Analytical modeling and experimental validation of threshold voltage in BSIM6 MOSFET model

Harshit Agarwal, Chetan Gupta, Pragya Kushwaha, Chandan Yadav, Juan P. Duarte, Sourabh Khandelwal, Chenming Hu, Yogesh S. Chauhan*

*Corresponding author for this work

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

In this paper, an analytical model of threshold voltage for bulk MOSFET is developed. The model is derived from the physical charge-based core of BSIM6 MOSFET model, taking into account short channel effects, and is intended to be used in commercial SPICE simulators for operating point information. The model is validated with measurement data from IBM 90-nm technology node using various popular threshold voltage extraction techniques, and good agreement is obtained.

Original languageEnglish
Article number7064732
Pages (from-to)240-243
Number of pages4
JournalIEEE Journal of the Electron Devices Society
Volume3
Issue number3
DOIs
Publication statusPublished - 1 May 2015
Externally publishedYes

Keywords

  • BSIM6
  • MOSFET
  • SPICE

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