TY - GEN
T1 - Atomic layer epitaxy of ZnO for substrates for GaN epitaxy
AU - Godlewski, M.
AU - Szczerbakow, A.
AU - Kopalko, K.
AU - Lusakowska, E.
AU - Butcher, K. S A
AU - Goldys, E. M.
AU - Tansley, T. L.
AU - Barski, A.
N1 - Copyright 2003 IEEE. Reprinted from Proceedings of the 2002 conference on optoelectronic and microelectronic materials and devices. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
PY - 2002
Y1 - 2002
N2 - ZnO layers have been grown by atomic layer epitaxy using a gas flow version of the technique. ZnO films have been obtained from either a double exchange chemical reaction, a single exchange reaction, or from elemental components, i.e., from zinc and oxygen. We have also studied ZnO layers prepared by the oxidisation of ZnS layers. Silicon ((001) and (111)), GaAs, sapphire, sapphire/GaN or soda lime glass substrates have been used. We demonstrate that ZnO films are suitable as buffer layers for GaN epitaxy.
AB - ZnO layers have been grown by atomic layer epitaxy using a gas flow version of the technique. ZnO films have been obtained from either a double exchange chemical reaction, a single exchange reaction, or from elemental components, i.e., from zinc and oxygen. We have also studied ZnO layers prepared by the oxidisation of ZnS layers. Silicon ((001) and (111)), GaAs, sapphire, sapphire/GaN or soda lime glass substrates have been used. We demonstrate that ZnO films are suitable as buffer layers for GaN epitaxy.
UR - http://www.scopus.com/inward/record.url?scp=84952656529&partnerID=8YFLogxK
U2 - 10.1109/COMMAD.2002.1237178
DO - 10.1109/COMMAD.2002.1237178
M3 - Conference proceeding contribution
AN - SCOPUS:84952656529
SN - 0780375718
VL - 2002-January
SP - 13
EP - 16
BT - 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
A2 - Gal, Michael
PB - Institute of Electrical and Electronics Engineers (IEEE)
CY - Piscataway, NJ
T2 - Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
Y2 - 11 December 2002 through 13 December 2002
ER -