TY - JOUR
T1 - Apparent band-gap shift in InN films grown by remote-plasma-enhanced CVD
AU - Chen, Patrick P.T.
AU - Butcher, K. Scott A.
AU - Wintrebert-Fouquet, Marie
AU - Wuhrer, Richard
AU - Phillips, Matthew R.
AU - Prince, Kathryn E.
AU - Timmers, Heiko
AU - Shrestha, Santosh K.
AU - Usher, Brian F.
PY - 2006/3/1
Y1 - 2006/3/1
N2 - The properties of indium nitride grown at various temperatures on c-plane sapphire and glass substrates, using remote plasma-enhanced chemical vapour deposition, have been investigated. The optical absorption spectra show a broad range of apparent band-gap values from approximately 2.3-0.9 eV, depending on the growth temperature. The influence of growth temperature on crystallinity, level of impurity incorporation, stoichiometry, and lattice distortion are analysed. The possible causes of the apparent band-gap shift in indium nitride are discussed.
AB - The properties of indium nitride grown at various temperatures on c-plane sapphire and glass substrates, using remote plasma-enhanced chemical vapour deposition, have been investigated. The optical absorption spectra show a broad range of apparent band-gap values from approximately 2.3-0.9 eV, depending on the growth temperature. The influence of growth temperature on crystallinity, level of impurity incorporation, stoichiometry, and lattice distortion are analysed. The possible causes of the apparent band-gap shift in indium nitride are discussed.
UR - http://www.scopus.com/inward/record.url?scp=32644439690&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2005.12.005
DO - 10.1016/j.jcrysgro.2005.12.005
M3 - Article
AN - SCOPUS:32644439690
SN - 0022-0248
VL - 288
SP - 241
EP - 246
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 2
ER -