Anisotropic dry etching of boron doped single crystal CVD diamond

Johannes Enlund, Jan Isberg, Mikael Karlsson, Fredrik Nikolajeff, Jörgen Olsson, Daniel J. Twitchen

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    52 Citations (Scopus)


    Semiconducting boron doped single-crystal CVD diamond has been patterned using aluminum masks and an inductively coupled plasma (ICP) etch system. For comparison insulating HPHT diamond samples were also patterned using the same process. Diamond etch rates above 200 nm/min were obtained with an O 2/Ar discharge for a gas pressure of 2.5 mTorr using 600 W RF power. We have accomplished the fabrication of structures with a minimum feature size of 1 μm with vertical sidewalls in both CVD and HPHT diamond. The ICP etching produced smooth surfaces with a typical root-mean-square surface roughness of 3 nm. The dependence of etch rate on bias voltage was somewhat different for the two types of diamond. However, for all samples both the etch rate and anisotropy were found to improve with increasing bias voltage.

    Original languageEnglish
    Pages (from-to)1839-1842
    Number of pages4
    Issue number9
    Publication statusPublished - Aug 2005


    • Diamond
    • Doping
    • Electronic properties
    • Oxidation
    • Single crystals


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