Assessing the effects of field plates in an AlGaN/GaN-on-SiC HEMT model extraction

Bryan K. Schwitter, Jabra Tarazi, Anthony E. Parker, Simon J. Mahon

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review


The contributions of gate-connected and source-connected field plates to extracted device capacitances (gate-source, gate-drain and drain-source capacitance) are assessed during the development of an AlGaN/GaN-on-SiC HEMT model. The capacitances due to the presence of a gate field plate are observed to be intrinsic in nature, while those associated with a source-connected field plate can be regarded as extrinsic. Close agreement is observed between measurement and simulation of S-parameters using a device model which considers the individual effects of the field plates.

Original languageEnglish
Title of host publicationAMS 2014 - 2014 1st Australian Microwave Symposium, Conference Proceedings
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages2
ISBN (Electronic)9781479955411
Publication statusPublished - 20 Jan 2014
Event1st Australian Microwave Symposium AMS - Melbourne, Australia
Duration: 26 Jun 201427 Jun 2014


Conference1st Australian Microwave Symposium AMS


Dive into the research topics of 'Assessing the effects of field plates in an AlGaN/GaN-on-SiC HEMT model extraction'. Together they form a unique fingerprint.

Cite this