Abstract
We present an analytical calculation for surface-potential in UTBSOI MOSFETs. The developed surface-potential calculation advances the previous work in terms of computational efficiency and accuracy. The surface-potential can be calculated with independent back-gate control which is an important requirement for UTBSOI devices. The accuracy of our surface-potential calculation is of the order of nano-volts for full range of bias voltage without use of any empirical or fitting parameter.
| Original language | English |
|---|---|
| Title of host publication | Nanotechnology 2012 |
| Subtitle of host publication | Electronics, Devices, Fabrication, MEMS, Fluidics and Computational |
| Place of Publication | Cambridge, Massachusettes |
| Publisher | CRC Press, Taylor & Francis Group |
| Pages | 780-783 |
| Number of pages | 4 |
| Volume | 2 |
| ISBN (Print) | 9781466562752 |
| Publication status | Published - 2012 |
| Externally published | Yes |
| Event | Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 - Santa Clara, CA, United States Duration: 18 Jun 2012 → 21 Jun 2012 |
Other
| Other | Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 |
|---|---|
| Country/Territory | United States |
| City | Santa Clara, CA |
| Period | 18/06/12 → 21/06/12 |
Keywords
- Compact models
- FDSOI
- UTBSOI