Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation

Syuto Tamura; Godai Koike; Akira Komatsubara; Tokuyuki Teraji; Shinobu Onoda; Liam P. McGuinness; Lachlan Rogers; Boris Naydenov; E. Wu; Liu Yan; Fedor Jelezko; Takeshi Ohshima; Junichi Isoya; Takahiro Shinada; Takashi Tanii

doi:10.7567/APEX.7.115201

Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation

Syuto Tamura, Godai Koike, Akira Komatsubara, Tokuyuki Teraji, Shinobu Onoda, Liam P. McGuinness, Lachlan Rogers, Boris Naydenov, E. Wu, Liu Yan, Fedor Jelezko, Takeshi Ohshima, Junichi Isoya, Takahiro Shinada, Takashi Tanii

Research output: Contribution to journal › Article › peer-review

69 Citations (Scopus)

Abstract

Among promising color centers for single-photon sources in diamond, the negatively charged silicon-vacancy (SiV%) has 70% of its emission to the zero-phonon line (ZPL), in contrast to the negatively charged nitrogen vacancy (NV^-), which has a broad spectrum. Fabricating single centers of useful defect complexes with high yield and excellent grown-in defect properties by ion implantation has proven to be challenging. We have fabricated bright single SiV^- centers by 60-keV focused ion beam implantation and subsequent annealing at 1000 °C with high positioning accuracy and a high yield of 15%.

Original language	English
Article number	115201
Number of pages	4
Journal	Applied Physics Express
Volume	7
Issue number	11
DOIs	https://doi.org/10.7567/APEX.7.115201
Publication status	Published - 1 Nov 2014
Externally published	Yes

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Tamura, S., Koike, G., Komatsubara, A., Teraji, T., Onoda, S., McGuinness, L. P., Rogers, L., Naydenov, B., Wu, E., Yan, L., Jelezko, F., Ohshima, T., Isoya, J., Shinada, T., & Tanii, T. (2014). Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation. Applied Physics Express, 7(11), [115201]. https://doi.org/10.7567/APEX.7.115201

Tamura, Syuto ; Koike, Godai ; Komatsubara, Akira ; Teraji, Tokuyuki ; Onoda, Shinobu ; McGuinness, Liam P. ; Rogers, Lachlan ; Naydenov, Boris ; Wu, E. ; Yan, Liu ; Jelezko, Fedor ; Ohshima, Takeshi ; Isoya, Junichi ; Shinada, Takahiro ; Tanii, Takashi. / Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation. In: Applied Physics Express. 2014 ; Vol. 7, No. 11.

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title = "Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation",

abstract = "Among promising color centers for single-photon sources in diamond, the negatively charged silicon-vacancy (SiV%) has 70% of its emission to the zero-phonon line (ZPL), in contrast to the negatively charged nitrogen vacancy (NV-), which has a broad spectrum. Fabricating single centers of useful defect complexes with high yield and excellent grown-in defect properties by ion implantation has proven to be challenging. We have fabricated bright single SiV- centers by 60-keV focused ion beam implantation and subsequent annealing at 1000 °C with high positioning accuracy and a high yield of 15%.",

author = "Syuto Tamura and Godai Koike and Akira Komatsubara and Tokuyuki Teraji and Shinobu Onoda and McGuinness, {Liam P.} and Lachlan Rogers and Boris Naydenov and E. Wu and Liu Yan and Fedor Jelezko and Takeshi Ohshima and Junichi Isoya and Takahiro Shinada and Takashi Tanii",

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doi = "10.7567/APEX.7.115201",

language = "English",

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Tamura, S, Koike, G, Komatsubara, A, Teraji, T, Onoda, S, McGuinness, LP, Rogers, L, Naydenov, B, Wu, E, Yan, L, Jelezko, F, Ohshima, T, Isoya, J, Shinada, T & Tanii, T 2014, 'Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation', Applied Physics Express, vol. 7, no. 11, 115201. https://doi.org/10.7567/APEX.7.115201

Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation. / Tamura, Syuto; Koike, Godai; Komatsubara, Akira; Teraji, Tokuyuki; Onoda, Shinobu; McGuinness, Liam P.; Rogers, Lachlan; Naydenov, Boris; Wu, E.; Yan, Liu; Jelezko, Fedor; Ohshima, Takeshi; Isoya, Junichi; Shinada, Takahiro; Tanii, Takashi.

In: Applied Physics Express, Vol. 7, No. 11, 115201, 01.11.2014.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation

AU - Tamura, Syuto

AU - Koike, Godai

AU - Komatsubara, Akira

AU - Teraji, Tokuyuki

AU - Onoda, Shinobu

AU - McGuinness, Liam P.

AU - Rogers, Lachlan

AU - Naydenov, Boris

AU - Wu, E.

AU - Yan, Liu

AU - Jelezko, Fedor

AU - Ohshima, Takeshi

AU - Isoya, Junichi

AU - Shinada, Takahiro

AU - Tanii, Takashi

PY - 2014/11/1

Y1 - 2014/11/1

N2 - Among promising color centers for single-photon sources in diamond, the negatively charged silicon-vacancy (SiV%) has 70% of its emission to the zero-phonon line (ZPL), in contrast to the negatively charged nitrogen vacancy (NV-), which has a broad spectrum. Fabricating single centers of useful defect complexes with high yield and excellent grown-in defect properties by ion implantation has proven to be challenging. We have fabricated bright single SiV- centers by 60-keV focused ion beam implantation and subsequent annealing at 1000 °C with high positioning accuracy and a high yield of 15%.

AB - Among promising color centers for single-photon sources in diamond, the negatively charged silicon-vacancy (SiV%) has 70% of its emission to the zero-phonon line (ZPL), in contrast to the negatively charged nitrogen vacancy (NV-), which has a broad spectrum. Fabricating single centers of useful defect complexes with high yield and excellent grown-in defect properties by ion implantation has proven to be challenging. We have fabricated bright single SiV- centers by 60-keV focused ion beam implantation and subsequent annealing at 1000 °C with high positioning accuracy and a high yield of 15%.

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JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

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Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation

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