Analysis and modeling of low frequency noise in presence of doping non-uniformity in MOSFETs

Harshit Agarwal; Chetan Gupta; Yogesh S. Chauhan; Sourabh Khandelwal; Chenming Hu; Sagnik Dey; Kaiman Chan

doi:10.1109/ICEmElec.2016.8074572

Analysis and modeling of low frequency noise in presence of doping non-uniformity in MOSFETs

Harshit Agarwal, Chetan Gupta, Yogesh S. Chauhan, Sourabh Khandelwal, Chenming Hu, Sagnik Dey, Kaiman Chan

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

3 Citations (Scopus)

Abstract

In this paper, we demonstrate using extensive TCAD simulations that low frequency noise behavior is significantly different in presence of halo implants. The study of the noise behavior is extended to source side halo, drain side halo, symmetric halos and uniformly doped devices for different doping and length of the halo regions. Our study shows that source side halo region is responsible for the anomalous noise behavior in saturation. Such noise behavior can be accurately modeled with the presented SPICE model over wide range of biases and geometries. This study physically explains the trends observed in low frequency noise measurement in advanced CMOS technologies.

Original language	English
Title of host publication	2016 3rd International Conference on Emerging Electronics (ICEE)
Place of Publication	Piscataway, NJ, USA
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-4
Number of pages	4
ISBN (Electronic)	9781509036592
ISBN (Print)	9781509036608
DOIs	https://doi.org/10.1109/ICEmElec.2016.8074572
Publication status	Published - 18 Oct 2017
Externally published	Yes
Event	3rd International Conference on Emerging Electronics, ICEE 2016 - Mumbai, India Duration: 27 Dec 2016 → 30 Dec 2016

Conference

Conference	3rd International Conference on Emerging Electronics, ICEE 2016
Country/Territory	India
City	Mumbai
Period	27/12/16 → 30/12/16

Keywords

Flicker Noise
Green Function
Halo Implants

Access to Document

10.1109/ICEmElec.2016.8074572

Cite this

Agarwal, H., Gupta, C., Chauhan, Y. S., Khandelwal, S., Hu, C., Dey, S., & Chan, K. (2017). Analysis and modeling of low frequency noise in presence of doping non-uniformity in MOSFETs. In 2016 3rd International Conference on Emerging Electronics (ICEE) (pp. 1-4). Article 8074572 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ICEmElec.2016.8074572

@inproceedings{137e78391d5244c7a88f4c688283f786,

title = "Analysis and modeling of low frequency noise in presence of doping non-uniformity in MOSFETs",

abstract = "In this paper, we demonstrate using extensive TCAD simulations that low frequency noise behavior is significantly different in presence of halo implants. The study of the noise behavior is extended to source side halo, drain side halo, symmetric halos and uniformly doped devices for different doping and length of the halo regions. Our study shows that source side halo region is responsible for the anomalous noise behavior in saturation. Such noise behavior can be accurately modeled with the presented SPICE model over wide range of biases and geometries. This study physically explains the trends observed in low frequency noise measurement in advanced CMOS technologies.",

keywords = "Flicker Noise, Green Function, Halo Implants",

author = "Harshit Agarwal and Chetan Gupta and Chauhan, {Yogesh S.} and Sourabh Khandelwal and Chenming Hu and Sagnik Dey and Kaiman Chan",

year = "2017",

month = oct,

day = "18",

doi = "10.1109/ICEmElec.2016.8074572",

language = "English",

isbn = "9781509036608",

pages = "1--4",

booktitle = "2016 3rd International Conference on Emerging Electronics (ICEE)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "3rd International Conference on Emerging Electronics, ICEE 2016 ; Conference date: 27-12-2016 Through 30-12-2016",

}

Agarwal, H, Gupta, C, Chauhan, YS, Khandelwal, S, Hu, C, Dey, S & Chan, K 2017, Analysis and modeling of low frequency noise in presence of doping non-uniformity in MOSFETs. in 2016 3rd International Conference on Emerging Electronics (ICEE)., 8074572, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, USA, pp. 1-4, 3rd International Conference on Emerging Electronics, ICEE 2016, Mumbai, India, 27/12/16. https://doi.org/10.1109/ICEmElec.2016.8074572

Analysis and modeling of low frequency noise in presence of doping non-uniformity in MOSFETs. / Agarwal, Harshit; Gupta, Chetan; Chauhan, Yogesh S. et al.
2016 3rd International Conference on Emerging Electronics (ICEE). Piscataway, NJ, USA: Institute of Electrical and Electronics Engineers (IEEE), 2017. p. 1-4 8074572.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Analysis and modeling of low frequency noise in presence of doping non-uniformity in MOSFETs

AU - Agarwal, Harshit

AU - Gupta, Chetan

AU - Chauhan, Yogesh S.

AU - Khandelwal, Sourabh

AU - Hu, Chenming

AU - Dey, Sagnik

AU - Chan, Kaiman

PY - 2017/10/18

Y1 - 2017/10/18

N2 - In this paper, we demonstrate using extensive TCAD simulations that low frequency noise behavior is significantly different in presence of halo implants. The study of the noise behavior is extended to source side halo, drain side halo, symmetric halos and uniformly doped devices for different doping and length of the halo regions. Our study shows that source side halo region is responsible for the anomalous noise behavior in saturation. Such noise behavior can be accurately modeled with the presented SPICE model over wide range of biases and geometries. This study physically explains the trends observed in low frequency noise measurement in advanced CMOS technologies.

AB - In this paper, we demonstrate using extensive TCAD simulations that low frequency noise behavior is significantly different in presence of halo implants. The study of the noise behavior is extended to source side halo, drain side halo, symmetric halos and uniformly doped devices for different doping and length of the halo regions. Our study shows that source side halo region is responsible for the anomalous noise behavior in saturation. Such noise behavior can be accurately modeled with the presented SPICE model over wide range of biases and geometries. This study physically explains the trends observed in low frequency noise measurement in advanced CMOS technologies.

KW - Flicker Noise

KW - Green Function

KW - Halo Implants

UR - http://www.scopus.com/inward/record.url?scp=85039908626&partnerID=8YFLogxK

U2 - 10.1109/ICEmElec.2016.8074572

DO - 10.1109/ICEmElec.2016.8074572

M3 - Conference proceeding contribution

AN - SCOPUS:85039908626

SN - 9781509036608

SP - 1

EP - 4

BT - 2016 3rd International Conference on Emerging Electronics (ICEE)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ, USA

T2 - 3rd International Conference on Emerging Electronics, ICEE 2016

Y2 - 27 December 2016 through 30 December 2016

ER -

Analysis and modeling of low frequency noise in presence of doping non-uniformity in MOSFETs

Abstract

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this