Analytical modeling of surface-potential and drain current in AlGaAs/GaAs HEMT devices

S. Khandelwal; F. M. Yigletu; B. Iñiguez; T. A. Fjeldly

doi:10.1109/RFIT.2012.6401654

Analytical modeling of surface-potential and drain current in AlGaAs/GaAs HEMT devices

S. Khandelwal^*, F. M. Yigletu, B. Iñiguez, T. A. Fjeldly

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

10 Citations (Scopus)

Abstract

We present an analytical calculation for the surface-potential and a surface-potential-based drain current model in AlGaAs/GaAs HEMT devices. We have developed a precise analytical calculation for the position of the Fermi level E_ƒ in these devices from a consistent solution of Schrödinger's and Poisson's equations. The accuracy of our calculation is of the order of pico-volts. E_ƒ is used to define the surface-potential ψ and subsequently derive the drain current I_d. Real device effects like mobility degradation, velocity-saturation, channel-length modulation and self-heating are included in the model. The model is in excellent agreement with experimental data.

Original language	English
Title of host publication	Proceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	183-185
Number of pages	3
ISBN (Electronic)	9781467323055
ISBN (Print)	9781467323031
DOIs	https://doi.org/10.1109/RFIT.2012.6401654
Publication status	Published - 2012
Externally published	Yes
Event	2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) - , Singapore Duration: 21 Nov 2012 → 23 Nov 2012 Conference number: 5th

Other

Other	2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)
Country/Territory	Singapore
Period	21/11/12 → 23/11/12

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10.1109/RFIT.2012.6401654

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Khandelwal, S., Yigletu, F. M., Iñiguez, B., & Fjeldly, T. A. (2012). Analytical modeling of surface-potential and drain current in AlGaAs/GaAs HEMT devices. In Proceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) (pp. 183-185). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/RFIT.2012.6401654

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title = "Analytical modeling of surface-potential and drain current in AlGaAs/GaAs HEMT devices",

abstract = "We present an analytical calculation for the surface-potential and a surface-potential-based drain current model in AlGaAs/GaAs HEMT devices. We have developed a precise analytical calculation for the position of the Fermi level Eƒ in these devices from a consistent solution of Schr{\"o}dinger's and Poisson's equations. The accuracy of our calculation is of the order of pico-volts. Eƒ is used to define the surface-potential ψ and subsequently derive the drain current Id. Real device effects like mobility degradation, velocity-saturation, channel-length modulation and self-heating are included in the model. The model is in excellent agreement with experimental data.",

author = "S. Khandelwal and Yigletu, {F. M.} and B. I{\~n}iguez and Fjeldly, {T. A.}",

year = "2012",

doi = "10.1109/RFIT.2012.6401654",

language = "English",

isbn = "9781467323031",

pages = "183--185",

booktitle = "Proceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) ; Conference date: 21-11-2012 Through 23-11-2012",

}

Khandelwal, S, Yigletu, FM, Iñiguez, B & Fjeldly, TA 2012, Analytical modeling of surface-potential and drain current in AlGaAs/GaAs HEMT devices. in Proceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT). Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 183-185, 2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), Singapore, 21/11/12. https://doi.org/10.1109/RFIT.2012.6401654

Analytical modeling of surface-potential and drain current in AlGaAs/GaAs HEMT devices. / Khandelwal, S.; Yigletu, F. M.; Iñiguez, B. et al.
Proceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2012. p. 183-185.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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T1 - Analytical modeling of surface-potential and drain current in AlGaAs/GaAs HEMT devices

AU - Khandelwal, S.

AU - Yigletu, F. M.

AU - Iñiguez, B.

AU - Fjeldly, T. A.

N1 - Conference code: 5th

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N2 - We present an analytical calculation for the surface-potential and a surface-potential-based drain current model in AlGaAs/GaAs HEMT devices. We have developed a precise analytical calculation for the position of the Fermi level Eƒ in these devices from a consistent solution of Schrödinger's and Poisson's equations. The accuracy of our calculation is of the order of pico-volts. Eƒ is used to define the surface-potential ψ and subsequently derive the drain current Id. Real device effects like mobility degradation, velocity-saturation, channel-length modulation and self-heating are included in the model. The model is in excellent agreement with experimental data.

AB - We present an analytical calculation for the surface-potential and a surface-potential-based drain current model in AlGaAs/GaAs HEMT devices. We have developed a precise analytical calculation for the position of the Fermi level Eƒ in these devices from a consistent solution of Schrödinger's and Poisson's equations. The accuracy of our calculation is of the order of pico-volts. Eƒ is used to define the surface-potential ψ and subsequently derive the drain current Id. Real device effects like mobility degradation, velocity-saturation, channel-length modulation and self-heating are included in the model. The model is in excellent agreement with experimental data.

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M3 - Conference proceeding contribution

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EP - 185

BT - Proceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

PB - Institute of Electrical and Electronics Engineers (IEEE)

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Analytical modeling of surface-potential and drain current in AlGaAs/GaAs HEMT devices

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