Application of ArF excimer laser in MOCVD growth and in situ characterisation of gallium nitride

Bing Zhou; T. L. Tansley; Xin Li; K. S. A. Butcher

doi:10.1109/LEOSST.1996.540671

Application of ArF excimer laser in MOCVD growth and in situ characterisation of gallium nitride

Bing Zhou^*, T. L. Tansley, Xin Li, K. S. A. Butcher

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

Laser-induced chemical vapor deposition (I CVD) is an attractive technology for the growth of films on fragile and thermally sensitive substrates at low temperature. The laser may simultaneously be used as a probe, both in excitation of semiconductors for in situ photoluminescence measurements and for spectroscopic analysis of MOCVD precursor dissociation paths. This article discusses the application of an ArF excimer laser (193 nm, 6.4 eV) to growth and characterization of gallium nitride.

Original language	English
Title of host publication	IEEE/LEOS 1996 Summer topical meetings
Subtitle of host publication	advanced applications of lasers in materials and processing, digest
Publisher	Coastal Education Research Foundation Inc.
Pages	45-46
Number of pages	2
ISBN (Print)	0780331753
DOIs	https://doi.org/10.1109/LEOSST.1996.540671
Publication status	Published - Aug 1996
Event	IEEE/LEOS 1996 Summer Topical Meeting - Advanced Applications of Lasers in Materials Processing - KEYSTONE, Colombia Duration: 5 Aug 1996 → 9 Aug 1996

Publication series

Name	LEOS Summer Topical Meetings, Digest
Publisher	IEEE
ISSN (Print)	1099-4742

Conference

Conference	IEEE/LEOS 1996 Summer Topical Meeting - Advanced Applications of Lasers in Materials Processing
Country/Territory	Colombia
City	KEYSTONE
Period	5/08/96 → 9/08/96

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10.1109/LEOSST.1996.540671

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Zhou, B., Tansley, T. L., Li, X., & Butcher, K. S. A. (1996). Application of ArF excimer laser in MOCVD growth and in situ characterisation of gallium nitride. In IEEE/LEOS 1996 Summer topical meetings: advanced applications of lasers in materials and processing, digest (pp. 45-46). (LEOS Summer Topical Meetings, Digest). Coastal Education Research Foundation Inc.. https://doi.org/10.1109/LEOSST.1996.540671

@inproceedings{2ce819569d394353accf7198316e2bbf,

title = "Application of ArF excimer laser in MOCVD growth and in situ characterisation of gallium nitride",

abstract = "Laser-induced chemical vapor deposition (I CVD) is an attractive technology for the growth of films on fragile and thermally sensitive substrates at low temperature. The laser may simultaneously be used as a probe, both in excitation of semiconductors for in situ photoluminescence measurements and for spectroscopic analysis of MOCVD precursor dissociation paths. This article discusses the application of an ArF excimer laser (193 nm, 6.4 eV) to growth and characterization of gallium nitride.",

author = "Bing Zhou and Tansley, {T. L.} and Xin Li and Butcher, {K. S. A.}",

year = "1996",

month = aug,

doi = "10.1109/LEOSST.1996.540671",

language = "English",

isbn = "0780331753",

series = "LEOS Summer Topical Meetings, Digest",

publisher = "Coastal Education Research Foundation Inc.",

pages = "45--46",

booktitle = "IEEE/LEOS 1996 Summer topical meetings",

address = "United States",

note = "IEEE/LEOS 1996 Summer Topical Meeting - Advanced Applications of Lasers in Materials Processing ; Conference date: 05-08-1996 Through 09-08-1996",

}

Zhou, B, Tansley, TL, Li, X & Butcher, KSA 1996, Application of ArF excimer laser in MOCVD growth and in situ characterisation of gallium nitride. in IEEE/LEOS 1996 Summer topical meetings: advanced applications of lasers in materials and processing, digest. LEOS Summer Topical Meetings, Digest, Coastal Education Research Foundation Inc., pp. 45-46, IEEE/LEOS 1996 Summer Topical Meeting - Advanced Applications of Lasers in Materials Processing, KEYSTONE, Colombia, 5/08/96. https://doi.org/10.1109/LEOSST.1996.540671

Application of ArF excimer laser in MOCVD growth and in situ characterisation of gallium nitride. / Zhou, Bing; Tansley, T. L.; Li, Xin et al.
IEEE/LEOS 1996 Summer topical meetings: advanced applications of lasers in materials and processing, digest. Coastal Education Research Foundation Inc., 1996. p. 45-46 (LEOS Summer Topical Meetings, Digest).

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Application of ArF excimer laser in MOCVD growth and in situ characterisation of gallium nitride

AU - Zhou, Bing

AU - Tansley, T. L.

AU - Li, Xin

AU - Butcher, K. S. A.

PY - 1996/8

Y1 - 1996/8

N2 - Laser-induced chemical vapor deposition (I CVD) is an attractive technology for the growth of films on fragile and thermally sensitive substrates at low temperature. The laser may simultaneously be used as a probe, both in excitation of semiconductors for in situ photoluminescence measurements and for spectroscopic analysis of MOCVD precursor dissociation paths. This article discusses the application of an ArF excimer laser (193 nm, 6.4 eV) to growth and characterization of gallium nitride.

AB - Laser-induced chemical vapor deposition (I CVD) is an attractive technology for the growth of films on fragile and thermally sensitive substrates at low temperature. The laser may simultaneously be used as a probe, both in excitation of semiconductors for in situ photoluminescence measurements and for spectroscopic analysis of MOCVD precursor dissociation paths. This article discusses the application of an ArF excimer laser (193 nm, 6.4 eV) to growth and characterization of gallium nitride.

UR - http://www.scopus.com/inward/record.url?scp=0029708175&partnerID=8YFLogxK

U2 - 10.1109/LEOSST.1996.540671

DO - 10.1109/LEOSST.1996.540671

M3 - Conference proceeding contribution

AN - SCOPUS:0029708175

SN - 0780331753

T3 - LEOS Summer Topical Meetings, Digest

SP - 45

EP - 46

BT - IEEE/LEOS 1996 Summer topical meetings

PB - Coastal Education Research Foundation Inc.

T2 - IEEE/LEOS 1996 Summer Topical Meeting - Advanced Applications of Lasers in Materials Processing

Y2 - 5 August 1996 through 9 August 1996

ER -

Zhou B, Tansley TL, Li X, Butcher KSA. Application of ArF excimer laser in MOCVD growth and in situ characterisation of gallium nitride. In IEEE/LEOS 1996 Summer topical meetings: advanced applications of lasers in materials and processing, digest. Coastal Education Research Foundation Inc. 1996. p. 45-46. (LEOS Summer Topical Meetings, Digest). doi: 10.1109/LEOSST.1996.540671

Application of ArF excimer laser in MOCVD growth and in situ characterisation of gallium nitride

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