Analytical surface-potential calculation in UTBSOI MOSFETs with independent back-gate control

S. Khandelwal; Y. S. Chauhan; Darsen D. Lu; M. A. Karim; S. Venugopalan; A. Sachid; A. Niknejad; C. Hu

Analytical surface-potential calculation in UTBSOI MOSFETs with independent back-gate control

S. Khandelwal^*, Y. S. Chauhan, Darsen D. Lu, M. A. Karim, S. Venugopalan, A. Sachid, A. Niknejad, C. Hu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

We present an analytical calculation for surface-potential in UTBSOI MOSFETs. The developed surface-potential calculation advances the previous work in terms of computational efficiency and accuracy. The surface-potential can be calculated with independent back-gate control which is an important requirement for UTBSOI devices. The accuracy of our surface-potential calculation is of the order of nano-volts for full range of bias voltage without use of any empirical or fitting parameter.

Original language	English
Title of host publication	Nanotechnology 2012
Subtitle of host publication	Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Place of Publication	Cambridge, Massachusettes
Publisher	CRC Press, Taylor & Francis Group
Pages	780-783
Number of pages	4
Volume	2
ISBN (Print)	9781466562752
Publication status	Published - 2012
Externally published	Yes
Event	Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 - Santa Clara, CA, United States Duration: 18 Jun 2012 → 21 Jun 2012

Other

Other	Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
Country/Territory	United States
City	Santa Clara, CA
Period	18/06/12 → 21/06/12

Keywords

Compact models
FDSOI
UTBSOI

Cite this

@inproceedings{1df4de2dab3d47d39e15f3fee178b308,

title = "Analytical surface-potential calculation in UTBSOI MOSFETs with independent back-gate control",

abstract = "We present an analytical calculation for surface-potential in UTBSOI MOSFETs. The developed surface-potential calculation advances the previous work in terms of computational efficiency and accuracy. The surface-potential can be calculated with independent back-gate control which is an important requirement for UTBSOI devices. The accuracy of our surface-potential calculation is of the order of nano-volts for full range of bias voltage without use of any empirical or fitting parameter.",

keywords = "Compact models, FDSOI, UTBSOI",

author = "S. Khandelwal and Chauhan, \{Y. S.\} and Lu, \{Darsen D.\} and Karim, \{M. A.\} and S. Venugopalan and A. Sachid and A. Niknejad and C. Hu",

year = "2012",

language = "English",

isbn = "9781466562752",

volume = "2",

pages = "780--783",

booktitle = "Nanotechnology 2012",

publisher = "CRC Press, Taylor \& Francis Group",

address = "United States",

note = "Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 ; Conference date: 18-06-2012 Through 21-06-2012",

}

Khandelwal, S, Chauhan, YS, Lu, DD, Karim, MA, Venugopalan, S, Sachid, A, Niknejad, A & Hu, C 2012, Analytical surface-potential calculation in UTBSOI MOSFETs with independent back-gate control. in Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational. vol. 2, CRC Press, Taylor & Francis Group, Cambridge, Massachusettes, pp. 780-783, Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012, Santa Clara, CA, United States, 18/06/12.

Analytical surface-potential calculation in UTBSOI MOSFETs with independent back-gate control. / Khandelwal, S.; Chauhan, Y. S.; Lu, Darsen D. et al.
Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational. Vol. 2 Cambridge, Massachusettes: CRC Press, Taylor & Francis Group, 2012. p. 780-783.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Analytical surface-potential calculation in UTBSOI MOSFETs with independent back-gate control

AU - Khandelwal, S.

AU - Chauhan, Y. S.

AU - Lu, Darsen D.

AU - Karim, M. A.

AU - Venugopalan, S.

AU - Sachid, A.

AU - Niknejad, A.

AU - Hu, C.

PY - 2012

Y1 - 2012

N2 - We present an analytical calculation for surface-potential in UTBSOI MOSFETs. The developed surface-potential calculation advances the previous work in terms of computational efficiency and accuracy. The surface-potential can be calculated with independent back-gate control which is an important requirement for UTBSOI devices. The accuracy of our surface-potential calculation is of the order of nano-volts for full range of bias voltage without use of any empirical or fitting parameter.

AB - We present an analytical calculation for surface-potential in UTBSOI MOSFETs. The developed surface-potential calculation advances the previous work in terms of computational efficiency and accuracy. The surface-potential can be calculated with independent back-gate control which is an important requirement for UTBSOI devices. The accuracy of our surface-potential calculation is of the order of nano-volts for full range of bias voltage without use of any empirical or fitting parameter.

KW - Compact models

KW - FDSOI

KW - UTBSOI

UR - https://www.scopus.com/pages/publications/84864953780

M3 - Conference proceeding contribution

AN - SCOPUS:84864953780

SN - 9781466562752

VL - 2

SP - 780

EP - 783

BT - Nanotechnology 2012

PB - CRC Press, Taylor & Francis Group

CY - Cambridge, Massachusettes

T2 - Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012

Y2 - 18 June 2012 through 21 June 2012

ER -

Analytical surface-potential calculation in UTBSOI MOSFETs with independent back-gate control

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