Abstract
In this paper, an analytical model of threshold voltage for bulk MOSFET is developed. The model is derived from the physical charge-based core of BSIM6 MOSFET model, taking into account short channel effects, and is intended to be used in commercial SPICE simulators for operating point information. The model is validated with measurement data from IBM 90-nm technology node using various popular threshold voltage extraction techniques, and good agreement is obtained.
Original language | English |
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Article number | 7064732 |
Pages (from-to) | 240-243 |
Number of pages | 4 |
Journal | IEEE Journal of the Electron Devices Society |
Volume | 3 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1 May 2015 |
Externally published | Yes |
Keywords
- BSIM6
- MOSFET
- SPICE