Analysis of dispersion in intermodulation distortion in GaN HEMT devices

Sayed A. Albahrani, Anthony E. Parker, Venkata Gutta

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

3 Citations (Scopus)

Abstract

The considerable variation in intermodulation across wide bandwidths due to trapping and self-heating mechanisms are considered here as a dispersion of linearity that is bias dependent. This is of interest to designers because the dispersion gives intermodulation a strong dependence on center and spacing of test frequencies, which requires an interpretation of intermodulation measurements and specifications across the whole signal bandwidth. Detailed intermodulation distortion and pulse measurements were performed for this study. New self-heating and trapping models are used to characterize intermodulation distortion and pulse measurements.

Original languageEnglish
Title of host publicationMicrowave Conference Proceedings (APMC), 2010 Asia-Pacific
EditorsMasayoshi Aikawa
Place of PublicationPiscataway, N.J.
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages398-401
Number of pages4
ISBN (Electronic)9784902339215, 9781902339222, 9781902339221
ISBN (Print)9781424475902
Publication statusPublished - Dec 2010
Event2010 Asia-Pacific Microwave Conference, APMC - 2010 - Yokohama, Japan
Duration: 7 Dec 201010 Dec 2010

Other

Other2010 Asia-Pacific Microwave Conference, APMC - 2010
CountryJapan
CityYokohama
Period7/12/1010/12/10

Keywords

  • Charge trapping
  • Dispersion
  • GaN HEMT
  • Intermodulation
  • Self-heating

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