Assessment of NBTI in presence of self-heating in high-k SOI FinFETs

Udit Monga, Sourabh Khandelwal, Jasmin Aghassi, Josef Sedlmeir, Tor A. Fjeldly

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

We have experimentally investigated the threshold voltage shift due to negative bias temperature instability (NBTI). The NBTI stress in the absence of self-heating (SH) is performed at two different temperatures, i.e., T = 25°C and 125°C, at bias conditions: gate voltage Vgs = -2 V and drain voltage Vds = 0 V. To evaluate the effect of NBTI in the presence of SH, the stress is performed at room temperature and at Vgs = -2 V and Vds = -1 V. It has been observed that NBTI in the presence of SH causes a significant shift in the threshold voltage.
Original languageEnglish
Pages (from-to)1532-1534
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number11
DOIs
Publication statusPublished - 2012
Externally publishedYes

Keywords

  • FinFET
  • negative bias temperature instability (NBTI)
  • reliability
  • self-heating (SH)
  • silicon-on-insulator (SOI)
  • thermal resistance

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