Analysis and modeling of vertical non-uniform doping in bulk MOSFETs for circuit simulation

S. Khandelwal*, Y. S. Chauhan, M. A. Karim, S. Venugopalan, A. Sachid, A. Niknejad, C. Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

3 Citations (Scopus)

Abstract

We present an efficient approach to model the effects of vertical non-uniform doping in bulk MOSFETs. The impact of vertical non-uniform doping on device characteristics is analyzed through systematic TCAD simulations. The qualitative nature of the observed effects is also confirmed by the experimental data available in the literature. A modeling methodology for these effects is developed on BSIM6 model framework. The proposed model is in good agreement with the TCAD simulations.

Original languageEnglish
Title of host publicationICCDCS 2012
Subtitle of host publicationProceedings of the 8th International Caribbean Conference on Devices, Circuits and Systems
Place of PublicationPiscataway, NJ
Pages1-5
Number of pages5
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012 - Playa del Carmen, Mexico
Duration: 14 Mar 201217 Mar 2012

Other

Other2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012
CountryMexico
CityPlaya del Carmen
Period14/03/1217/03/12

Keywords

  • Body Bias Effect
  • BSIM6
  • Compact Models
  • Vertical Non-uniform Doping

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