ASM-HEMT

Compact model for GaN HEMTs

Avirup Dasgupta, Sudip Ghosh, Yogesh Singh Chauhan, Sourabh Khandelwal

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

10 Citations (Scopus)

Abstract

In this paper, we aim to present the Advances Spice Model for High Electron Mobility Transistors (ASM-HEMT). The model is currently being considered in the second phase of industry standardization by the Compact Model Coalition (CMC). The presented physical model is surface potential based and is computationally efficient by virtue of being completely analytical. It includes velocity saturation effects, access region resistance effects, DIBL, temperature dependance and models for gate current and noise. The model has been rigorously tested on measured data, and shows good match.

Original languageEnglish
Title of host publicationEDSSC 2015
Subtitle of host publicationProceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits
Place of PublicationSingapore
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages495-498
Number of pages4
ISBN (Electronic)9781479983636
DOIs
Publication statusPublished - 30 Sep 2015
Externally publishedYes
Event11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015 - Singapore, Singapore
Duration: 1 Jun 20154 Jun 2015

Other

Other11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015
CountrySingapore
CitySingapore
Period1/06/154/06/15

Keywords

  • compact model
  • GaN
  • gate current
  • HEMT
  • noise

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