Abstract
The contributions of gate-connected and source-connected field plates to extracted device capacitances (gate-source, gate-drain and drain-source capacitance) are assessed during the development of an AlGaN/GaN-on-SiC HEMT model. The capacitances due to the presence of a gate field plate are observed to be intrinsic in nature, while those associated with a source-connected field plate can be regarded as extrinsic. Close agreement is observed between measurement and simulation of S-parameters using a device model which considers the individual effects of the field plates.
Original language | English |
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Title of host publication | AMS 2014 - 2014 1st Australian Microwave Symposium, Conference Proceedings |
Place of Publication | Piscataway, NJ |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 17-18 |
Number of pages | 2 |
ISBN (Electronic) | 9781479955411 |
DOIs | |
Publication status | Published - 20 Jan 2014 |
Event | 1st Australian Microwave Symposium AMS - Melbourne, Australia Duration: 26 Jun 2014 → 27 Jun 2014 |
Conference
Conference | 1st Australian Microwave Symposium AMS |
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Country/Territory | Australia |
City | Melbourne |
Period | 26/06/14 → 27/06/14 |