Analysis and modeling of temperature dependence of I-V behavior in silicon carbide MOSFETs

D. Bavi; B. Brooks; S. Khandelwal

doi:10.1109/Ee53374.2021.9628349

Analysis and modeling of temperature dependence of I-V behavior in silicon carbide MOSFETs

D. Bavi, B. Brooks, S. Khandelwal

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

1 Citation (Scopus)

Abstract

In this paper, we present a physics-based simulation model for SiC MOSFETs which is vaid from -55 °C to 175 °C. Using the proposed physics-based formulation we find for the first time the variation in key device parameters with temperature from -55 °C to 175 °C. It is found that the presence of a large interface charge density affects variation of threshold voltage, and mobility of the channel region of the SiC device. The mobility and saturation velocity of the drift region varies differently with temperature as drift region is away from the interface. A good model agreement between model and measured data is obtained for full I-V plane across three temperatures.

Original language	English
Title of host publication	Proceedings of 2021 21st International Symposium on Power Electronics (Ee)
Editors	Vladimir Katić
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Number of pages	4
ISBN (Electronic)	9781665401876
ISBN (Print)	9781665401883
DOIs	https://doi.org/10.1109/Ee53374.2021.9628349
Publication status	Published - 2021
Event	21st International Symposium on Power Electronics, Ee 2021 - Novi Sad, Serbia Duration: 27 Oct 2021 → 30 Oct 2021

Conference

Conference	21st International Symposium on Power Electronics, Ee 2021
Country/Territory	Serbia
City	Novi Sad
Period	27/10/21 → 30/10/21

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10.1109/Ee53374.2021.9628349

Cite this

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title = "Analysis and modeling of temperature dependence of I-V behavior in silicon carbide MOSFETs",

abstract = "In this paper, we present a physics-based simulation model for SiC MOSFETs which is vaid from -55 °C to 175 °C. Using the proposed physics-based formulation we find for the first time the variation in key device parameters with temperature from -55 °C to 175 °C. It is found that the presence of a large interface charge density affects variation of threshold voltage, and mobility of the channel region of the SiC device. The mobility and saturation velocity of the drift region varies differently with temperature as drift region is away from the interface. A good model agreement between model and measured data is obtained for full I-V plane across three temperatures.",

author = "D. Bavi and B. Brooks and S. Khandelwal",

year = "2021",

doi = "10.1109/Ee53374.2021.9628349",

language = "English",

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editor = "Vladimir Kati{\'c}",

booktitle = "Proceedings of 2021 21st International Symposium on Power Electronics (Ee)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "21st International Symposium on Power Electronics, Ee 2021 ; Conference date: 27-10-2021 Through 30-10-2021",

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Bavi, D, Brooks, B & Khandelwal, S 2021, Analysis and modeling of temperature dependence of I-V behavior in silicon carbide MOSFETs. in V Katić (ed.), Proceedings of 2021 21st International Symposium on Power Electronics (Ee). Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, 21st International Symposium on Power Electronics, Ee 2021, Novi Sad, Serbia, 27/10/21. https://doi.org/10.1109/Ee53374.2021.9628349

Analysis and modeling of temperature dependence of I-V behavior in silicon carbide MOSFETs. / Bavi, D.; Brooks, B.; Khandelwal, S.
Proceedings of 2021 21st International Symposium on Power Electronics (Ee). ed. / Vladimir Katić. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2021.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Analysis and modeling of temperature dependence of I-V behavior in silicon carbide MOSFETs

AU - Bavi, D.

AU - Brooks, B.

AU - Khandelwal, S.

PY - 2021

Y1 - 2021

N2 - In this paper, we present a physics-based simulation model for SiC MOSFETs which is vaid from -55 °C to 175 °C. Using the proposed physics-based formulation we find for the first time the variation in key device parameters with temperature from -55 °C to 175 °C. It is found that the presence of a large interface charge density affects variation of threshold voltage, and mobility of the channel region of the SiC device. The mobility and saturation velocity of the drift region varies differently with temperature as drift region is away from the interface. A good model agreement between model and measured data is obtained for full I-V plane across three temperatures.

AB - In this paper, we present a physics-based simulation model for SiC MOSFETs which is vaid from -55 °C to 175 °C. Using the proposed physics-based formulation we find for the first time the variation in key device parameters with temperature from -55 °C to 175 °C. It is found that the presence of a large interface charge density affects variation of threshold voltage, and mobility of the channel region of the SiC device. The mobility and saturation velocity of the drift region varies differently with temperature as drift region is away from the interface. A good model agreement between model and measured data is obtained for full I-V plane across three temperatures.

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U2 - 10.1109/Ee53374.2021.9628349

DO - 10.1109/Ee53374.2021.9628349

M3 - Conference proceeding contribution

AN - SCOPUS:85123587290

SN - 9781665401883

BT - Proceedings of 2021 21st International Symposium on Power Electronics (Ee)

A2 - Katić, Vladimir

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 21st International Symposium on Power Electronics, Ee 2021

Y2 - 27 October 2021 through 30 October 2021

ER -

Analysis and modeling of temperature dependence of I-V behavior in silicon carbide MOSFETs

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