Apparent band-gap shift in InN films grown by remote-plasma-enhanced CVD

Patrick P.T. Chen*, K. Scott A. Butcher, Marie Wintrebert-Fouquet, Richard Wuhrer, Matthew R. Phillips, Kathryn E. Prince, Heiko Timmers, Santosh K. Shrestha, Brian F. Usher

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    20 Citations (Scopus)


    The properties of indium nitride grown at various temperatures on c-plane sapphire and glass substrates, using remote plasma-enhanced chemical vapour deposition, have been investigated. The optical absorption spectra show a broad range of apparent band-gap values from approximately 2.3-0.9 eV, depending on the growth temperature. The influence of growth temperature on crystallinity, level of impurity incorporation, stoichiometry, and lattice distortion are analysed. The possible causes of the apparent band-gap shift in indium nitride are discussed.

    Original languageEnglish
    Pages (from-to)241-246
    Number of pages6
    JournalJournal of Crystal Growth
    Issue number2
    Publication statusPublished - 1 Mar 2006


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