ASM-HEMT: Compact model for GaN HEMTs

Avirup Dasgupta; Sudip Ghosh; Yogesh Singh Chauhan; Sourabh Khandelwal

doi:10.1109/EDSSC.2015.7285159

ASM-HEMT

Compact model for GaN HEMTs

Avirup Dasgupta, Sudip Ghosh, Yogesh Singh Chauhan, Sourabh Khandelwal

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

10 Citations (Scopus)

Abstract

In this paper, we aim to present the Advances Spice Model for High Electron Mobility Transistors (ASM-HEMT). The model is currently being considered in the second phase of industry standardization by the Compact Model Coalition (CMC). The presented physical model is surface potential based and is computationally efficient by virtue of being completely analytical. It includes velocity saturation effects, access region resistance effects, DIBL, temperature dependance and models for gate current and noise. The model has been rigorously tested on measured data, and shows good match.

Original language	English
Title of host publication	EDSSC 2015
Subtitle of host publication	Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits
Place of Publication	Singapore
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	495-498
Number of pages	4
ISBN (Electronic)	9781479983636
DOIs	https://doi.org/10.1109/EDSSC.2015.7285159
Publication status	Published - 30 Sep 2015
Externally published	Yes
Event	11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015 - Singapore, Singapore Duration: 1 Jun 2015 → 4 Jun 2015

Other

Other	11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015
Country	Singapore
City	Singapore
Period	1/06/15 → 4/06/15

Keywords

compact model
GaN
gate current
HEMT
noise

Access to Document

10.1109/EDSSC.2015.7285159

Link to publication in Scopus

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Cite this

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title = "ASM-HEMT: Compact model for GaN HEMTs",

abstract = "In this paper, we aim to present the Advances Spice Model for High Electron Mobility Transistors (ASM-HEMT). The model is currently being considered in the second phase of industry standardization by the Compact Model Coalition (CMC). The presented physical model is surface potential based and is computationally efficient by virtue of being completely analytical. It includes velocity saturation effects, access region resistance effects, DIBL, temperature dependance and models for gate current and noise. The model has been rigorously tested on measured data, and shows good match.",

keywords = "compact model, GaN, gate current, HEMT, noise",

author = "Avirup Dasgupta and Sudip Ghosh and Chauhan, {Yogesh Singh} and Sourabh Khandelwal",

year = "2015",

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doi = "10.1109/EDSSC.2015.7285159",

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Dasgupta, A, Ghosh, S, Chauhan, YS & Khandelwal, S 2015, ASM-HEMT: Compact model for GaN HEMTs. in EDSSC 2015: Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits. Institute of Electrical and Electronics Engineers (IEEE), Singapore, pp. 495-498, 11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015, Singapore, Singapore, 1/06/15. https://doi.org/10.1109/EDSSC.2015.7285159

ASM-HEMT : Compact model for GaN HEMTs. / Dasgupta, Avirup; Ghosh, Sudip; Chauhan, Yogesh Singh; Khandelwal, Sourabh.

EDSSC 2015: Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits. Singapore : Institute of Electrical and Electronics Engineers (IEEE), 2015. p. 495-498.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

TY - GEN

T1 - ASM-HEMT

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