Analytical modeling of flicker noise in halo implanted MOSFETs

Harshit Agarwal, Sourabh Khandelwal, Sagnik Dey, Chenming Hu, Yogesh Singh Chauhan*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


An improved analytical model for flicker noise (1/f noise) in MOSFETs is presented. Current models do not capture the effect of high-trap density in the halo regions of the devices, which leads to significantly different bias dependence of flicker noise across device geometry. The proposed model is the first compact model implementation capturing such effect and show distinct improvements over other existing noise models. The model is compatible with BSIM6, the latest industry standard model for bulk MOSFET, and is validated with measurements from 45-nm low-power CMOS technology node.

Original languageEnglish
Article number7089170
Pages (from-to)355-360
Number of pages6
JournalIEEE Journal of the Electron Devices Society
Issue number4
Publication statusPublished - 1 Jul 2015
Externally publishedYes


  • BSIM6
  • Compact Model
  • Flicker Noise
  • Halo Doping


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