Analysis of dispersion in intermodulation distortion in GaN HEMT devices

Sayed A. Albahrani; Anthony E. Parker; Venkata Gutta

Analysis of dispersion in intermodulation distortion in GaN HEMT devices

Sayed A. Albahrani, Anthony E. Parker, Venkata Gutta

Faculty of Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

3 Citations (Scopus)

Abstract

The considerable variation in intermodulation across wide bandwidths due to trapping and self-heating mechanisms are considered here as a dispersion of linearity that is bias dependent. This is of interest to designers because the dispersion gives intermodulation a strong dependence on center and spacing of test frequencies, which requires an interpretation of intermodulation measurements and specifications across the whole signal bandwidth. Detailed intermodulation distortion and pulse measurements were performed for this study. New self-heating and trapping models are used to characterize intermodulation distortion and pulse measurements.

Original language	English
Title of host publication	Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
Editors	Masayoshi Aikawa
Place of Publication	Piscataway, N.J.
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	398-401
Number of pages	4
ISBN (Electronic)	9784902339215, 9781902339222, 9781902339221
ISBN (Print)	9781424475902
Publication status	Published - Dec 2010
Event	2010 Asia-Pacific Microwave Conference, APMC - 2010 - Yokohama, Japan Duration: 7 Dec 2010 → 10 Dec 2010

Other

Other	2010 Asia-Pacific Microwave Conference, APMC - 2010
Country/Territory	Japan
City	Yokohama
Period	7/12/10 → 10/12/10

Keywords

Charge trapping
Dispersion
GaN HEMT
Intermodulation
Self-heating

Cite this

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title = "Analysis of dispersion in intermodulation distortion in GaN HEMT devices",

abstract = "The considerable variation in intermodulation across wide bandwidths due to trapping and self-heating mechanisms are considered here as a dispersion of linearity that is bias dependent. This is of interest to designers because the dispersion gives intermodulation a strong dependence on center and spacing of test frequencies, which requires an interpretation of intermodulation measurements and specifications across the whole signal bandwidth. Detailed intermodulation distortion and pulse measurements were performed for this study. New self-heating and trapping models are used to characterize intermodulation distortion and pulse measurements.",

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author = "Albahrani, {Sayed A.} and Parker, {Anthony E.} and Venkata Gutta",

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note = "2010 Asia-Pacific Microwave Conference, APMC - 2010 ; Conference date: 07-12-2010 Through 10-12-2010",

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Albahrani, SA, Parker, AE & Gutta, V 2010, Analysis of dispersion in intermodulation distortion in GaN HEMT devices. in M Aikawa (ed.), Microwave Conference Proceedings (APMC), 2010 Asia-Pacific., 5728643, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, N.J., pp. 398-401, 2010 Asia-Pacific Microwave Conference, APMC - 2010, Yokohama, Japan, 7/12/10.

Analysis of dispersion in intermodulation distortion in GaN HEMT devices. / Albahrani, Sayed A.; Parker, Anthony E.; Gutta, Venkata.

Microwave Conference Proceedings (APMC), 2010 Asia-Pacific. ed. / Masayoshi Aikawa. Piscataway, N.J. : Institute of Electrical and Electronics Engineers (IEEE), 2010. p. 398-401 5728643.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Analysis of dispersion in intermodulation distortion in GaN HEMT devices

AU - Albahrani, Sayed A.

AU - Parker, Anthony E.

AU - Gutta, Venkata

PY - 2010/12

Y1 - 2010/12

N2 - The considerable variation in intermodulation across wide bandwidths due to trapping and self-heating mechanisms are considered here as a dispersion of linearity that is bias dependent. This is of interest to designers because the dispersion gives intermodulation a strong dependence on center and spacing of test frequencies, which requires an interpretation of intermodulation measurements and specifications across the whole signal bandwidth. Detailed intermodulation distortion and pulse measurements were performed for this study. New self-heating and trapping models are used to characterize intermodulation distortion and pulse measurements.

AB - The considerable variation in intermodulation across wide bandwidths due to trapping and self-heating mechanisms are considered here as a dispersion of linearity that is bias dependent. This is of interest to designers because the dispersion gives intermodulation a strong dependence on center and spacing of test frequencies, which requires an interpretation of intermodulation measurements and specifications across the whole signal bandwidth. Detailed intermodulation distortion and pulse measurements were performed for this study. New self-heating and trapping models are used to characterize intermodulation distortion and pulse measurements.

KW - Charge trapping

KW - Dispersion

KW - GaN HEMT

KW - Intermodulation

KW - Self-heating

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M3 - Conference proceeding contribution

AN - SCOPUS:79955722706

SN - 9781424475902

SP - 398

EP - 401

BT - Microwave Conference Proceedings (APMC), 2010 Asia-Pacific

A2 - Aikawa, Masayoshi

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, N.J.

T2 - 2010 Asia-Pacific Microwave Conference, APMC - 2010

Y2 - 7 December 2010 through 10 December 2010

ER -

Analysis of dispersion in intermodulation distortion in GaN HEMT devices

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