Abstract
In this paper, we aim to present the Advances Spice Model for High Electron Mobility Transistors (ASM-HEMT). The model is currently being considered in the second phase of industry standardization by the Compact Model Coalition (CMC). The presented physical model is surface potential based and is computationally efficient by virtue of being completely analytical. It includes velocity saturation effects, access region resistance effects, DIBL, temperature dependance and models for gate current and noise. The model has been rigorously tested on measured data, and shows good match.
Original language | English |
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Title of host publication | EDSSC 2015 |
Subtitle of host publication | Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits |
Place of Publication | Singapore |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 495-498 |
Number of pages | 4 |
ISBN (Electronic) | 9781479983636 |
DOIs | |
Publication status | Published - 30 Sept 2015 |
Externally published | Yes |
Event | 11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015 - Singapore, Singapore Duration: 1 Jun 2015 → 4 Jun 2015 |
Other
Other | 11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015 |
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Country/Territory | Singapore |
City | Singapore |
Period | 1/06/15 → 4/06/15 |
Keywords
- compact model
- GaN
- gate current
- HEMT
- noise