ASM GaN

industry standard model for GaN RF and power devices - part 1: DC, CV, and RF model

Sourabh Khandelwal*, Yogesh Singh Chauhan, Tor A. Fjeldly, Sudip Ghosh, Ahtisham Pampori, Dhawal Mahajan, Raghvendra Dangi, Sheikh Aamir Ahsan

*Corresponding author for this work

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We present the latest developments in Advance SPICE Model for GaN (ASM GaN) HEMTs in this paper. The ASM GaN model has been recently selected as an industry-standard compact model for GaN radio frequency (RF) and power devices. The core surface-potential calculation and the modeling of real device effects in this model are presented. We discuss the details of the nonlinear access region model and enhancement in this model to include a physical dependence on barrier thickness. We also present the novel model feature of configurable field-plate modeling and discuss the extraction procedure for the same. New results with the ASM GaN model on high-frequency and enhancement-mode GaN power devices are also presented.

Original languageEnglish
Pages (from-to)80-86
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume66
Issue number1
DOIs
Publication statusPublished - Jan 2019

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