Atmospheric pressure chemical vapor deposition growth window for undoped gallium antimonide

A. Subekti*, E. M. Goldys, Melissa J. Paterson, K. Drozdowicz-Tomsia, T. L. Tansley

*Corresponding author for this work

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9 Citations (Scopus)

Abstract

Metalorganic chemical vapor deposition (MOCVD) GaSb growth using trimethylgallium and trimethylantimony as a function of substrate temperature and V/III ratio was examined. These parameters were found to have a significant effect on the growth rate and surface morphology of the GaSb films. A phase diagram is used to interpret the effect of these growth parameters on the GaSb film growth. The region of single-phase growth was found to be narrow, falling between 540 and 560 °C. The optimum growth conditions for the MOCVD growth of GaSb have been determined for a TMGa flow rate of 20 sccm and a carrier gas flow of 8 1/min. The optimum substrate temperature and V/III ratio were found to be 540 °C and 0.72, respectively. In these conditions the lowest hole concentration of 5 × 1016 cm-3 and the highest room temperature mobility of 500 cm2 V-1 s-3 were achieved, accompanied by a steep, well-resolved band edge at 0.72 eV.

Original languageEnglish
Pages (from-to)1238-1245
Number of pages8
JournalJournal of Materials Research
Volume14
Issue number4
Publication statusPublished - Apr 1999

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    Subekti, A., Goldys, E. M., Paterson, M. J., Drozdowicz-Tomsia, K., & Tansley, T. L. (1999). Atmospheric pressure chemical vapor deposition growth window for undoped gallium antimonide. Journal of Materials Research, 14(4), 1238-1245.