this paper, flicker noise behavior of lateral non-uniformly doped MOSFET is studied using impedance field method. Our study shows that Klaassen Prins (KP) method, which forms the basis of noise model in MOSFETs, underestimates flicker noise in such devices. The same KP method overestimates thermal noise by 2-3 orders of magnitude in similar devices as demonstrated in Roy et al. (2007). This apparent discrepancy between thermal and flicker noise behavior lies in origin of these noises, which leads to opposite trend of local noise power spectral density vs doping. We have modeled the physics behind such behavior, which also explain the trends observed in the measurements (Agarwal et al., 2015).",

keywords = "Flicker noise, Impedance field, Lateral asymmetry, Non uniform doping",

author = "Harshit Agarwal and Pragya Kushwaha and Chetan Gupta and Sourabh Khandelwal and Chenming Hu and Chauhan, {Yogesh Singh}",

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T1 - Analysis and modeling of flicker noise in lateral asymmetric channel MOSFETs

AU - Agarwal, Harshit

AU - Kushwaha, Pragya

AU - Gupta, Chetan

AU - Khandelwal, Sourabh

AU - Hu, Chenming

AU - Chauhan, Yogesh Singh

PY - 2016/1/1

Y1 - 2016/1/1

N2 - In this paper, flicker noise behavior of lateral non-uniformly doped MOSFET is studied using impedance field method. Our study shows that Klaassen Prins (KP) method, which forms the basis of noise model in MOSFETs, underestimates flicker noise in such devices. The same KP method overestimates thermal noise by 2-3 orders of magnitude in similar devices as demonstrated in Roy et al. (2007). This apparent discrepancy between thermal and flicker noise behavior lies in origin of these noises, which leads to opposite trend of local noise power spectral density vs doping. We have modeled the physics behind such behavior, which also explain the trends observed in the measurements (Agarwal et al., 2015).

AB - In this paper, flicker noise behavior of lateral non-uniformly doped MOSFET is studied using impedance field method. Our study shows that Klaassen Prins (KP) method, which forms the basis of noise model in MOSFETs, underestimates flicker noise in such devices. The same KP method overestimates thermal noise by 2-3 orders of magnitude in similar devices as demonstrated in Roy et al. (2007). This apparent discrepancy between thermal and flicker noise behavior lies in origin of these noises, which leads to opposite trend of local noise power spectral density vs doping. We have modeled the physics behind such behavior, which also explain the trends observed in the measurements (Agarwal et al., 2015).

KW - Flicker noise

KW - Impedance field

KW - Lateral asymmetry

KW - Non uniform doping

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DO - 10.1016/j.sse.2015.10.002

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SN - 0038-1101

VL - 115

SP - 33

EP - 38

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Analysis and modeling of flicker noise in lateral asymmetric channel MOSFETs

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Keywords

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