Analytical modeling of surface-potential and intrinsic charges in AlGaN/GaN HEMT devices

Sourabh Khandelwal; Yogesh Singh Chauhan; Tor A. Fjeldly

doi:10.1109/TED.2012.2209654

Analytical modeling of surface-potential and intrinsic charges in AlGaN/GaN HEMT devices

Sourabh Khandelwal^*, Yogesh Singh Chauhan, Tor A. Fjeldly

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

156 Citations (Scopus)

Abstract

A surface potential (SP)-based analytical model for intrinsic charges in AlGaN/GaN high electron mobility transistor devices is presented. We have developed a precise analytical method to calculate the Fermi-level position E _f from a consistent solution of Schrodinger's and Poisson's equations in the quantum well, considering the two important energy levels. The accuracy of our E _f calculation is on the order of femto-volts for the full range of bias voltage. The SP calculated from E _f is used to derive an analytical model for intrinsic charges in these devices. The model is in excellent agreement with experimental data.

Original language	English
Article number	6280656
Pages (from-to)	2856-2860
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	59
Issue number	10
DOIs	https://doi.org/10.1109/TED.2012.2209654
Publication status	Published - 2012
Externally published	Yes

Keywords

AlGaN/GaN high electron mobility transistor (HEMT)
compact model
modulation-doped field-effect transistor (MODFET)

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10.1109/TED.2012.2209654

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title = "Analytical modeling of surface-potential and intrinsic charges in AlGaN/GaN HEMT devices",

abstract = "A surface potential (SP)-based analytical model for intrinsic charges in AlGaN/GaN high electron mobility transistor devices is presented. We have developed a precise analytical method to calculate the Fermi-level position E f from a consistent solution of Schrodinger's and Poisson's equations in the quantum well, considering the two important energy levels. The accuracy of our E f calculation is on the order of femto-volts for the full range of bias voltage. The SP calculated from E f is used to derive an analytical model for intrinsic charges in these devices. The model is in excellent agreement with experimental data.",

keywords = "AlGaN/GaN high electron mobility transistor (HEMT), compact model, modulation-doped field-effect transistor (MODFET)",

author = "Sourabh Khandelwal and Chauhan, {Yogesh Singh} and Fjeldly, {Tor A.}",

year = "2012",

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AU - Khandelwal, Sourabh

AU - Chauhan, Yogesh Singh

AU - Fjeldly, Tor A.

PY - 2012

Y1 - 2012

N2 - A surface potential (SP)-based analytical model for intrinsic charges in AlGaN/GaN high electron mobility transistor devices is presented. We have developed a precise analytical method to calculate the Fermi-level position E f from a consistent solution of Schrodinger's and Poisson's equations in the quantum well, considering the two important energy levels. The accuracy of our E f calculation is on the order of femto-volts for the full range of bias voltage. The SP calculated from E f is used to derive an analytical model for intrinsic charges in these devices. The model is in excellent agreement with experimental data.

AB - A surface potential (SP)-based analytical model for intrinsic charges in AlGaN/GaN high electron mobility transistor devices is presented. We have developed a precise analytical method to calculate the Fermi-level position E f from a consistent solution of Schrodinger's and Poisson's equations in the quantum well, considering the two important energy levels. The accuracy of our E f calculation is on the order of femto-volts for the full range of bias voltage. The SP calculated from E f is used to derive an analytical model for intrinsic charges in these devices. The model is in excellent agreement with experimental data.

KW - AlGaN/GaN high electron mobility transistor (HEMT)

KW - compact model

KW - modulation-doped field-effect transistor (MODFET)

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SP - 2856

EP - 2860

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

M1 - 6280656

ER -

Analytical modeling of surface-potential and intrinsic charges in AlGaN/GaN HEMT devices

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Keywords

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