Atomic layer epitaxy of ZnO for substrates for GaN epitaxy

M. Godlewski, A. Szczerbakow, K. Kopalko, E. Lusakowska, K. S A Butcher, E. M. Goldys, T. L. Tansley, A. Barski

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    Abstract

    ZnO layers have been grown by atomic layer epitaxy using a gas flow version of the technique. ZnO films have been obtained from either a double exchange chemical reaction, a single exchange reaction, or from elemental components, i.e., from zinc and oxygen. We have also studied ZnO layers prepared by the oxidisation of ZnS layers. Silicon ((001) and (111)), GaAs, sapphire, sapphire/GaN or soda lime glass substrates have been used. We demonstrate that ZnO films are suitable as buffer layers for GaN epitaxy.

    Original languageEnglish
    Title of host publication2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
    EditorsMichael Gal
    Place of PublicationPiscataway, NJ
    PublisherInstitute of Electrical and Electronics Engineers (IEEE)
    Pages13-16
    Number of pages4
    Volume2002-January
    ISBN (Print)0780375718
    DOIs
    Publication statusPublished - 2002
    EventConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Sydney, Australia
    Duration: 11 Dec 200213 Dec 2002

    Other

    OtherConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
    Country/TerritoryAustralia
    CitySydney
    Period11/12/0213/12/02

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