Atomic layer deposition of thin films of ZnSe - Structural and optical characterization

E. Guziewicz*, M. Godlewski, K. Kopalko, E. Łusakowska, E. Dynowska, M. Guziewicz, M. M. Godlewski, M. Phillips

*Corresponding author for this work

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

Thin films of sphalerite-type ZnSe were grown by atomic layer deposition (ALD) from elemental Zn and Se precursors. These films, grown on various substrates, show bright blue 'edge' emission accompanied by donor-acceptor pair emissions in the blue, green and red spectral regions. Red, green and blue emissions mixed together give a white color, with a color temperature between 2400 and 4500 K depending on a layer thickness and temperature. ZnSe grown by ALD is in consequence a promising material for the fabrication of semiconductor-based white light emitting thin film electroluminescence displays.

Original languageEnglish
Pages (from-to)172-177
Number of pages6
JournalThin Solid Films
Volume446
Issue number2
DOIs
Publication statusPublished - 15 Jan 2004

Keywords

  • Atomic layer deposition
  • Cathodoluminescence
  • Zinc selenide

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    Guziewicz, E., Godlewski, M., Kopalko, K., Łusakowska, E., Dynowska, E., Guziewicz, M., ... Phillips, M. (2004). Atomic layer deposition of thin films of ZnSe - Structural and optical characterization. Thin Solid Films, 446(2), 172-177. https://doi.org/10.1016/j.tsf.2003.09.041