Abstract
ZnO layers have been grown by atomic layer epitaxy using a gas flow version of the technique. ZnO films have been obtained from either a double exchange chemical reaction, a single exchange reaction, or from elemental components, i.e., from zinc and oxygen. We have also studied ZnO layers prepared by the oxidisation of ZnS layers. Silicon ((001) and (111)), GaAs, sapphire, sapphire/GaN or soda lime glass substrates have been used. We demonstrate that ZnO films are suitable as buffer layers for GaN epitaxy.
Original language | English |
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Title of host publication | 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings |
Editors | Michael Gal |
Place of Publication | Piscataway, NJ |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 13-16 |
Number of pages | 4 |
Volume | 2002-January |
ISBN (Print) | 0780375718 |
DOIs | |
Publication status | Published - 2002 |
Event | Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Sydney, Australia Duration: 11 Dec 2002 → 13 Dec 2002 |
Other
Other | Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 |
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Country | Australia |
City | Sydney |
Period | 11/12/02 → 13/12/02 |