Analytical modeling of surface-potential and drain current in AlGaAs/GaAs HEMT devices

S. Khandelwal*, F. M. Yigletu, B. Iñiguez, T. A. Fjeldly

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

6 Citations (Scopus)

Abstract

We present an analytical calculation for the surface-potential and a surface-potential-based drain current model in AlGaAs/GaAs HEMT devices. We have developed a precise analytical calculation for the position of the Fermi level Eƒ in these devices from a consistent solution of Schrödinger's and Poisson's equations. The accuracy of our calculation is of the order of pico-volts. Eƒ is used to define the surface-potential ψ and subsequently derive the drain current Id. Real device effects like mobility degradation, velocity-saturation, channel-length modulation and self-heating are included in the model. The model is in excellent agreement with experimental data.

Original languageEnglish
Title of host publicationProceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages183-185
Number of pages3
ISBN (Electronic)9781467323055
ISBN (Print)9781467323031
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) - , Singapore
Duration: 21 Nov 201223 Nov 2012
Conference number: 5th

Other

Other2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)
CountrySingapore
Period21/11/1223/11/12

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