ASM GaN: industry standard model for GaN RF and power devices - part 1: DC, CV, and RF model

Sourabh Khandelwal; Yogesh Singh Chauhan; Tor A. Fjeldly; Sudip Ghosh; Ahtisham Pampori; Dhawal Mahajan; Raghvendra Dangi; Sheikh Aamir Ahsan

doi:10.1109/TED.2018.2867874

ASM GaN: industry standard model for GaN RF and power devices - part 1: DC, CV, and RF model

Sourabh Khandelwal^*, Yogesh Singh Chauhan, Tor A. Fjeldly, Sudip Ghosh, Ahtisham Pampori, Dhawal Mahajan, Raghvendra Dangi, Sheikh Aamir Ahsan

^*Corresponding author for this work

School of Engineering

Research output: Contribution to journal › Article › peer-review

113 Citations (Scopus)

Abstract

We present the latest developments in Advance SPICE Model for GaN (ASM GaN) HEMTs in this paper. The ASM GaN model has been recently selected as an industry-standard compact model for GaN radio frequency (RF) and power devices. The core surface-potential calculation and the modeling of real device effects in this model are presented. We discuss the details of the nonlinear access region model and enhancement in this model to include a physical dependence on barrier thickness. We also present the novel model feature of configurable field-plate modeling and discuss the extraction procedure for the same. New results with the ASM GaN model on high-frequency and enhancement-mode GaN power devices are also presented.

Original language	English
Pages (from-to)	80-86
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	66
Issue number	1
DOIs	https://doi.org/10.1109/TED.2018.2867874
Publication status	Published - Jan 2019

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title = "ASM GaN: industry standard model for GaN RF and power devices - part 1: DC, CV, and RF model",

abstract = "We present the latest developments in Advance SPICE Model for GaN (ASM GaN) HEMTs in this paper. The ASM GaN model has been recently selected as an industry-standard compact model for GaN radio frequency (RF) and power devices. The core surface-potential calculation and the modeling of real device effects in this model are presented. We discuss the details of the nonlinear access region model and enhancement in this model to include a physical dependence on barrier thickness. We also present the novel model feature of configurable field-plate modeling and discuss the extraction procedure for the same. New results with the ASM GaN model on high-frequency and enhancement-mode GaN power devices are also presented.",

author = "Sourabh Khandelwal and Chauhan, {Yogesh Singh} and Fjeldly, {Tor A.} and Sudip Ghosh and Ahtisham Pampori and Dhawal Mahajan and Raghvendra Dangi and Ahsan, {Sheikh Aamir}",

year = "2019",

month = jan,

doi = "10.1109/TED.2018.2867874",

language = "English",

volume = "66",

pages = "80--86",

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T2 - industry standard model for GaN RF and power devices - part 1: DC, CV, and RF model

AU - Khandelwal, Sourabh

AU - Chauhan, Yogesh Singh

AU - Fjeldly, Tor A.

AU - Ghosh, Sudip

AU - Pampori, Ahtisham

AU - Mahajan, Dhawal

AU - Dangi, Raghvendra

AU - Ahsan, Sheikh Aamir

PY - 2019/1

Y1 - 2019/1

N2 - We present the latest developments in Advance SPICE Model for GaN (ASM GaN) HEMTs in this paper. The ASM GaN model has been recently selected as an industry-standard compact model for GaN radio frequency (RF) and power devices. The core surface-potential calculation and the modeling of real device effects in this model are presented. We discuss the details of the nonlinear access region model and enhancement in this model to include a physical dependence on barrier thickness. We also present the novel model feature of configurable field-plate modeling and discuss the extraction procedure for the same. New results with the ASM GaN model on high-frequency and enhancement-mode GaN power devices are also presented.

AB - We present the latest developments in Advance SPICE Model for GaN (ASM GaN) HEMTs in this paper. The ASM GaN model has been recently selected as an industry-standard compact model for GaN radio frequency (RF) and power devices. The core surface-potential calculation and the modeling of real device effects in this model are presented. We discuss the details of the nonlinear access region model and enhancement in this model to include a physical dependence on barrier thickness. We also present the novel model feature of configurable field-plate modeling and discuss the extraction procedure for the same. New results with the ASM GaN model on high-frequency and enhancement-mode GaN power devices are also presented.

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DO - 10.1109/TED.2018.2867874

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JO - IEEE Transactions on Electron Devices

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ASM GaN: industry standard model for GaN RF and power devices - part 1: DC, CV, and RF model

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