Abstract
We present an analytical calculation for surface-potential in UTBSOI MOSFETs. The developed surface-potential calculation advances the previous work in terms of computational efficiency and accuracy. The surface-potential can be calculated with independent back-gate control which is an important requirement for UTBSOI devices. The accuracy of our surface-potential calculation is of the order of nano-volts for full range of bias voltage without use of any empirical or fitting parameter.
Original language | English |
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Title of host publication | Nanotechnology 2012 |
Subtitle of host publication | Electronics, Devices, Fabrication, MEMS, Fluidics and Computational |
Place of Publication | Cambridge, Massachusettes |
Publisher | CRC Press, Taylor & Francis Group |
Pages | 780-783 |
Number of pages | 4 |
Volume | 2 |
ISBN (Print) | 9781466562752 |
Publication status | Published - 2012 |
Externally published | Yes |
Event | Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 - Santa Clara, CA, United States Duration: 18 Jun 2012 → 21 Jun 2012 |
Other
Other | Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 |
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Country/Territory | United States |
City | Santa Clara, CA |
Period | 18/06/12 → 21/06/12 |
Keywords
- Compact models
- FDSOI
- UTBSOI