A surface potential (SP)-based analytical model for intrinsic charges in AlGaN/GaN high electron mobility transistor devices is presented. We have developed a precise analytical method to calculate the Fermi-level position E f from a consistent solution of Schrodinger's and Poisson's equations in the quantum well, considering the two important energy levels. The accuracy of our E f calculation is on the order of femto-volts for the full range of bias voltage. The SP calculated from E f is used to derive an analytical model for intrinsic charges in these devices. The model is in excellent agreement with experimental data.
- AlGaN/GaN high electron mobility transistor (HEMT)
- compact model
- modulation-doped field-effect transistor (MODFET)