Application of ArF excimer laser in MOCVD growth and in situ characterisation of gallium nitride

Bing Zhou*, T. L. Tansley, Xin Li, K. S. A. Butcher

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

Laser-induced chemical vapor deposition (I CVD) is an attractive technology for the growth of films on fragile and thermally sensitive substrates at low temperature. The laser may simultaneously be used as a probe, both in excitation of semiconductors for in situ photoluminescence measurements and for spectroscopic analysis of MOCVD precursor dissociation paths. This article discusses the application of an ArF excimer laser (193 nm, 6.4 eV) to growth and characterization of gallium nitride.

Original languageEnglish
Title of host publicationIEEE/LEOS 1996 Summer topical meetings
Subtitle of host publicationadvanced applications of lasers in materials and processing, digest
PublisherCoastal Education Research Foundation Inc.
Pages45-46
Number of pages2
ISBN (Print)0780331753
DOIs
Publication statusPublished - Aug 1996
EventIEEE/LEOS 1996 Summer Topical Meeting - Advanced Applications of Lasers in Materials Processing - KEYSTONE, Colombia
Duration: 5 Aug 19969 Aug 1996

Publication series

NameLEOS Summer Topical Meetings, Digest
PublisherIEEE
ISSN (Print)1099-4742

Conference

ConferenceIEEE/LEOS 1996 Summer Topical Meeting - Advanced Applications of Lasers in Materials Processing
CountryColombia
CityKEYSTONE
Period5/08/969/08/96

Fingerprint Dive into the research topics of 'Application of ArF excimer laser in MOCVD growth and in situ characterisation of gallium nitride'. Together they form a unique fingerprint.

Cite this