TY - JOUR
T1 - Atmospheric pressure chemical vapor deposition growth window for undoped gallium antimonide
AU - Subekti, A.
AU - Goldys, E. M.
AU - Paterson, Melissa J.
AU - Drozdowicz-Tomsia, K.
AU - Tansley, T. L.
PY - 1999/4
Y1 - 1999/4
N2 - Metalorganic chemical vapor deposition (MOCVD) GaSb growth using trimethylgallium and trimethylantimony as a function of substrate temperature and V/III ratio was examined. These parameters were found to have a significant effect on the growth rate and surface morphology of the GaSb films. A phase diagram is used to interpret the effect of these growth parameters on the GaSb film growth. The region of single-phase growth was found to be narrow, falling between 540 and 560 °C. The optimum growth conditions for the MOCVD growth of GaSb have been determined for a TMGa flow rate of 20 sccm and a carrier gas flow of 8 1/min. The optimum substrate temperature and V/III ratio were found to be 540 °C and 0.72, respectively. In these conditions the lowest hole concentration of 5 × 1016 cm-3 and the highest room temperature mobility of 500 cm2 V-1 s-3 were achieved, accompanied by a steep, well-resolved band edge at 0.72 eV.
AB - Metalorganic chemical vapor deposition (MOCVD) GaSb growth using trimethylgallium and trimethylantimony as a function of substrate temperature and V/III ratio was examined. These parameters were found to have a significant effect on the growth rate and surface morphology of the GaSb films. A phase diagram is used to interpret the effect of these growth parameters on the GaSb film growth. The region of single-phase growth was found to be narrow, falling between 540 and 560 °C. The optimum growth conditions for the MOCVD growth of GaSb have been determined for a TMGa flow rate of 20 sccm and a carrier gas flow of 8 1/min. The optimum substrate temperature and V/III ratio were found to be 540 °C and 0.72, respectively. In these conditions the lowest hole concentration of 5 × 1016 cm-3 and the highest room temperature mobility of 500 cm2 V-1 s-3 were achieved, accompanied by a steep, well-resolved band edge at 0.72 eV.
UR - http://www.scopus.com/inward/record.url?scp=0032634881&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0032634881
SN - 0884-2914
VL - 14
SP - 1238
EP - 1245
JO - Journal of Materials Research
JF - Journal of Materials Research
IS - 4
ER -