Analytical surface-potential calculation in UTBSOI MOSFETs with independent back-gate control

S. Khandelwal*, Y. S. Chauhan, Darsen D. Lu, M. A. Karim, S. Venugopalan, A. Sachid, A. Niknejad, C. Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

Abstract

We present an analytical calculation for surface-potential in UTBSOI MOSFETs. The developed surface-potential calculation advances the previous work in terms of computational efficiency and accuracy. The surface-potential can be calculated with independent back-gate control which is an important requirement for UTBSOI devices. The accuracy of our surface-potential calculation is of the order of nano-volts for full range of bias voltage without use of any empirical or fitting parameter.

Original languageEnglish
Title of host publicationNanotechnology 2012
Subtitle of host publicationElectronics, Devices, Fabrication, MEMS, Fluidics and Computational
Place of PublicationCambridge, Massachusettes
PublisherCRC Press, Taylor & Francis Group
Pages780-783
Number of pages4
Volume2
ISBN (Print)9781466562752
Publication statusPublished - 2012
Externally publishedYes
EventNanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 - Santa Clara, CA, United States
Duration: 18 Jun 201221 Jun 2012

Other

OtherNanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
CountryUnited States
CitySanta Clara, CA
Period18/06/1221/06/12

Keywords

  • Compact models
  • FDSOI
  • UTBSOI

Fingerprint

Dive into the research topics of 'Analytical surface-potential calculation in UTBSOI MOSFETs with independent back-gate control'. Together they form a unique fingerprint.

Cite this