Atomic layer epitaxy of ZnO for substrates for GaN epitaxy

M. Godlewski, A. Szczerbakow, K. Kopalko, E. Lusakowska, K. S A Butcher, E. M. Goldys, T. L. Tansley, A. Barski

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

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Abstract

ZnO layers have been grown by atomic layer epitaxy using a gas flow version of the technique. ZnO films have been obtained from either a double exchange chemical reaction, a single exchange reaction, or from elemental components, i.e., from zinc and oxygen. We have also studied ZnO layers prepared by the oxidisation of ZnS layers. Silicon ((001) and (111)), GaAs, sapphire, sapphire/GaN or soda lime glass substrates have been used. We demonstrate that ZnO films are suitable as buffer layers for GaN epitaxy.

Original languageEnglish
Title of host publication2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
EditorsMichael Gal
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages13-16
Number of pages4
Volume2002-January
ISBN (Print)0780375718
DOIs
Publication statusPublished - 2002
EventConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Sydney, Australia
Duration: 11 Dec 200213 Dec 2002

Other

OtherConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
CountryAustralia
CitySydney
Period11/12/0213/12/02

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