Analysis and modeling of vertical non-uniform doping in bulk MOSFETs for circuit simulation

S. Khandelwal; Y. S. Chauhan; M. A. Karim; S. Venugopalan; A. Sachid; A. Niknejad; C. Hu

doi:10.1109/ICCDCS.2012.6188935

Analysis and modeling of vertical non-uniform doping in bulk MOSFETs for circuit simulation

S. Khandelwal^*, Y. S. Chauhan, M. A. Karim, S. Venugopalan, A. Sachid, A. Niknejad, C. Hu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

5 Citations (Scopus)

Abstract

We present an efficient approach to model the effects of vertical non-uniform doping in bulk MOSFETs. The impact of vertical non-uniform doping on device characteristics is analyzed through systematic TCAD simulations. The qualitative nature of the observed effects is also confirmed by the experimental data available in the literature. A modeling methodology for these effects is developed on BSIM6 model framework. The proposed model is in good agreement with the TCAD simulations.

Original language	English
Title of host publication	ICCDCS 2012
Subtitle of host publication	Proceedings of the 8th International Caribbean Conference on Devices, Circuits and Systems
Place of Publication	Piscataway, NJ
Pages	1-5
Number of pages	5
DOIs	https://doi.org/10.1109/ICCDCS.2012.6188935
Publication status	Published - 2012
Externally published	Yes
Event	2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012 - Playa del Carmen, Mexico Duration: 14 Mar 2012 → 17 Mar 2012

Other

Other	2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012
Country/Territory	Mexico
City	Playa del Carmen
Period	14/03/12 → 17/03/12

Keywords

Body Bias Effect
BSIM6
Compact Models
Vertical Non-uniform Doping

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10.1109/ICCDCS.2012.6188935

Cite this

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title = "Analysis and modeling of vertical non-uniform doping in bulk MOSFETs for circuit simulation",

abstract = "We present an efficient approach to model the effects of vertical non-uniform doping in bulk MOSFETs. The impact of vertical non-uniform doping on device characteristics is analyzed through systematic TCAD simulations. The qualitative nature of the observed effects is also confirmed by the experimental data available in the literature. A modeling methodology for these effects is developed on BSIM6 model framework. The proposed model is in good agreement with the TCAD simulations.",

keywords = "Body Bias Effect, BSIM6, Compact Models, Vertical Non-uniform Doping",

author = "S. Khandelwal and Chauhan, {Y. S.} and Karim, {M. A.} and S. Venugopalan and A. Sachid and A. Niknejad and C. Hu",

year = "2012",

doi = "10.1109/ICCDCS.2012.6188935",

language = "English",

isbn = "9781457711169",

pages = "1--5",

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Khandelwal, S, Chauhan, YS, Karim, MA, Venugopalan, S, Sachid, A, Niknejad, A & Hu, C 2012, Analysis and modeling of vertical non-uniform doping in bulk MOSFETs for circuit simulation. in ICCDCS 2012: Proceedings of the 8th International Caribbean Conference on Devices, Circuits and Systems. Piscataway, NJ, pp. 1-5, 2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012, Playa del Carmen, Mexico, 14/03/12. https://doi.org/10.1109/ICCDCS.2012.6188935

Analysis and modeling of vertical non-uniform doping in bulk MOSFETs for circuit simulation. / Khandelwal, S.; Chauhan, Y. S.; Karim, M. A. et al.
ICCDCS 2012: Proceedings of the 8th International Caribbean Conference on Devices, Circuits and Systems. Piscataway, NJ, 2012. p. 1-5.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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AU - Khandelwal, S.

AU - Chauhan, Y. S.

AU - Karim, M. A.

AU - Venugopalan, S.

AU - Sachid, A.

AU - Niknejad, A.

AU - Hu, C.

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AB - We present an efficient approach to model the effects of vertical non-uniform doping in bulk MOSFETs. The impact of vertical non-uniform doping on device characteristics is analyzed through systematic TCAD simulations. The qualitative nature of the observed effects is also confirmed by the experimental data available in the literature. A modeling methodology for these effects is developed on BSIM6 model framework. The proposed model is in good agreement with the TCAD simulations.

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KW - BSIM6

KW - Compact Models

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DO - 10.1109/ICCDCS.2012.6188935

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Y2 - 14 March 2012 through 17 March 2012

ER -

Analysis and modeling of vertical non-uniform doping in bulk MOSFETs for circuit simulation

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Keywords

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