Analytical modeling and experimental validation of threshold voltage in BSIM6 MOSFET model

Harshit Agarwal; Chetan Gupta; Pragya Kushwaha; Chandan Yadav; Juan P. Duarte; Sourabh Khandelwal; Chenming Hu; Yogesh S. Chauhan

doi:10.1109/JEDS.2015.2415584

Analytical modeling and experimental validation of threshold voltage in BSIM6 MOSFET model

Harshit Agarwal, Chetan Gupta, Pragya Kushwaha, Chandan Yadav, Juan P. Duarte, Sourabh Khandelwal, Chenming Hu, Yogesh S. Chauhan^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

In this paper, an analytical model of threshold voltage for bulk MOSFET is developed. The model is derived from the physical charge-based core of BSIM6 MOSFET model, taking into account short channel effects, and is intended to be used in commercial SPICE simulators for operating point information. The model is validated with measurement data from IBM 90-nm technology node using various popular threshold voltage extraction techniques, and good agreement is obtained.

Original language	English
Article number	7064732
Pages (from-to)	240-243
Number of pages	4
Journal	IEEE Journal of the Electron Devices Society
Volume	3
Issue number	3
DOIs	https://doi.org/10.1109/JEDS.2015.2415584
Publication status	Published - 1 May 2015
Externally published	Yes

Keywords

BSIM6
MOSFET
SPICE

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10.1109/JEDS.2015.2415584

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@article{eedbbcd1585f450db87c4b0b55c28183,

title = "Analytical modeling and experimental validation of threshold voltage in BSIM6 MOSFET model",

abstract = "In this paper, an analytical model of threshold voltage for bulk MOSFET is developed. The model is derived from the physical charge-based core of BSIM6 MOSFET model, taking into account short channel effects, and is intended to be used in commercial SPICE simulators for operating point information. The model is validated with measurement data from IBM 90-nm technology node using various popular threshold voltage extraction techniques, and good agreement is obtained.",

keywords = "BSIM6, MOSFET, SPICE",

author = "Harshit Agarwal and Chetan Gupta and Pragya Kushwaha and Chandan Yadav and Duarte, {Juan P.} and Sourabh Khandelwal and Chenming Hu and Chauhan, {Yogesh S.}",

year = "2015",

month = may,

day = "1",

doi = "10.1109/JEDS.2015.2415584",

language = "English",

volume = "3",

pages = "240--243",

journal = "IEEE Journal of the Electron Devices Society",

issn = "2168-6734",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

number = "3",

}

Analytical modeling and experimental validation of threshold voltage in BSIM6 MOSFET model. / Agarwal, Harshit; Gupta, Chetan; Kushwaha, Pragya; Yadav, Chandan; Duarte, Juan P.; Khandelwal, Sourabh; Hu, Chenming; Chauhan, Yogesh S.

In: IEEE Journal of the Electron Devices Society, Vol. 3, No. 3, 7064732, 01.05.2015, p. 240-243.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Analytical modeling and experimental validation of threshold voltage in BSIM6 MOSFET model

AU - Agarwal, Harshit

AU - Gupta, Chetan

AU - Kushwaha, Pragya

AU - Yadav, Chandan

AU - Duarte, Juan P.

AU - Khandelwal, Sourabh

AU - Hu, Chenming

AU - Chauhan, Yogesh S.

PY - 2015/5/1

Y1 - 2015/5/1

N2 - In this paper, an analytical model of threshold voltage for bulk MOSFET is developed. The model is derived from the physical charge-based core of BSIM6 MOSFET model, taking into account short channel effects, and is intended to be used in commercial SPICE simulators for operating point information. The model is validated with measurement data from IBM 90-nm technology node using various popular threshold voltage extraction techniques, and good agreement is obtained.

AB - In this paper, an analytical model of threshold voltage for bulk MOSFET is developed. The model is derived from the physical charge-based core of BSIM6 MOSFET model, taking into account short channel effects, and is intended to be used in commercial SPICE simulators for operating point information. The model is validated with measurement data from IBM 90-nm technology node using various popular threshold voltage extraction techniques, and good agreement is obtained.

KW - BSIM6

KW - MOSFET

KW - SPICE

UR - http://www.scopus.com/inward/record.url?scp=84928643064&partnerID=8YFLogxK

U2 - 10.1109/JEDS.2015.2415584

DO - 10.1109/JEDS.2015.2415584

M3 - Article

AN - SCOPUS:84928643064

VL - 3

SP - 240

EP - 243

JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

SN - 2168-6734

IS - 3

M1 - 7064732

ER -

Analytical modeling and experimental validation of threshold voltage in BSIM6 MOSFET model

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