Apparent band-gap shift in InN films grown by remote-plasma-enhanced CVD

Patrick P.T. Chen; K. Scott A. Butcher; Marie Wintrebert-Fouquet; Richard Wuhrer; Matthew R. Phillips; Kathryn E. Prince; Heiko Timmers; Santosh K. Shrestha; Brian F. Usher

doi:10.1016/j.jcrysgro.2005.12.005

Apparent band-gap shift in InN films grown by remote-plasma-enhanced CVD

Patrick P.T. Chen^*, K. Scott A. Butcher, Marie Wintrebert-Fouquet, Richard Wuhrer, Matthew R. Phillips, Kathryn E. Prince, Heiko Timmers, Santosh K. Shrestha, Brian F. Usher

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

The properties of indium nitride grown at various temperatures on c-plane sapphire and glass substrates, using remote plasma-enhanced chemical vapour deposition, have been investigated. The optical absorption spectra show a broad range of apparent band-gap values from approximately 2.3-0.9 eV, depending on the growth temperature. The influence of growth temperature on crystallinity, level of impurity incorporation, stoichiometry, and lattice distortion are analysed. The possible causes of the apparent band-gap shift in indium nitride are discussed.

Original language	English
Pages (from-to)	241-246
Number of pages	6
Journal	Journal of Crystal Growth
Volume	288
Issue number	2
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.12.005
Publication status	Published - 1 Mar 2006

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title = "Apparent band-gap shift in InN films grown by remote-plasma-enhanced CVD",

abstract = "The properties of indium nitride grown at various temperatures on c-plane sapphire and glass substrates, using remote plasma-enhanced chemical vapour deposition, have been investigated. The optical absorption spectra show a broad range of apparent band-gap values from approximately 2.3-0.9 eV, depending on the growth temperature. The influence of growth temperature on crystallinity, level of impurity incorporation, stoichiometry, and lattice distortion are analysed. The possible causes of the apparent band-gap shift in indium nitride are discussed.",

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AU - Chen, Patrick P.T.

AU - Butcher, K. Scott A.

AU - Wintrebert-Fouquet, Marie

AU - Wuhrer, Richard

AU - Phillips, Matthew R.

AU - Prince, Kathryn E.

AU - Timmers, Heiko

AU - Shrestha, Santosh K.

AU - Usher, Brian F.

PY - 2006/3/1

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N2 - The properties of indium nitride grown at various temperatures on c-plane sapphire and glass substrates, using remote plasma-enhanced chemical vapour deposition, have been investigated. The optical absorption spectra show a broad range of apparent band-gap values from approximately 2.3-0.9 eV, depending on the growth temperature. The influence of growth temperature on crystallinity, level of impurity incorporation, stoichiometry, and lattice distortion are analysed. The possible causes of the apparent band-gap shift in indium nitride are discussed.

AB - The properties of indium nitride grown at various temperatures on c-plane sapphire and glass substrates, using remote plasma-enhanced chemical vapour deposition, have been investigated. The optical absorption spectra show a broad range of apparent band-gap values from approximately 2.3-0.9 eV, depending on the growth temperature. The influence of growth temperature on crystallinity, level of impurity incorporation, stoichiometry, and lattice distortion are analysed. The possible causes of the apparent band-gap shift in indium nitride are discussed.

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DO - 10.1016/j.jcrysgro.2005.12.005

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VL - 288

SP - 241

EP - 246

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 2

ER -

Apparent band-gap shift in InN films grown by remote-plasma-enhanced CVD

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