Atmospheric pressure chemical vapor deposition growth window for undoped gallium antimonide

A. Subekti; E. M. Goldys; Melissa J. Paterson; K. Drozdowicz-Tomsia; T. L. Tansley

Atmospheric pressure chemical vapor deposition growth window for undoped gallium antimonide

A. Subekti^*, E. M. Goldys, Melissa J. Paterson, K. Drozdowicz-Tomsia, T. L. Tansley

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Metalorganic chemical vapor deposition (MOCVD) GaSb growth using trimethylgallium and trimethylantimony as a function of substrate temperature and V/III ratio was examined. These parameters were found to have a significant effect on the growth rate and surface morphology of the GaSb films. A phase diagram is used to interpret the effect of these growth parameters on the GaSb film growth. The region of single-phase growth was found to be narrow, falling between 540 and 560 °C. The optimum growth conditions for the MOCVD growth of GaSb have been determined for a TMGa flow rate of 20 sccm and a carrier gas flow of 8 1/min. The optimum substrate temperature and V/III ratio were found to be 540 °C and 0.72, respectively. In these conditions the lowest hole concentration of 5 × 10¹⁶ cm^-3 and the highest room temperature mobility of 500 cm² V^-1 s^-3 were achieved, accompanied by a steep, well-resolved band edge at 0.72 eV.

Original language	English
Pages (from-to)	1238-1245
Number of pages	8
Journal	Journal of Materials Research
Volume	14
Issue number	4
Publication status	Published - Apr 1999

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@article{0ad306996a85462eae82dd33a0c85eab,

title = "Atmospheric pressure chemical vapor deposition growth window for undoped gallium antimonide",

abstract = "Metalorganic chemical vapor deposition (MOCVD) GaSb growth using trimethylgallium and trimethylantimony as a function of substrate temperature and V/III ratio was examined. These parameters were found to have a significant effect on the growth rate and surface morphology of the GaSb films. A phase diagram is used to interpret the effect of these growth parameters on the GaSb film growth. The region of single-phase growth was found to be narrow, falling between 540 and 560 °C. The optimum growth conditions for the MOCVD growth of GaSb have been determined for a TMGa flow rate of 20 sccm and a carrier gas flow of 8 1/min. The optimum substrate temperature and V/III ratio were found to be 540 °C and 0.72, respectively. In these conditions the lowest hole concentration of 5 × 1016 cm-3 and the highest room temperature mobility of 500 cm2 V-1 s-3 were achieved, accompanied by a steep, well-resolved band edge at 0.72 eV.",

author = "A. Subekti and Goldys, {E. M.} and Paterson, {Melissa J.} and K. Drozdowicz-Tomsia and Tansley, {T. L.}",

year = "1999",

month = apr,

language = "English",

volume = "14",

pages = "1238--1245",

journal = "Journal of Materials Research",

issn = "0884-2914",

publisher = "Materials Research Society",

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TY - JOUR

T1 - Atmospheric pressure chemical vapor deposition growth window for undoped gallium antimonide

AU - Subekti, A.

AU - Goldys, E. M.

AU - Paterson, Melissa J.

AU - Drozdowicz-Tomsia, K.

AU - Tansley, T. L.

PY - 1999/4

Y1 - 1999/4

N2 - Metalorganic chemical vapor deposition (MOCVD) GaSb growth using trimethylgallium and trimethylantimony as a function of substrate temperature and V/III ratio was examined. These parameters were found to have a significant effect on the growth rate and surface morphology of the GaSb films. A phase diagram is used to interpret the effect of these growth parameters on the GaSb film growth. The region of single-phase growth was found to be narrow, falling between 540 and 560 °C. The optimum growth conditions for the MOCVD growth of GaSb have been determined for a TMGa flow rate of 20 sccm and a carrier gas flow of 8 1/min. The optimum substrate temperature and V/III ratio were found to be 540 °C and 0.72, respectively. In these conditions the lowest hole concentration of 5 × 1016 cm-3 and the highest room temperature mobility of 500 cm2 V-1 s-3 were achieved, accompanied by a steep, well-resolved band edge at 0.72 eV.

AB - Metalorganic chemical vapor deposition (MOCVD) GaSb growth using trimethylgallium and trimethylantimony as a function of substrate temperature and V/III ratio was examined. These parameters were found to have a significant effect on the growth rate and surface morphology of the GaSb films. A phase diagram is used to interpret the effect of these growth parameters on the GaSb film growth. The region of single-phase growth was found to be narrow, falling between 540 and 560 °C. The optimum growth conditions for the MOCVD growth of GaSb have been determined for a TMGa flow rate of 20 sccm and a carrier gas flow of 8 1/min. The optimum substrate temperature and V/III ratio were found to be 540 °C and 0.72, respectively. In these conditions the lowest hole concentration of 5 × 1016 cm-3 and the highest room temperature mobility of 500 cm2 V-1 s-3 were achieved, accompanied by a steep, well-resolved band edge at 0.72 eV.

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