Analytical modeling of flicker noise in halo implanted MOSFETs

Harshit Agarwal; Sourabh Khandelwal; Sagnik Dey; Chenming Hu; Yogesh Singh Chauhan

doi:10.1109/JEDS.2015.2424686

Analytical modeling of flicker noise in halo implanted MOSFETs

Harshit Agarwal, Sourabh Khandelwal, Sagnik Dey, Chenming Hu, Yogesh Singh Chauhan^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

An improved analytical model for flicker noise (1/f noise) in MOSFETs is presented. Current models do not capture the effect of high-trap density in the halo regions of the devices, which leads to significantly different bias dependence of flicker noise across device geometry. The proposed model is the first compact model implementation capturing such effect and show distinct improvements over other existing noise models. The model is compatible with BSIM6, the latest industry standard model for bulk MOSFET, and is validated with measurements from 45-nm low-power CMOS technology node.

Original language	English
Article number	7089170
Pages (from-to)	355-360
Number of pages	6
Journal	IEEE Journal of the Electron Devices Society
Volume	3
Issue number	4
DOIs	https://doi.org/10.1109/JEDS.2015.2424686
Publication status	Published - 1 Jul 2015
Externally published	Yes

Keywords

BSIM6
Compact Model
Flicker Noise
Halo Doping

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10.1109/JEDS.2015.2424686

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abstract = "An improved analytical model for flicker noise (1/f noise) in MOSFETs is presented. Current models do not capture the effect of high-trap density in the halo regions of the devices, which leads to significantly different bias dependence of flicker noise across device geometry. The proposed model is the first compact model implementation capturing such effect and show distinct improvements over other existing noise models. The model is compatible with BSIM6, the latest industry standard model for bulk MOSFET, and is validated with measurements from 45-nm low-power CMOS technology node.",

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AU - Chauhan, Yogesh Singh

PY - 2015/7/1

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AB - An improved analytical model for flicker noise (1/f noise) in MOSFETs is presented. Current models do not capture the effect of high-trap density in the halo regions of the devices, which leads to significantly different bias dependence of flicker noise across device geometry. The proposed model is the first compact model implementation capturing such effect and show distinct improvements over other existing noise models. The model is compatible with BSIM6, the latest industry standard model for bulk MOSFET, and is validated with measurements from 45-nm low-power CMOS technology node.

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Analytical modeling of flicker noise in halo implanted MOSFETs

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Keywords

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