Abstract
In this paper we present the analysis of optically controlled microstrip slow wave MIS (silicon oxide on silicon) structure. First, a rigorous multilayer wave analysis for the approximate parallel plate waveguide model is presented and results obtained by a complex capacitance circuit model shown to compare well in the dielectric mode to slow wave region. Next, a capacitance formulation based on the single layer reduction (SLR) method alongwith the variational method in the Fourier domain is presented to examine the actual optically controlled microstrip structure of finite conductor width.
| Original language | English |
|---|---|
| Pages (from-to) | 232-236 |
| Number of pages | 5 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 3666 |
| Publication status | Published - 1999 |
| Externally published | Yes |