Analytical modeling of surface-potential and intrinsic charges in AlGaN/GaN HEMT devices

Sourabh Khandelwal*, Yogesh Singh Chauhan, Tor A. Fjeldly

*Corresponding author for this work

Research output: Contribution to journalArticle

81 Citations (Scopus)

Abstract

A surface potential (SP)-based analytical model for intrinsic charges in AlGaN/GaN high electron mobility transistor devices is presented. We have developed a precise analytical method to calculate the Fermi-level position E f from a consistent solution of Schrodinger's and Poisson's equations in the quantum well, considering the two important energy levels. The accuracy of our E f calculation is on the order of femto-volts for the full range of bias voltage. The SP calculated from E f is used to derive an analytical model for intrinsic charges in these devices. The model is in excellent agreement with experimental data.

Original languageEnglish
Article number6280656
Pages (from-to)2856-2860
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume59
Issue number10
DOIs
Publication statusPublished - 2012
Externally publishedYes

Keywords

  • AlGaN/GaN high electron mobility transistor (HEMT)
  • compact model
  • modulation-doped field-effect transistor (MODFET)

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