Analysis of intermodulation nulling in HEMTs

Guoli Qu*, Anthony E. Parker

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

    5 Citations (Scopus)

    Abstract

    This paper examines intermodulation nulling generated by the nonlinear current voltage characteristics of HEMTs. The conditions for intermodulation cancellation in terms of the coefficients of a two-dimensional Taylor's series expansion are established and verified with measurement and simulation. Second and third-order intermodulation cancellation can be assessed by simple examination of the transconductance characteristics of the device. This permits routine selection of optional bias after characterizing the devices.

    Original languageEnglish
    Title of host publicationConference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD
    Place of PublicationPiscataway, NJ
    PublisherInstitute of Electrical and Electronics Engineers (IEEE)
    Pages227-230
    Number of pages4
    DOIs
    Publication statusPublished - 1996
    EventProceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD - Canberra, Aust
    Duration: 8 Dec 199611 Dec 1996

    Other

    OtherProceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD
    CityCanberra, Aust
    Period8/12/9611/12/96

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  • Cite this

    Qu, G., & Parker, A. E. (1996). Analysis of intermodulation nulling in HEMTs. In Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD (pp. 227-230). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/COMMAD.1996.610112