Abstract
We have experimentally investigated the threshold voltage shift due to negative bias temperature instability (NBTI). The NBTI stress in the absence of self-heating (SH) is performed at two different temperatures, i.e., T = 25°C and 125°C, at bias conditions: gate voltage Vgs = -2 V and drain voltage Vds = 0 V. To evaluate the effect of NBTI in the presence of SH, the stress is performed at room temperature and at Vgs = -2 V and Vds = -1 V. It has been observed that NBTI in the presence of SH causes a significant shift in the threshold voltage.
Original language | English |
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Pages (from-to) | 1532-1534 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 33 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2012 |
Externally published | Yes |
Keywords
- FinFET
- negative bias temperature instability (NBTI)
- reliability
- self-heating (SH)
- silicon-on-insulator (SOI)
- thermal resistance