Analysis of intermodulation nulling in HEMTs

Guoli Qu; Anthony E. Parker

doi:10.1109/COMMAD.1996.610112

Analysis of intermodulation nulling in HEMTs

Guoli Qu^*, Anthony E. Parker

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

5 Citations (Scopus)

Abstract

This paper examines intermodulation nulling generated by the nonlinear current voltage characteristics of HEMTs. The conditions for intermodulation cancellation in terms of the coefficients of a two-dimensional Taylor's series expansion are established and verified with measurement and simulation. Second and third-order intermodulation cancellation can be assessed by simple examination of the transconductance characteristics of the device. This permits routine selection of optional bias after characterizing the devices.

Original language	English
Title of host publication	Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	227-230
Number of pages	4
DOIs	https://doi.org/10.1109/COMMAD.1996.610112
Publication status	Published - 1996
Event	Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD - Canberra, Aust Duration: 8 Dec 1996 → 11 Dec 1996

Other

Other	Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD
City	Canberra, Aust
Period	8/12/96 → 11/12/96

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10.1109/COMMAD.1996.610112

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@inproceedings{a3ee587bb7594fd19a01c21d0d3552eb,

title = "Analysis of intermodulation nulling in HEMTs",

abstract = "This paper examines intermodulation nulling generated by the nonlinear current voltage characteristics of HEMTs. The conditions for intermodulation cancellation in terms of the coefficients of a two-dimensional Taylor's series expansion are established and verified with measurement and simulation. Second and third-order intermodulation cancellation can be assessed by simple examination of the transconductance characteristics of the device. This permits routine selection of optional bias after characterizing the devices.",

author = "Guoli Qu and Parker, {Anthony E.}",

year = "1996",

doi = "10.1109/COMMAD.1996.610112",

language = "English",

pages = "227--230",

booktitle = "Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD ; Conference date: 08-12-1996 Through 11-12-1996",

}

Qu, G & Parker, AE 1996, Analysis of intermodulation nulling in HEMTs. in Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 227-230, Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD, Canberra, Aust, 8/12/96. https://doi.org/10.1109/COMMAD.1996.610112

Analysis of intermodulation nulling in HEMTs. / Qu, Guoli; Parker, Anthony E.
Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 1996. p. 227-230.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

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AU - Parker, Anthony E.

PY - 1996

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N2 - This paper examines intermodulation nulling generated by the nonlinear current voltage characteristics of HEMTs. The conditions for intermodulation cancellation in terms of the coefficients of a two-dimensional Taylor's series expansion are established and verified with measurement and simulation. Second and third-order intermodulation cancellation can be assessed by simple examination of the transconductance characteristics of the device. This permits routine selection of optional bias after characterizing the devices.

AB - This paper examines intermodulation nulling generated by the nonlinear current voltage characteristics of HEMTs. The conditions for intermodulation cancellation in terms of the coefficients of a two-dimensional Taylor's series expansion are established and verified with measurement and simulation. Second and third-order intermodulation cancellation can be assessed by simple examination of the transconductance characteristics of the device. This permits routine selection of optional bias after characterizing the devices.

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DO - 10.1109/COMMAD.1996.610112

M3 - Conference proceeding contribution

AN - SCOPUS:0030373969

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EP - 230

BT - Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD

Y2 - 8 December 1996 through 11 December 1996

ER -

Analysis of intermodulation nulling in HEMTs

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